Article Per Year (5 Year)
p-Index From 2020 - 2025
0
P-Index
This Author published in this journals
All Journal Indonesian Journal of Electrical Engineering and Computer Science
Rudy S Wahjudi
Trisakti University

Published : 1 Documents Claim Missing Document
Claim Missing Document
Check
Articles

Found 1 Documents
Search

 1 
Scaling Model for Silicon Germanium Heterojunction Bipolar Transistor Engelin Shintadewi Julian; Rudy S Wahjudi
Indonesian Journal of Electrical Engineering and Computer Science Vol 14, No 1: April 2015
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

In the past half-century, scaling has been used to improve semiconductor devices performance. In this paper, we study the effects of scaling on SiGe(C) heterojunction bipolar transistors (HBTs) performances i.e. cutoff frequency (fT), maximum frequency of oscillation (fmax) and gate delay (τg). The SiGe HBT scaling models are developed from more than twenty years accumulated reported data. The results show that the peak cutoff frequency shows an increasing trend with emitter width scaling with a factor of ~WE-0.719, the peak maximum frequency of oscillation shows an increasing trend with emitter width scaling with a factor of ~WE-0.723 and the gate delay shows a decreasing trend with emitter width scaling with a factor of ~WE0.778. DOI: http://dx.doi.org/10.11591/telkomnika.v14i1.7469 
Co-Authors Engelin Shintadewi Julian