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Purnomo, M Zalu
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Chemical Engineering, Chemistry & Bioengineering Electrical & Electronics Engineering Industrial & Manufacturing Engineering Materials Science & Nanotechnology Mechanical Engineering

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Study on the Structure of GaN films deposited on MoS2/Sapphire via Plasma-Assisted Molecular Beam Epitaxy Susanto, Iwan; Tsai, Chi-Yu; Nurzal, Nurzal; Purnomo, M Zalu; Ing-Song Yu
Recent in Engineering Science and Technology Vol. 1 No. 02 (2023): RiESTech Volume 01 No. 02 Years 2023
Publisher : MBI

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.59511/riestech.v1i02.14

Abstract

The gallium nitride (GaN) films were grown on molybdenum disulfide (MoS2) layers via plasma-assisted molecular beam epitaxy (PA-MBE). The heterostructures of the GaN film were studied using reflection high-energy electron diffraction (RHEED) and HR-XRD. The heterostructures of GaN/MoS2/sapphire were revealed through cross-sectional transmission electron microscopy (TEM). The surface texture of the GaN films was analyzed using FE-SEM. Single-crystal heterostructure GaN films can be obtained on 2D MoS2/c-sapphire. The RHEED demonstrated spot patterns with high intensity showing the single crystal structure constructed in the GaN films. The GaN films on the surface exhibited a hexagonal structure. TEM images taken perpendicular to the surface revealed that, even after 60 minutes of epitaxial growth, the thickness of the GaN films remained consistent at approximately 4 nm. However, the 2D MoS2 layer was not observable in the images due to harm incurred during heteroepitaxial growth. Based on the surface structure, it was found that GaN films were successfully grown on the MoS2 layers using the PA-MBE system.
Pengembangan Penyapu Magnet Otomatis Menggunakan Sistem IoT Susanto, Iwan; Tsai , Chi-Yu; Nurzal , Nurzal; Purnomo, M Zalu; Yu, Ing-Song
Recent in Engineering Science and Technology Vol. 2 No. 01 (2024): RiESTech Volume 02 No. 01 Years 2024
Publisher : MBI

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.59511/riestech.v2i01.44

Abstract

This study presents a comprehensive analysis of the epitaxial growth and surface characteristics of GaN films on 2D MoS2/c-sapphire substrates. Reflection High Energy Electron Diffraction (RHEED) patterns demonstrate the evolution of the substrate and GaN film surfaces during growth. The subsequent growth of GaN films results in the emergence of hexagonal spots, indicative of a single crystal structure. The brightness intensifies with longer growth times, confirming the improvement in GaN crystalline quality. Atomic Force Microscopy (AFM) images provide further insights into the surface texture. The 2D MoS2/c-sapphire substrate exhibits a textured surface, while GaN films display similar features with bright colors corresponding to GaN clusters. The Root Mean Square (RMS) surface roughness values of GaN films have a higher roughness compared to the substrate. Scanning Electron Microscopy (SEM) confirms the uniform coverage of GaN films, revealing smooth growth and organized hexagonal structures. These findings collectively demonstrate the successful epitaxial growth of GaN films on 2D MoS2/c-sapphire substrates, providing valuable insights into their surface morphology and crystalline structure.
Co-Authors Ing-Song Yu Iwan Susanto Nurzal, Nurzal Tsai , Chi-Yu Tsai, Chi-Yu Yu, Ing-Song