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Journal : International Journal of Renewable Energy Development

The implementation of ozone cleaning on two-step texturization of p-type silicon wafer Md Daud, Mohd Norizam; Aadenan, Amin; Chin Haw, Lim; Mohd Nor, Najah Syahirah; Ibrahim, Mohd Adib; Mat Teridi, Mohd Asri
International Journal of Renewable Energy Development Vol 14, No 2 (2025): March 2025
Publisher : Center of Biomass & Renewable Energy (CBIORE)

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.61435/ijred.2025.60805

Abstract

This study investigates the ozone treatment process that can be utilized across various fabrication stages to enhance the performance of silicon solar cells. The effectiveness of this treatment on p-type silicon surfaces was examined through the application of ozone dissolved in deionized water (DIO3) and the ultraviolet-ozone (UVO3) cleaning process prior to the two-step texturization procedure. The two-step texturization procedure applied in this work eliminates the use of silicon nitride (SiN) as an anti-reflective coating (ARC) layer for the elimination of toxic gases and leads to the environment-friendly fabrication of solar cells. An alternative to RCA, DIO3 and UVO3 represent promising chemical options for cleaning applications to eliminate the use of hazardous chemicals. It was discovered that the surface with the DIO3 treatment for 10 minutes resulted in a significantly enhanced surface quality on the p-type silicon wafer. In the DIO₃ cleaning, ozone is dissolved in deionized water  to create a highly oxidative solution capable of removing organic contaminants and particles effectively. In contrast, the UVO₃ treatment harnesses ultraviolet light to synthesize ozone directly on the wafer's surface, promoting the degradation of organic residues into volatile compounds, including CO₂ and H₂O. According to field emission scanning electron microscope (FESEM) micrographs and UV-visible spectrometer (UV-Vis) measurements, the textured wafer with DIO3 treatment improves the surface morphology and decreases the front surface reflection. As a result, the 10 minutes DIO3 treatments were reported optimal; the range size and height of the pyramid formed were 1.9–2.0 µm and 0.8–1.5 µm, offering a lower reflectivity value of below 12%, respectively. Results from the Atomic Force Microscope  (AFM) also confirm that the increase in average surface roughness from 203.65 nm to 300.27 nm was expected to improve light absorption. Moreover, this methodology leads to a considerable reduction in surface damage and is applicable to the silicon texturization process utilized in solar cell manufacturing.
Combined study to explore planar-mixed dimensional Cs3Bi2I9 solar cells Zulhafizhazuan, Wan; Bin Rafiq, Md Khan Sobayel; Shafian, Shafidah; Sepeai, Suhaila; Ibrahim, Mohd Adib
International Journal of Renewable Energy Development Vol 14, No 2 (2025): March 2025
Publisher : Center of Biomass & Renewable Energy (CBIORE)

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.61435/ijred.2025.60642

Abstract

The development of high-efficiency solar cells is of paramount importance for advancing sustainable energy technologies and meeting global energy demands. This study focuses on the optoelectronic performance of FTO/TiO2/Cs3Bi2I9/Spiro-OMeATAD/Ag planar heterojunction solar cells. Through detailed analysis, we investigated various factors such as crystallite size, strain, dislocation density, and their collective influence on the overall performance of the solar cells. Among the fabricated samples, sample A3 exhibited a significant improvement in efficiency, showing a 0.72% enhancement over the others. This increase is attributed to A3's superior crystallite quality, which led to reduced strain and a lower density of dislocations. These properties contribute to minimizing non-radiative recombination losses and enhancing charge carrier mobility, both of which are crucial for maximizing the photovoltaic performance of the device. These factors bring A3 closer to the theoretical Shockley-Queisser  (S-Q) efficiency limit, a benchmark for photovoltaic performance. Further analysis using SCAPS-1D simulations supported these experimental findings, demonstrating the significance of optimizing critical parameters such as the minority carrier lifetime. The simulations revealed that high losses in short-circuit current density (JSC) were a primary limiting factor in performance, emphasizing the need for careful tuning of these parameters to reduce losses. This work highlights the critical role of precise material engineering in developing highly efficient perovskite solar cells. The study not only provides insights into the structural and electronic properties essential for performance enhancement but also underscores the potential of Cs3Bi2I9 as a promising material for photovoltaic applications. The findings offer valuable guidance for the next generation of high-efficiency, low-toxicity, and lead-free perovskite solar cells, aligning with global efforts to transition to clean, renewable energy sources.
Electrical performance for in-situ doping of phosphorous in silver paste screen-printed contact on p-type silicon solar cell Mohd Sinin, Nurul Aqidah; Mohd Rais, Ahmad Rujhan; Mohd Ahir, Zon Fazlila; Sopian, Kamaruzzaman; Ibrahim, Mohd Adib
International Journal of Renewable Energy Development Vol 14, No 4 (2025): July 2025
Publisher : Center of Biomass & Renewable Energy (CBIORE)

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.61435/ijred.2025.60822

Abstract

This study addresses the challenge of enhancing the efficiency of silicon solar cells by investigating the electrical performance of phosphorus-doped silver (Ag-P) pastes used in screen-printed contacts on p-type silicon wafers. Conventional silver (Ag) pastes serve as conductive contacts but lack the ability to simultaneously doped the emitter region, leading to complex fabrication processes and limiting cell efficiency. To overcome this, we explore an in-situ approach using Ag-based paste and phosphoric acid (H3PO4), which combines emitter doping and contact formation, thereby simplifying fabrication while enhancing performance. In this study, both un-doped and phosphorus-doped Ag pastes were screen-printed onto planar, textured, and silicon dioxide-passivated silicon wafers, followed by annealing at 900°C by using a round quartz tube furnace with 45s in and 45s out with a holding time of the 40s. Electrical performance was measured through light-current-voltage (LIV) and quantum efficiency analyses. According to the short circuit current density (JSC) for only Ag-based paste screen-printed on only one-sided (A) and both-sided (B) indicates a higher JSC value of 9.63 mA/cm2 for A meanwhile, sample B gains 7.54 mA/cm2. For comparison, the JSC values for screen-printed Ag-P on only one side (A) and both sides (B) are 10.4 mA/cm² and 10.4 mA/cm², respectively. Thus, the overall efficiency of Ag-P screen-printed on a one-sided Si wafer was 1.65% higher than that of the rest of the samples. However, the internal quantum efficiency (IQE) and external quantum efficiency (EQE) for Ag-P screen-printed on Si wafer display higher percentages between 80-83% and 63-73% at a wavelength range of 650 to 900 nm than the rest of the samples. The QE measurements reveal that Ag-P paste effectively mitigates surface recombination losses, resulting in higher efficiency and improved charge carrier collection. These findings indicate that Ag-P paste offers a viable alternative to conventional screen-printed contacts by enhancing both device performance and electrical efficiency through integrated doping and contact formation. This work suggests that Ag-P paste could play a vital role in advancing high-performance silicon solar cell technologies.