Article Per Year (5 Year)
p-Index From 2021 - 2026
0
P-Index
This Author published in this journals
All Journal Indonesian Journal of Physics (IJP)
I. Hamidah
1) Lab. for Electronic Materials Physics, Dept. of Physics , Bandung Institut of Technology, Jl. Ganesa No. 10 Bandung 40132. 2) Lab. of Physics, Dept. of Mechanical Engineering, Indonesia University of Education, Jl. Setiabudhi No. 207, Bandung 4015
Astronomy Computer Science & IT Earth & Planetary Sciences Electrical & Electronics Engineering Energy Engineering

Published : 1 Documents Claim Missing Document
Claim Missing Document
Check
Articles

Found 1 Documents
Search

 1 
Study of Structural and Electrical Properties of Gallium Arsenide Thin Film Grown by MOCVD Using Trisdimethylamino Arsenic I. Hamidah; N. Yuningsih; P. Arifin; M. Budiman; M. Barmawi
Indonesian Journal of Physics Vol 15 No 2 (2004): Vol. 15 No.2, April 2004
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (385.943 KB)

Abstract

Trisdimethylamino Arsenic (TDMAAs) and trimethyl gallium (TMGa) have been successfully used as Arsenic (As) and gallium (Ga) precursors, respectively, for GaAs epitaxial layers growth by metal organic chemical vapor deposition (MOCVD) method. TDMAAs is used as As precursor due to its excellent properties, i.e. nontoxic, low carbon incorporation, low vapor pressure, and no need for precracking. The surface morphology of GaAs is observed by scanning electron microscopy (SEM) method and GaAs atomic fraction is measured by energy dispersive X-ray (EDX) method. From the examination of electrical properties by the standard Hall-van der Pauw measurement, it can be concluded that the film conductivity for all layers are p-type. GaAs with V/III ratio of 4.5 has a growth rate of 0.94 µm/h, mobility of 395 cm2/Vs and room temperature hole concentration of 3.44 x 1015 cm-3
Co-Authors M. Barmawi M. Budiman N. Yuningsih P. Arifin