Article Per Year (5 Year)
p-Index From 2021 - 2026
0
P-Index
This Author published in this journals
All Journal Indonesian Journal of Electrical Engineering and Computer Science
Song Bai
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

Published : 1 Documents Claim Missing Document
Claim Missing Document
Check
Articles

Found 1 Documents
Search

 1 
Study of Small Signal of 4H-SiC Static Induction Transistor Gang Chen; Yang Lu; Li Li; Song Bai; Yun Li; Haiyan Lu
Indonesian Journal of Electrical Engineering and Computer Science Vol 11, No 5: May 2013
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

Silicon carbide (SiC) SITs were fabricated using home-grown epi structures. The gate is a recessed gate - bottom contact (RG - B). We designed that the mesa space 2.5 μm and the gate channel is 1.5 μm. One cell has 400 source fingers and each source finger width is 50 μm. 0.5 mm gate periphery SiC SIT yielded a maximum drain current density of 160 mA/mm at a drain voltage of 80 V and a gate voltage of 2.5 V. The device blocking voltage with a gate bias of -16 V was 400 V. Packaged 0.5-mm devices were evaluated using amplifier circuits designed for class AB operations. Small signal of SIT was studied. the maximum stable gain (MSG) were 11.2 dB at 500MHz and 7.85 dB at L band 1 GHz with Vds = 80V and Vg = 2V. DOI: http://dx.doi.org/10.11591/telkomnika.v11i5.2559
Co-Authors Gang Chen Haiyan Lu Li Li Yang Lu Yun Li