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All Journal International Journal of Electrical and Computer Engineering Indonesian Journal of Electrical Engineering and Computer Science
Mohammed Ayad Saad
Universiti Kebangsaan Malaysia
Computer Science & IT Electrical & Electronics Engineering

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Analysis the efficiency of multi-input-multi-output (MIMO) transmit receive systems Ali Hlal Mutlaq; Mohammed Ayad Saad; Faris Hassan Tata; Ghanim Thiab Hasan
Indonesian Journal of Electrical Engineering and Computer Science Vol 29, No 1: January 2023
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v29.i1.pp190-196

Abstract

Transmit antennas are chosen in multi-input-multi-output (MIMO) systems. Effective in improving system capacity while lowering RF connection costs and simplifying the system. Complete method with greatest accuracy for joint transmits and receive antenna selection (JTRAS), capable of scanning all subsets of both transmitting and receiving antennas for the optimal solution. However, when as the number of antennas but also computational complexity increase grows too great, limiting its application. Antennas are coded fractionally channel capacity maximizing coding is used as a basic criterion in this paper, and an intelligent algorithm Particle swarm algorithm, generic algorithm are used to pick antennas. The simulation results show that both algorithms are capable of performing antenna selection.
Modeling of magnetic sensitivity of the metal-oxide-semiconductor field-effect transistor with double gates Ghanim Thiab Hasan; Ali Hlal Mutlaq; Kamil Jadu Ali; Mohammed Ayad Saad
International Journal of Electrical and Computer Engineering (IJECE) Vol 13, No 3: June 2023
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijece.v13i3.pp2632-2639

Abstract

In this paper, we investigated the effect of magnetic field on the carrier transport phenomenon in metal-oxide-semiconductor field-effect transistor (MOSFET) with double gates by examining the behavior of the semiconductor under the Lorentz force and a constant magnetic field. Various behaviors within the channel have been simulated including the potential distribution, conduction and valence bands, total current density, total charge density and the magnetic field. The results obtained indicate that this modulation affects the electrical characteristics of the device such as on-state current (ION), subthreshold leakage current (IOF), threshold voltage (VTh), and the Hall voltage (VH) is induced by the magnetic field. The change in threshold voltage caused by the magnetic field has been observed to affect the switching characteristics of the device, such as speed and power loss, as well as the threshold voltage VTh and (ION/IOF) ratio. Note that it is reduced by 10-3 V. 102 for magnetic fields of ±6 and ±5.5 tesla respectively.
Co-Authors Ali Hlal Mutlaq Faris Hassan Tata Ghanim Thiab Hasan Kamil Jadu Ali