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Impacts of Eu2+ -doped K3LuSi2O7 phosphor and a scattering particle on conventional white light emitting diodes Duy, Le Doan; Thai, Nguyen Le; Cong, Pham Hong; Tran, Thinh Cong
Indonesian Journal of Electrical Engineering and Computer Science Vol 35, No 2: August 2024
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v35.i2.pp743-750

Abstract

The K3LuSi2O7 phosphor doping Eu2+ rare-earth ions (KLS:Eu) was reported to possess broad emission band from near-ultraviolet to nearinfrared. Additionally, this phosphor showed a wide absorption band of 250-600 nm, allowing it to be excited by blue-light chip of 460 nm, making it one of the suitable phosphor materials for a light emitting diode (LED). Besides, the scattering particle material CaCO3 is incorporated into the yellow phosphor layer to serve the scattering-enhancement purpose. The combination of both materials aims at accomplishing improvements in performance of commercial LED package. The concentration of KLS:Eu is constant while that of CaCO3 is modified. As a result, the scattering factor is regulated and become the key factor influencing the optical outputs of the simulated LED. The increasing CaCO3 concentration enhances the phosphor scattering efficiency of light, helping to improve the lumen output and color-temperature consistency of the LED. However, the color rendering performance declines as a function of the CaCO3 growing amount, despite the presence of a KLS:Eu phosphor layer. Further works should be done to optimize the application of KLS:Eu in cooperation with scattering particles for a higher-quality LED device.
Enhancement of Charge Transfer in Quantum Dot–sensitized Solar Cell Photoanodes by Supporting rGO Layers Phuc, Dang Huu; Tung, Ha Thanh; Duy, Le Doan; Nhan, Le Minh
Bulletin of Chemical Reaction Engineering & Catalysis 2025: BCREC Volume 20 Issue 4 Year 2025 (December 2025)
Publisher : Masyarakat Katalis Indonesia - Indonesian Catalyst Society (MKICS)

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.9767/bcrec.20366

Abstract

In this study, we have studied and fabricated quantum dot sensitized solar cells based on photoanodes with the support of rGO buffer layer to enhance the electron transfer ability from TiO2 nano-semiconductor to FTO substrate. The rGO materials were fabricated by hydrothermal method, then they were coated on FTO substrate by Screen - Printing technique to create rGO nano films. The thickness of rGO films was studied from 1 to 3 layers to evaluate the mobility of charge, reduce recombination and resistance of film. Experimental results were determined by structural properties using XRD, FTIR, EDX and XPS, FESEM spectra; determined optical properties using UV-Vis absorption and transmission spectra; determined optical, electrical and chemical properties using Nyquist and EIS spectra. The maximum measured efficiency was 5.23% for the FTO/rGO(2)/TiO2/QDs film, current density 21.34 mA/cm2, open circuit voltage 5.525V and fill factor of 0.34. These results were also proven through the research results of optical properties, electrochemical properties. In addition, these results are also consistent with the studies of others. Copyright © 2025 by Authors, Published by BCREC Publishing Group. This is an open access article under the CC BY-SA License (https://creativecommons.org/licenses/by-sa/4.0).