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Maizan Muhamad
Universiti Teknologi MARA

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Design of 130nm RFCMOS differential low noise amplifier Maizan Muhamad; Hanim Hussin; Norhayati Soin
Indonesian Journal of Electrical Engineering and Computer Science Vol 19, No 1: July 2020
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v19.i1.pp172-177

Abstract

In this paper, an inductively degenerated CMOS differential low noise amplifier circuit topology is presented. This low noise amplifier is intended to be used for wireless LAN application. The differential low noise amplifier proposed provide high gain, low noise and large superior out of band IIP3. The LNA is designed in 130 nm CMOS technology. Simulated results of gain and NF at 2.4GHz are 20.46 dB and 2.59 dB, respectively. While the simulated S11 and S22 are −11.18 dB and −9.49 dB, respectively. The IIP3 is −9.05 dBm. The LNA consumes 3.4 mW power from 1.2V supply. 
Design of Low Power Low Noise Amplifier using Gm-boosted Technique Maizan Muhamad; Norhayati Soin; Harikrishnan Ramiah
Indonesian Journal of Electrical Engineering and Computer Science Vol 9, No 3: March 2018
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v9.i3.pp685-689

Abstract

This paper presents the development of low noise amplifier integrated circuit using 130nm RFCMOS technology. The low noise amplifier function is to amplify extremely low noise amplifier without adding noise and preserving required signal to a noise ratio. A detailed methodology and analysis that leads to a low power LNA are being discussed throughout this paper. Inductively degenerated and Gm-boosted topology are used to design the circuit. Design specifications are focused for 802.11b/g/n IEEE Wireless LAN Standards with center frequency of 2.4 GHz. The best low noise amplifier provides a power gain (S21) of 19.841 dB with noise figure (NF) of 1.497 dB using the gm-boosted topology while the best low power amplifier drawing 4.19mW power from a 1.2V voltage supply using the inductively degenerated.
Co-Authors Hanim Hussin Harikrishnan Ramiah Norhayati Soin Norhayati Soin