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Rakhmonov, B. R.
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Automotive Engineering Computer Science & IT Control & Systems Engineering Engineering Industrial & Manufacturing Engineering Materials Science & Nanotechnology

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Influence of Impurity Atoms of Gallium and Antimony on the Concentration of Optically Active Oxygen in the Silicon Lattice Isakov, B. O.; Rakhmonov, B. R.; Subkhonberdiev, Sh. N.
International Journal on Orange Technologies Vol. 4 No. 6 (2022): IJOT
Publisher : Research Parks Publishing LLC

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Abstract

The effect of impurity atoms of gallium and antimony on the concentration of optically active oxygen in the silicon lattice is studied. It is shown that the oxygen concentration in silicon samples doped with gallium decreases by 87.2%, doped with antimony decreases by 99.2%, and in the case of doping with gallium and antimony decreases simultaneously only by 28.7%. These results can be explained by the chemical interaction of gallium and antimony atoms, which leads to the restoration of the oxygen concentration in optical active centers.
Co-Authors Isakov, B. O. Subkhonberdiev, Sh. N.