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All Journal Bulletin of Electrical Engineering and Informatics Indonesian Journal of Electrical Engineering and Computer Science
Tamana Baba
International Islamic University Malaysia
Electrical & Electronics Engineering

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A review on techniques and modelling methodologies used for checking electromagnetic interference in integrated circuits Tamana Baba; Nurul Arfah Che Mustapha; Nurul Fadzlin Hasbullah
Indonesian Journal of Electrical Engineering and Computer Science Vol 25, No 2: February 2022
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v25.i2.pp796-804

Abstract

The proper function of the integrated circuit (IC) in an inhibiting electromagnetic environment has always been a serious concern throughout the decades of revolution in the world of electronics, from disjunct devices to today’s integrated circuit technology, where billions of transistors are combined on a single chip. The automotive industry and smart vehicles in particular, are confronting design issues such as being prone to electromagnetic interference (EMI). Electronic control devices calculate incorrect outputs because of EMI and sensors give misleading values which can prove fatal in case of automotives. In this paper, the authors have non exhaustively tried to review research work concerned with the investigation of EMI in ICs and prediction of this EMI using various modelling methodologies and measurement setups.
Effect of proton radiation on gallium nitride light emitting diodes Tamana Baba; Muhammad Hazeeq Husni; Norazlina Saidin; Nurul Fadzlin Hasbullah
Bulletin of Electrical Engineering and Informatics Vol 13, No 1: February 2024
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/eei.v13i1.6205

Abstract

The compound semiconductor gallium nitride offers enormous potential for facilitating economic expansion in the silicon-based semiconductor industry, which is currently seeing decreasing performance returns compared to investment costs. Its high electron mobility and electric field strength at the material level have already demonstrated enormous potential for photonics and high-frequency communications applications. However, its application in devices used in the radiation-prone environment is hindered by degradation and failure caused by the radiation. In this paper, the effect of proton radiation on the electrical properties of InGaN light emitting diodes (LEDs) for the fluence range of 1×1014 cm-2 to 3×1014 cm-2 is performed. On comparing the results before and after radiation, it is found that radiation mainly affected the reverse IV characteristics of the device with little or no effect on forward IV or CV characteristics. Apart from the electric properties, the optical properties of the LEDs show improvement after radiation as the light intensity increases post-irradiation.
Co-Authors Muhammad Hazeeq Husni Norazlina Saidin Nurul Arfah Che Mustapha Nurul Fadzlin Hasbullah