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All Journal Indonesian Journal of Physics (IJP)
N. Yuningsih
Lab. of Physics, UP-MKU, Politeknik Negeri Bandung, Jl. Geger Kalong Hilir PO Box 6468 BDCD, Bandung 40162
Astronomy Computer Science & IT Earth & Planetary Sciences Electrical & Electronics Engineering Energy Engineering

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Study of Structural and Electrical Properties of Gallium Arsenide Thin Film Grown by MOCVD Using Trisdimethylamino Arsenic I. Hamidah; N. Yuningsih; P. Arifin; M. Budiman; M. Barmawi
Indonesian Journal of Physics Vol 15 No 2 (2004): Vol. 15 No.2, April 2004
Publisher : Institut Teknologi Bandung

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Abstract

Trisdimethylamino Arsenic (TDMAAs) and trimethyl gallium (TMGa) have been successfully used as Arsenic (As) and gallium (Ga) precursors, respectively, for GaAs epitaxial layers growth by metal organic chemical vapor deposition (MOCVD) method. TDMAAs is used as As precursor due to its excellent properties, i.e. nontoxic, low carbon incorporation, low vapor pressure, and no need for precracking. The surface morphology of GaAs is observed by scanning electron microscopy (SEM) method and GaAs atomic fraction is measured by energy dispersive X-ray (EDX) method. From the examination of electrical properties by the standard Hall-van der Pauw measurement, it can be concluded that the film conductivity for all layers are p-type. GaAs with V/III ratio of 4.5 has a growth rate of 0.94 µm/h, mobility of 395 cm2/Vs and room temperature hole concentration of 3.44 x 1015 cm-3
Gallium Arsenide Thin Films Grown by MOCVD With Various Growth Conditions I. Hamidah; N. Yuningsih; P. Arifin; M. Budiman; M. Barmawi
Indonesian Journal of Physics Vol 15 No 4 (2004): Vol. 15 No. 4, October 2004
Publisher : Institut Teknologi Bandung

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Abstract

GaAs films were usually grown by metal organic chemical vapor deposition (MOCVD) using AsH3 and trimethyl-gallium (TMGa) as precursors. In this study, trisdimethylamino-arsenic (TDMAAs) and TMGa had been successfully used as As and Ga precursor, respectively. For these experiments, the growth temperature was allowed to range from 580 to 600 oC, the total reactor pressure was varied from 50 to 70 torr, and the flows of hydrogen and nitrogen were varied from 200 to 400 sccm. The TDMAAs/TMGa ratio was kept at 4.5. The structural and electrical properties were characterized using SEM method and standard van-der Pauw Hall measurement, respectively. The best growth condition occurred at growth temperature of 580 oC, reactor pressure of 50 torr, H2/N2 ratio of 1,and V/III ratio of 4.5. This film had grain size of 1.08 µm, growth rate of 0.94 µm/h, 395 cm2/Vs mobility, and hole concentration of 3.44 x 1015 cm-3
Co-Authors I. Hamidah I. Hamidah M. Barmawi M. Barmawi M. Budiman M. Budiman P. Arifin P. Arifin