Article Per Year (5 Year)
p-Index From 2021 - 2026
0.947
P-Index
This Author published in this journals
All Journal Control Systems and Optimization Letters Signal and Image Processing Letters Methods in Science and Technology Studies
Khan, Md Yakub Ali
Unknown Affiliation
Aerospace Engineering Automotive Engineering Computer Science & IT Control & Systems Engineering Electrical & Electronics Engineering Engineering Industrial & Manufacturing Engineering

Published : 5 Documents Claim Missing Document
Claim Missing Document
Check
Articles

Found 5 Documents
Search

 1 
Computation and Analysis of Highly Stable and Efficient Non-toxic Perovskite CsSnGeI3 Based Solar Cells to Enhance Efficiency Using SCAPS-1D Software Hossain, Md Momin; Khan, Md Yakub Ali; Halim, Md Abdul; Elme, Nafisa Sultana; Islam, Md Shoriful
Signal and Image Processing Letters Vol 5, No 2 (2023)
Publisher : Association for Scientific Computing Electrical and Engineering (ASCEE)

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.31763/simple.v5i2.66

Abstract

This paper examines the physical, optical, and electrical characteristics of cesium tin-germanium triiodide based single halide Perovskite absorption materials in order to provide the best photovoltaic application. In light of the diversification of the use of natural resources, perovskite solar cells are becoming more and more essential for capturing renewable energy. In this research work, a cesium tin–germanium triiodide (CsSnGeI3) perovskite-based solar cell (PSC) has been reported to achieve a high-power-conversion efficiency (PCE).  CsSnGeI3 perovskite-based solar cell has been proposed for the Pb and toxic-free (Al/FTO/ TiO2/CsSnGeI3/Mo) structure simulated in Solar Cell Capacitance Simulator (SCAPS-1D software. At first aluminum, fluorine-doped tin oxide, Titanium dioxide, cesium tin–germanium triiodide and   Molybdenum have been inserted into SCAPS and simulated using specific temperature. In this simulation, the electron transport layer (ETL) FTO, the buffer layer  TiO2, and the absorber layer  CsSnGeI3 were all used. Utilizing variations in thickness including absorber and buffer, defect density, operating temperature, back contact work function, series and shunt resistances, acceptor density, and donor density, the performance of the proposed photovoltaic devices was quantitatively assessed. Throughout the simulation, the absorber layer thickness was held constant at 1.6 ?m, the buffer layer at 0.05 ?m, and the electron transport layer at 0.5 ?m. A solar cell efficiency of 24.75%, an open-circuit voltage of 0.95 volts, a short-circuit current density of 30.61 mA/cm2, and a fill factor (FF) of 85.42% have all been recorded for the  CsSnGeI3 absorber layer. Our ground-breaking findings unequivocally show that CsSnGeI3-based PSC is a strong contender to quickly overtake other single-junction solar cell technologies as the most effective.
Numerical Simulation of Highly Efficient Cs2TiI6 Based Cd Free Perovskites Solar Cell with the Help of Optimized ETL and HTL Using SCAPS-1D Software Halim, Md Abdul; Islam, Md Shafiqul; Hossain, Md Momin; Khan, Md Yakub Ali
Signal and Image Processing Letters Vol 5, No 1 (2023)
Publisher : Association for Scientific Computing Electrical and Engineering (ASCEE)

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.31763/simple.v5i1.57

Abstract

In order to provide the best photovoltaic application, this paper examines the physical, optical, and electrical aspects of Cesium Titanium (IV) based single halide Perovskite absorption materials. Perovskite solar cell for scavenging renewable energy, has grown more and more necessary in the context of the diversification of the use of natural resources. Due to its efficient band gap of 1.8 eV, Cs2TiI6 has become a desirable contender for today's thin-film solar cell. This article shows the spectrum responses of a planar Au/FTO/C60/Cs2TiI6/CH3NH3SnI3/Al based structure where CH3NH3SnI3 is used as a Hole transport layer (HTL) and C60 and FTO are utilized as Electron transport layers (ETL) under 300K temperature conditions. This research demonstrates that employing Fluorine doped Tin Oxide (FTO) and Ultrathin Fullerene (C60) as Electron transport layer charge extraction can be achieved. FTO provides high transmission, strong conductivity, and good adherence for the deposited layers. When used in a coevaporated perovskite solar cell, a C60 layer with an ideal thickness less than 15 nm improves charge extraction. This article tried to avoid cadmium for solar cell generation due to its toxicity on environment. The simulation included detailed configuration optimization for the thickness of the absorber layer, HTL, ETL, defect density, Wavelength, temperature, and series resistance.  In this work the Power Conversion Efficiency (?), Fill Factor (FF), Open-circuit Voltage (Voc), J-V Curve, Quantum Efficiency and Short-circuit current (Jsc) have been measured by varying thickness of absorber layer in the range of 1µm to 6 µm. Energy harvesting effectiveness, cost-effectiveness of perovskite solar cells is all impacted by their PCE, which is a crucial characteristic. The key variables that define a perovskite solar cell's performance are the Voc and fill factor (FF). When the voltage is zero, the solar cell can produce its maximum current, which is represented by the (Isc).  The optimized perovskite solar cell shows a power conversion efficiency of 21.8429% when the absorber layer thickness is 4µm and electron transport layer thickness is 0.6µm.
A Review on Stability Challenges and Probable Solution of Perovskite–silicon Tandem Solar Cells Hossain, Md Momin; Khan, Md Yakub Ali; Halim, Md. Abdul; Elme, Nafisa Sultana; Hussain, Md. Nayeem
Signal and Image Processing Letters Vol 5, No 1 (2023)
Publisher : Association for Scientific Computing Electrical and Engineering (ASCEE)

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.31763/simple.v5i1.58

Abstract

Perovskite-silicon tandem solar cells have shown great potential in increasing the efficiency of solar cells, with efficiencies reaching as high as 25%. However, the stability of these cells remains a major challenge that must be addressed before they can be commercialized. This review focuses on the stability challenges of perovskite-silicon tandem solar cells and possible solutions to address these challenges. The main stability issues include the instability of the perovskite layer, the degradation of the silicon layer, and the failure of the interfaces between the layers. One solution is to use more stable perovskite materials, such as methylammonium lead iodide (MAPbI3) or formamidinium lead iodide (FAPbI3), which have shown better stability than traditional perovskite materials. Another solution is to use passivating layers, such as titanium dioxide, to protect the perovskite layer from degradation. Another solution is to use silicon heterojunction (SHJ) solar cells, which have shown better stability than traditional silicon solar cells. In addition, the use of encapsulation techniques, such as using a barrier layer or a hermetic seal, can help to protect the tandem solar cell from environmental degradation. In order to improve the stability of perovskite-silicon tandem solar cells, it is important to continue research on the development of more stable perovskite materials, passivating layers, and encapsulation techniques. Additionally, further research is needed to understand the mechanisms of degradation and to develop methods for monitoring and mitigating the degradation of the tandem solar cells.
A Review on Nanotechnology and Its Impact with Challenges on Electrical Engineering Khan, Md Yakub Ali; Elme, Nafisa Sultana; Tahrim, H M; Raza, Kala
Control Systems and Optimization Letters Vol 2, No 1 (2024)
Publisher : Peneliti Teknologi Teknik Indonesia

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.59247/csol.v2i1.78

Abstract

Nanotechnology has revolutionized the field of electrical engineering, enabling the development of new materials, devices, and systems with unique properties and functionalities. This review article provides an overview of the impact of nanotechnology on electrical engineering, covering various areas such as analogue and digital circuits, power electronics, sensors, and energy harvesting. The article begins by discussing the basics of nanotechnology, Graphene-based Nanotechnology, nanoscience, Nano photonic and its potential impact on electrical engineering. It then focuses on the application of nanotechnology in various fields of electrical engineering, such as the development of high-performance transistors, nanoscale sensors, and efficient energy conversion systems. The article also discusses the challenges associated with the application of nanotechnology in electrical engineering, such as the need for high-precision fabrication   techniques, the   issue   of   reliability   and reproducibility, and the potential health and environmental concerns. Overall, the   review   article   highlights   the   immense   potential   of nanotechnology in electrical engineering and its impact on various fields of research and development. While challenges exist, continued research and development in nanotechnology promise to lead to significant advancements in electrical engineering, enabling the development of more efficient, and sustainable systems and devices.
Thin-Film Deposition for ZnO-Based Semiconductors: Advantages, Challenges, and Future Directions Haque, Md Najmul; Khan, Md Yakub Ali
Methods in Science and Technology Studies Vol. 1 No. 2 (2025): December
Publisher : PT. Teknologi Futuristik Indonesia

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.64539/msts.v1i2.2025.342

Abstract

This research dives into the field of thin film deposition, with a particular emphasis on its application in ZnO-based semiconductors. The examination tries to illustrate the array of benefits, intricate challenges, and bright prospects inherent in this field through an in-depth case study. Notably, the work emphasizes the benefits of thin film deposition techniques in ZnO-based semiconductor production, such as precise control over film thickness, improved material use, and the ability to modify electrical properties. It does, how-ever, recognize the difficulties in assuring uniformity and quality control in deposition, dealing with complex deposition processes, addressing interface effects to maximize device performance, and navigating material compatibility constraints. In terms of the future, the study sees significant potential in the development of advanced materials to augment ZnO-based semiconductor functionalities, the incorporation of nanotechnology to boost performance, and the emergence of novel monitoring strategies for real-time quality assurance during deposition. Sustainable deposition methods are also being considered considering environmental concerns. The study continues by emphasizing the revolutionary significance of ZnO-based semiconductors in many applications and emphasizing the importance of interdisciplinary collaboration to unlock the full spectrum of benefits and overcome hurdles in this dynamic field. This research provides a comprehensive look at the complex domain of thin film deposition in ZnO-based semiconductor environments, shedding light on its potential to transform technological landscapes and inspire creative solutions.
Co-Authors Elme, Nafisa Sultana Halim, Md Abdul Haque, Md Najmul Hossain, Md Momin Hussain, Md. Nayeem Islam, Md Shafiqul Islam, Md Shoriful Md. Abdul Halim, Md. Abdul Raza, Kala Tahrim, H M