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Norhayati Soin
University of Malaya

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Linearity improvement of differential CMOS low noise amplifier Maizan Muhamad; Norhayati Soin; Harikrishnan Ramiah
Indonesian Journal of Electrical Engineering and Computer Science Vol 14, No 1: April 2019
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v14.i1.pp407-412

Abstract

This paper presents the linearity improvement of differential CMOS low noise amplifier integrated circuit using 0.13um CMOS technology. In this study, inductively degenerated common source topology is adopted for wireless LAN application. The linearity of the single-ended LNA was improved by using differential structures with optimum biasing technique. This technique achieved better LNA and linearity performance compare with single-ended structure. Simulation was made by using the cadence spectre RF tool. Consuming 5.8mA current at 1.2V supply voltage, the designed LNA exhibits S21 gain of 18.56 dB, noise figure (NF) of 1.85 dB, S11 of −27.63 dB, S22 of -34.33 dB, S12 of −37.09 dB and IIP3 of -7.79 dBm.
Optimization of KOH etching process for MEMS square diaphragm using response surface method Norliana Yusof; Badariah Bais; Burhanuddin Yeop Majlis; Norhayati Soin; Jumril Yunas
Indonesian Journal of Electrical Engineering and Computer Science Vol 15, No 1: July 2019
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v15.i1.pp113-121

Abstract

KOH wet etching is widely used in realizing MEMS diaphragm due to its low cost, safe and easy handling. However, wet etching process parameters need to be studied thoroughly in order to realize the desired shape and size of MEMS devices. This paper presents the numerical study and optimization of KOH etching process parameters using the response surface method (RSM). Face central composite design (FCC) of RSM was employed as the experimental design to analyze the result and generate a mathematical prediction model. From the analysis, the temperature was identified as the most significant process parameter that affects the etching rate, thus affecting the thickness and size of the diaphragm. The results of RSM prediction for optimization were applied in this study. Particularly, 45% of KOH concentration, temperature of 80°C, 1735 µm2 of mask size, and 7.2 hours of etching time were implemented to obtain a square MEMS diaphragm with thickness of 120 µm and size of 1200 µm2. The results of RSM based optimization method for KOH wet etching offers a quick and effective method for realizing a desired MEMS device.
Design of Low Power Low Noise Amplifier using Gm-boosted Technique Maizan Muhamad; Norhayati Soin; Harikrishnan Ramiah
Indonesian Journal of Electrical Engineering and Computer Science Vol 9, No 3: March 2018
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v9.i3.pp685-689

Abstract

This paper presents the development of low noise amplifier integrated circuit using 130nm RFCMOS technology. The low noise amplifier function is to amplify extremely low noise amplifier without adding noise and preserving required signal to a noise ratio. A detailed methodology and analysis that leads to a low power LNA are being discussed throughout this paper. Inductively degenerated and Gm-boosted topology are used to design the circuit. Design specifications are focused for 802.11b/g/n IEEE Wireless LAN Standards with center frequency of 2.4 GHz. The best low noise amplifier provides a power gain (S21) of 19.841 dB with noise figure (NF) of 1.497 dB using the gm-boosted topology while the best low power amplifier drawing 4.19mW power from a 1.2V voltage supply using the inductively degenerated.
Co-Authors Badariah Bais Burhanuddin Yeop Majlis Harikrishnan Ramiah Jumril Yunas Maizan Muhamad Maizan Muhamad Norliana Yusof