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All Journal Seminar Nasional Aplikasi Teknologi Informasi (SNATI) JURNAL SAINS DAN TEKNOLOGI INDONESIA TELKOMNIKA (Telecommunication Computing Electronics and Control) Bulletin of Electrical Engineering and Informatics Journal of Engineering and Technological Sciences Jurnal Elektronika dan Telekomunikasi JURNAL Al-AZHAR INDONESIA SERI SAINS DAN TEKNOLOGI Aviation Electronics, Information Technology, Telecommunications, Electricals, Controls (AVITEC) Prosiding Seminar Nasional Pemberdayaan Masyarakat (SENDAMAS)
Ary Syahriar
Department Of Electrical Engineering Faculty Of Science And Technology University Al Azhar Indonesia
Aerospace Engineering Humanities Biochemistry, Genetics & Molecular Biology Computer Science & IT Education Electrical & Electronics Engineering Engineering Environmental Science Industrial & Manufacturing Engineering Languange, Linguistic, Communication & Media Law, Crime, Criminology & Criminal Justice Public Health

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Journal : TELKOMNIKA (Telecommunication Computing Electronics and Control)

 1 
Overdriven Characteristics of Silica Switching Devices Ary Syahriar; Nabil Rayhan Syahriar; Jusman Syafiie Djamal
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 15, No 4: December 2017
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v15i4.6457

Abstract

We have built and characterized silica on silicon switching devices fabricated by using the electron beam irradiation. It is based on Mach-Zehnder structure fabricated on silica on silicon layers where the upper cladding used the MgF2 layers to bury the core. The switching speed of 2.0 s has been achieved. To further increase the switching speed we have used larger voltage to the Ti heating electrode to increase the thermo optics effects on silica structures. The higher driving voltage have been used that falls to zero exactly as the first extinction is reached, therefore three fold increase in modulation speed is achieved.
Cladding effects on silica directional couplers Ary Syahriar; Ahmad Husin Lubis; Jusman Syafii Jamal; Anwar Mujadin; Ahmad Juang Pratama
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 17, No 3: June 2019
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v17i3.8705

Abstract

Directional couplers are widely used as passive and active optical devices in fibre and integrated optics, and form the basis of components such as switches, modulators and wavelength filters. They consist of two closely-spaced parallel waveguides, whose separation is sufficiently small that power may be transferred between the modes propagating in the two guides through an interaction involving their evanescent fields. In this paper results are presented for a range of near infrared single mode silica directional couplers fabricated by electron beam irradiation. The effects of over cladding layers will be highlighted. Changes on coupling coefficient due to different cladding refractive indexes will also be examined. The coupled mode theory will be employed to fit the experimental results with prediction by theory. It is found that over cladding layer alters the transmission characteristics of silica directional couplers.
Comparison of semiconductor lasers at wavelength 980 nm & 1480 nm using InGaAs for EDFA pumping scheme Satyo Pradana; Ary Syahriar; Sasono Rahardjo; Ahmad H. Lubis
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 17, No 5: October 2019
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v17i5.11745

Abstract

Long distance Optical Communications are affected by many problems; loss of signal is one of them. Erbium Doped Fiber Amplifier (EDFA) is the key to solve it. By using Semiconductor Laser as pumping source for EDFA, the signal can brought back the performed of EDFA into normal condition. EDFA has a good wavelength operation at 980nm & 1480nm, in that case Semiconductor Laser using InGaAs at 980nm & 1480nm is suitable for them. By using selected wavelength and materials, the Semiconductor Laser can be produced properly. Also, determining the parameter is the important things to construct the Laser. By using Rate Equation, the performed of Semiconductor Laser can obtained several result. Those are injection current as a function of voltage, carrier density, photon density and output power as a function of injection current.
Modelling Optical Waveguide Bends by the Method of Lines Ary Syahriar; Nabil Rayhan Syahriar; Jusman Syafiie Djamal
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 16, No 4: August 2018
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v16i4.5191

Abstract

A rigorous analytical and semi analytical method of lines has been used to calculate the transverse-electric field attenuation coefficient of guided mode as it travels in waveguide bends structure. Both approaches then were compared to get a better understanding on how the attenuation behaves along single curve waveguides with constant radius of curvature. The Helmholtz Equation in polar coordinate was transformed into a curvalinier coordinate to simulate the waveguide bends using the method of line analysis. The simple absorption boundary conditions are used into the method of lines to demonstrate evanescent field of the guided mode nature as its travels in waveguide bends structures. The results show that a reasonable agreement between both theoretical approaches.
Co-Authors Ahmad H. Lubis Ahmad Husin Lubis Ahmad Juang Pratama Amri Heryana Anwar Mujadin Ary Mayola Augusta, Fahmi Adam Danny M. Gandana Dwi Astharini Helmi Adam Jusman Syafii Jamal Jusman Syafiie Djamal Jusman Syafiie Djamal Lubis, Ahmad Husin Mayola, Ary Mujadin, Anwar Nabil Rayhan Syahriar Nabil Rayhan Syahriar Nasrulloh Nasrulloh Putri Wulandari Putri Wulandari Rahmat Alamtaha Rahmatia, Suci Retno Wigajatri Rizki Noor Prasetyono Rizky Qinthara Syahriar Samijayani, Octarina Nur Sasono Rahardjo Satyo Pradana Shalsa Putra, Adhytya Dhava Zulkifli Alamtaha