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Experimental Study of an Aluminum-Polysilicon Thermopile for Implementation of Airflow Sensor on Silicon Chip Subandi, Ayub; Idris, Irman; Ahmad, Adang Suwandi
Journal of Engineering and Technological Sciences Vol 39, No 2 (2007)
Publisher : ITB Journal Publisher, LPPM ITB

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (169.272 KB) | DOI: 10.5614/itbj.eng.sci.2007.39.2.2

Abstract

A multi-directional airflow sensor has been realized. The essential part of  the  considered  sensor  is  a  thermopile  configuration,  which  enables  the measurement  of  flow  speed  and  flow  direction.  The  thermopile  is  a  series arrangement  of  eight  thermocouples.  A  thermocouple  converts  a  difference  in temperature  into  an  electrical  signal,  by  means  of  the  Seebeck  effect .  The thermocouples  are  made  of  aluminum-N-type  polysilicon  junctions.  The incoming  flow  is  heated  and  the  degree  of  heat  transfer  by  convection  to  the flow, depends on the speed of the flow; the faster the flow the smaller the heat transfer,  which leads to a smaller (Seebeck) output  voltage of  the thermopiles. After  signal  conditioning  -  i.e.,  filtering  and  amplification  by  means  of  an amplification system  -  the electrical output signals of the thermopiles are further signal-processed by applying analog-to-digital signal conversion, so that finally the flow speed and the flow direction can be properly displayed on a computer screen. The measured values of the Seebeck coefficient or thermopower (S) were in the range of: 0.43 to 0.68 mV/K which are in good agreement with the values found in the literature: 0.5 to 0.7 mV/K. Moreover, it  was found that the  flow speed  U is  proportional  to  the  reciprocal  value  of  the  square  of  the  output voltage of the outgoing thermopile.
Implanted Layer Characterization Adharul Muttaqin; Irman Idris
Jurnal EECCIS (Electrics, Electronics, Communications, Controls, Informatics, Systems) Vol. 1 No. 1 (2007)
Publisher : Fakultas Teknik, Universitas Brawijaya

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (304.007 KB) | DOI: 10.21776/jeeccis.v1i1.351

Abstract

In modern semiconductor process technology, ion implantation has become the most important technique to introduce dopant atoms into semiconductor materials. The main advantage of ion implantation technique is its high controllability of process parameters, which influencing dopant distribution profile. This research was intended to characterize the product of ion implantation machine NV-3204.Ion implantation characterization successfully produced and evaluated pn-junction diode characteristics. PN-junction diode was fabricated using 100 keV energy and 5x1013 cm-3 dose of phosphorus on a silicon wafer type N<111>. For all measured area, pnjunction diode has junction depth Xj = 1 um, breakdown voltage -45V, built-in voltage 0.8V, and dopant concentration 5x1018 cm-3. Comparing the simulation, this result exhibited that output of ion implantation machine was well controlled.
Experimental Study of an Aluminum-Polysilicon Thermopile for Implementation of Airflow Sensor on Silicon Chip Ayub Subandi; Irman Idris; Adang Suwandi Ahmad
Journal of Engineering and Technological Sciences Vol. 39 No. 2 (2007)
Publisher : Institute for Research and Community Services, Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.5614/itbj.eng.sci.2007.39.2.2

Abstract

A multi-directional airflow sensor has been realized. The essential part of  the  considered  sensor  is  a  thermopile  configuration,  which  enables  the measurement  of  flow  speed  and  flow  direction.  The  thermopile  is  a  series arrangement  of  eight  thermocouples.  A  thermocouple  converts  a  difference  in temperature  into  an  electrical  signal,  by  means  of  the  Seebeck  effect .  The thermocouples  are  made  of  aluminum-N-type  polysilicon  junctions.  The incoming  flow  is  heated  and  the  degree  of  heat  transfer  by  convection  to  the flow, depends on the speed of the flow; the faster the flow the smaller the heat transfer,  which leads to a smaller (Seebeck) output  voltage of  the thermopiles. After  signal  conditioning  -  i.e.,  filtering  and  amplification  by  means  of  an amplification system  -  the electrical output signals of the thermopiles are further signal-processed by applying analog-to-digital signal conversion, so that finally the flow speed and the flow direction can be properly displayed on a computer screen. The measured values of the Seebeck coefficient or thermopower (S) were in the range of: 0.43 to 0.68 mV/K which are in good agreement with the values found in the literature: 0.5 to 0.7 mV/K. Moreover, it  was found that the  flow speed  Uï‚¥ is  proportional  to  the  reciprocal  value  of  the  square  of  the  output voltage of the outgoing thermopile.
DESIGN AND CHARACTERIZATION OF SPIN COATER TO SUPPORT NATIONAL SEMICONDUCTOR INDUSTRY Ardi Rahman; Okasatria Novyanto; Nurul Alfiyati; Ahmad Sidik; Irman Idris; Asep Ridwan Nugraha
JURNAL STANDARDISASI Vol 21, No 3 (2019)
Publisher : Badan Standardisasi Nasional

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.31153/js.v21i3.761

Abstract

Recently, semiconductor industry grows rapidly due to high demand of modern electronic system. In addition, the value of investments in Indonesia electronic industries also more than doubled during 2015-2017. This increase in investment will certainly have an impact on the increasing the needs for electronic / semiconductor component processing machines. To support it, well performed spin coater then were designed. The characterization of spin coating process was done at BSN (formerly was known as Research Center for Metrology LIPI) using roughness measuring instrument/ profilometer that traceable to PTB (Germany) to guarantee the validity of the measurement results. Characterization experiment used positive photoresist SPR3018 to see the performance of system designed. Three different experiments were performed to determine the impact of spin speed and spin time to photoresist thickness and uniformity. The characterization shown that on spin speed increased, the photoresist was deployed thinner. The thickness of the photoresist is inversely proportional to the square root of spin speed. Furthermore, the longer spin coating time, it increases the tendency of concave surface. This work is expected to benefit the practitioners of electronic systems, semiconductor industries, and even SNI conceptors.
Perancangan, Fabrikasi, dan Karakterisasi Transistor Bipolar: Perancangan, Fabrikasi, dan Karakterisasi Transistor Bipolar Subandi, Ayub; Idris, Irman
Komputika : Jurnal Sistem Komputer Vol. 14 No. 1 (2025): Komputika: Jurnal Sistem Komputer
Publisher : Computer Engineering Departement, Universitas Komputer Indonesia

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.34010/komputika.v14i1.15859

Abstract

Bipolar transistors still play an important and irreplaceable role in the application of electronic systems, even though almost all logic circuits, including microprocessors and memory, consist of MOS (Metal Oxide Semiconductor) transistors. They are widely used today due to their advantage higher switching speed compared to MOS technology and their ability to conduct high currents. In this research, the design, fabrication, and characterization of bipolar transistor were carried out. The design was done using L-Edit software and the converted to glass using a photoreduction camera. The base material for the transistors was n-type epitaxial wafer with a layer depth of 3 μm. The fabrication process involved wafer cleaning, oxidation, diffusion, photolithography, etching, metallization, and metal strengthening. Due to the use of a thin epitaxial wafer, thermal diffusion followed by a drive-in process was avoided to prevent penetration through the epitaxial layer, resulting in a low current gain (β) of only 1.5 times. On the other hand, using a thicker epitaxial layer would create difficulties during the isolation process. The success of each fabrication step was determined by measurement on test patterns, including resistor resistance measurement, diode characterization, and determination of diffusion depth using dummy samples. The measurement results showed an emitter junction depth of 0.3 μm, and a base layer width of 1.1 μm. These results indicate that the transistor was successfully fabrication, although with a low current gain. Keywords – MOS; Epitaxial wafer; Diffusion; Current amplifier; Dummy. 
FABRIKASI CHIP MASKED-READ ONLY MEMORY 112 BITS DENGAN TEKNOLOGI N-CHANNEL METAL OXIDE SEMICONDUCTOR (N-MOSFET) Subandi, Ayub; Idris, Irman
Komputika : Jurnal Sistem Komputer Vol. 2 No. 2 (2013): Komputika
Publisher : Computer Engineering Departement, Universitas Komputer Indonesia

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.34010/komputika.v2i2.5168

Abstract

Pada penelitian ini, dilakukan fabrikasi rangkaian terintegrasi (IC=Integrated Circuit) Masked-ROM 112 bits dengan teknologi NMOS (n-channel Metal Oxide Semiconductor) berikut gerbang-gerbang logika. Gerbang logika yang dipakai adalah inverter, AND, dan NOR. Proses-proses yang digunakan diantaranya pencucian wafer, fotolitografi, oksidasi, deposisi polisilikon, dan metalisasi Aluminium. Dari hasil pengukuran terhadap divais yang dibuat diperoleh threshold voltage positif. Karakterisasi gerbang logika secara umum telah tercapai. Akan tetapi masked-ROM yang difabrikasi masih tidak sesuai dengan yang diharapkan.
IoT-Based Plant Growth Chamber with YOLOv8 for Anthracnose Disease Severity Classification in Chili Pepper Sutoyo, Mochammad Rizky Abadi; Irman Idris; Gilang Mardian Kartiwa; Muhammad Adli Rizqulloh; Faisal Asadi
Andalas Journal of Electrical and Electronic Engineering Technology Vol. 5 No. 2 (2025): November 2025
Publisher : Electrical Engineering Dept, Engineering Faculty, Universitas Andalas

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.25077/ajeeet.v5i2.109

Abstract

Plant growth chambers provide controlled environments for agricultural research, enabling precise monitoring of crop diseases under optimal microclimate conditions. This paper presents an integrated IoT-based smart plant growth chamber system utilizing YOLOv8 machine learning for the automated classification of anthracnose disease severity in chili peppers (Capsicum annuum L.). The system integrates multiple subsystems, including environmental control, a robotic camera with 2-axis movement, a gateway for data communication, and remote monitoring capabilities through a cloud server and a web interface. Dataset labeling was performed using LabelImg and Roboflow, with data augmentation increasing training samples from 70% to 86%. Three YOLOv8 models were evaluated: YOLOv8L (150 epochs), YOLOv8N (100 epochs), and YOLOv8N (398 epochs). Based on our test so far, the YOLOv8L model achieved the best performance with mAP of 67.4% and successfully detected 44 out of 102 test samples (43% detection rate) across multiple disease severity scores (0-9). The system enables both onsite and remote access, automatic data logging, real-time image capture with PyQt5-based GUI, and environmental parameter control (temperature: 5-50°C, humidity: 40-90%RH, light: 0-15,000 lux), which can be manually set and automatically set based on the requirements of the user. This integrated approach demonstrates practical deployment of edge AI and IoT technologies for precision agriculture and disease monitoring applications.