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Novel technique for hill climbing search to reach maximum power point tracking Ahmed Samir Badawi; Nurul Fadzlin Hasbullah; Siti Hajar Yusoff; Aisha H Hashim; Alhareth Zyoud
International Journal of Power Electronics and Drive Systems (IJPEDS) Vol 11, No 4: December 2020
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijpeds.v11.i4.pp2019-2029

In this paper, a new technique has been proposed to solve the trade off common problem in hill climbing search algorithm (HCS) to reach maximum power point tracking (MPPT). The main aim of the new technique is to increase the power efficiency for the wind energy conversion system (WECS). The proposed technique has been combined the three-mode algorithm to be simpler. The novel algorithm is increasing the ability to reach the MPPT without delay. The novel algorithm shows fast tracking capability and enhanced stability under change wind speed conditions.

Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation M. Azim Khairi; Rosminazuin Ab. Rahim; Norazlina Saidin; Yusof Abdullah; Nurul Fadzlin Hasbullah
Bulletin of Electrical Engineering and Informatics Vol 8, No 2: June 2019
Publisher : Institute of Advanced Engineering and Science

This paper investigates on the reaction of 10 and 15MGy, 3MeV electron irradiation upon off-the-shelves (commercial) Silicon Carbide Schottky diodes from Infineon Technologies (model: IDH08SG60C) and STMicroelectronics (model: STPSC806). Such irradiation reduces the forward-bias current. The reduction is mainly due to the significant increase of the series resistance (i.e. Infineon: 1.45Ω at before irradiation → 121×103 Ω at 15MGy); STMicroelectronics: 1.44Ω at before irradiation → 2.1×109 Ω at 15MGy). This increase in series resistance gives 4.6 and 8.2 orders of magnitude reduction for the forward-bias current density of Infineon and STMicroelectronics respectively. It is also observed that the ideality factor and the saturation current of the diodes increases with increasing dose (i.e. ideality factor- Infineon: 1.01 at before irradiation → 1.05 at 15MGy; STMicroelectronics: 1.02 at before irradiation → 1.3 at 15MGy | saturation current- Infineon: 1.6×10-17A at before irradiation → 2.5×10-17A at 15MGy; STMicroelectronics: 2.4×10-15A at before irradiation → 8×10-15A at 15MGy). Reverse-bias leakage current density in model by Infineon increases by one order of magnitude after 15MGy irradiation, however, in model by STMicroelectronics decreases by one order of magnitude. Overall, for these particular samples studied, Infineon devices have shown to be better in quality and more radiation resistance toward electron irradiation in forward-bias operation while STMicroelectronics exhibit better characteristics in reverse-bias operation.

Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation M. Azim Khairi; Rosminazuin Ab. Rahim; Norazlina Saidin; Yusof Abdullah; Nurul Fadzlin Hasbullah
Bulletin of Electrical Engineering and Informatics Vol 8, No 2: June 2019
Publisher : Institute of Advanced Engineering and Science

This paper investigates on the reaction of 10 and 15MGy, 3MeV electron irradiation upon off-the-shelves (commercial) Silicon Carbide Schottky diodes from Infineon Technologies (model: IDH08SG60C) and STMicroelectronics (model: STPSC806). Such irradiation reduces the forward-bias current. The reduction is mainly due to the significant increase of the series resistance (i.e. Infineon: 1.45Ω at before irradiation → 121×103 Ω at 15MGy); STMicroelectronics: 1.44Ω at before irradiation → 2.1×109 Ω at 15MGy). This increase in series resistance gives 4.6 and 8.2 orders of magnitude reduction for the forward-bias current density of Infineon and STMicroelectronics respectively. It is also observed that the ideality factor and the saturation current of the diodes increases with increasing dose (i.e. ideality factor- Infineon: 1.01 at before irradiation → 1.05 at 15MGy; STMicroelectronics: 1.02 at before irradiation → 1.3 at 15MGy | saturation current- Infineon: 1.6×10-17A at before irradiation → 2.5×10-17A at 15MGy; STMicroelectronics: 2.4×10-15A at before irradiation → 8×10-15A at 15MGy). Reverse-bias leakage current density in model by Infineon increases by one order of magnitude after 15MGy irradiation, however, in model by STMicroelectronics decreases by one order of magnitude. Overall, for these particular samples studied, Infineon devices have shown to be better in quality and more radiation resistance toward electron irradiation in forward-bias operation while STMicroelectronics exhibit better characteristics in reverse-bias operation.

Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation M. Azim Khairi; Rosminazuin Ab. Rahim; Norazlina Saidin; Yusof Abdullah; Nurul Fadzlin Hasbullah
Bulletin of Electrical Engineering and Informatics Vol 8, No 2: June 2019
Publisher : Institute of Advanced Engineering and Science

This paper investigates on the reaction of 10 and 15MGy, 3MeV electron irradiation upon off-the-shelves (commercial) Silicon Carbide Schottky diodes from Infineon Technologies (model: IDH08SG60C) and STMicroelectronics (model: STPSC806). Such irradiation reduces the forward-bias current. The reduction is mainly due to the significant increase of the series resistance (i.e. Infineon: 1.45Ω at before irradiation → 121×103 Ω at 15MGy); STMicroelectronics: 1.44Ω at before irradiation → 2.1×109 Ω at 15MGy). This increase in series resistance gives 4.6 and 8.2 orders of magnitude reduction for the forward-bias current density of Infineon and STMicroelectronics respectively. It is also observed that the ideality factor and the saturation current of the diodes increases with increasing dose (i.e. ideality factor- Infineon: 1.01 at before irradiation → 1.05 at 15MGy; STMicroelectronics: 1.02 at before irradiation → 1.3 at 15MGy | saturation current- Infineon: 1.6×10-17A at before irradiation → 2.5×10-17A at 15MGy; STMicroelectronics: 2.4×10-15A at before irradiation → 8×10-15A at 15MGy). Reverse-bias leakage current density in model by Infineon increases by one order of magnitude after 15MGy irradiation, however, in model by STMicroelectronics decreases by one order of magnitude. Overall, for these particular samples studied, Infineon devices have shown to be better in quality and more radiation resistance toward electron irradiation in forward-bias operation while STMicroelectronics exhibit better characteristics in reverse-bias operation.

A review on techniques and modelling methodologies used for checking electromagnetic interference in integrated circuits Tamana Baba; Nurul Arfah Che Mustapha; Nurul Fadzlin Hasbullah
Indonesian Journal of Electrical Engineering and Computer Science Vol 25, No 2: February 2022
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v25.i2.pp796-804

The proper function of the integrated circuit (IC) in an inhibiting electromagnetic environment has always been a serious concern throughout the decades of revolution in the world of electronics, from disjunct devices to today’s integrated circuit technology, where billions of transistors are combined on a single chip. The automotive industry and smart vehicles in particular, are confronting design issues such as being prone to electromagnetic interference (EMI). Electronic control devices calculate incorrect outputs because of EMI and sensors give misleading values which can prove fatal in case of automotives. In this paper, the authors have non exhaustively tried to review research work concerned with the investigation of EMI in ICs and prediction of this EMI using various modelling methodologies and measurement setups.

Electrical Characterization of Commercial Power MOSFET Under Electron Radiation Wan Nurhasana binti Wan Ayub; Nurul Fadzlin Hasbullah; Abdul Wafi Rashid
Indonesian Journal of Electrical Engineering and Computer Science Vol 8, No 2: November 2017
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v8.i2.pp462-466

This paper presents the threshold voltage shifts for both p-channel and n-channel commercial power MOSFET before and after electron irradiation. The experiment was done under the 3MeV energy of electron with dose level varies from 50KGy until 250KGy. The results were plotted and analyzed in terms of the shifted voltage characteristics. It is observed that after irradiation, both p-channel and n-channel MOSFET experiences negative threshold voltage shifts. For n-channel devices, this is due to the radiation-induced positive charges dominated in the oxide traps while for p-channel devices it is believed due to radiation-induced ionization damage.

Intelligent read-out circuit for space radiation detection 'Umar Abdul Aziz; Siti Fauziah Toha; Rabiatuladawiah Abu Hanifah; Nurul Fadzlin Hasbullah
Indonesian Journal of Electrical Engineering and Computer Science Vol 22, No 3: June 2021
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v22.i3.pp1411-1418

In the design of the satellite system, space radiation is among the important factors that need to be taken care of as it may contribute to system failure. This research aims to design and implement an intelligent read-out circuit to detect the level of radiation. It has the capability to measure the level of radiation. The capability of the designed device to measure the level of radiation and also the type of radiation exposure are the key components to be considered in the design of the system. In this research, the intelligent read-out circuit has been successfully designed and tested to detect the level of radiation. The results show the capability of the system to measure the level of radiation and determine the status of radiation level using both visual and sound indicators. The designed system is able to determine the level of radiation in a short time and strengthen by the danger-alert mechanism present in the system.

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