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Abdul Wafi Rashid
International Islamic University Malaysia

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Electrical Characterization of Commercial Power MOSFET Under Electron Radiation Wan Nurhasana binti Wan Ayub; Nurul Fadzlin Hasbullah; Abdul Wafi Rashid
Indonesian Journal of Electrical Engineering and Computer Science Vol 8, No 2: November 2017
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v8.i2.pp462-466

Abstract

This paper presents the threshold voltage shifts for both p-channel and n-channel commercial power MOSFET before and after electron irradiation. The experiment was done under the 3MeV energy of electron with dose level varies from 50KGy until 250KGy. The results were plotted and analyzed in terms of the shifted voltage characteristics. It is observed that after irradiation, both p-channel and n-channel MOSFET experiences negative threshold voltage shifts. For n-channel devices, this is due to the radiation-induced positive charges dominated in the oxide traps while for p-channel devices it is believed due to radiation-induced ionization damage.
Co-Authors Nurul Fadzlin Hasbullah Wan Nurhasana binti Wan Ayub