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All Journal International Journal of Electrical and Computer Engineering Indonesian Journal of Electrical Engineering and Informatics (IJEEI)
Zarrik, Samia
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Computer Science & IT Electrical & Electronics Engineering

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Efficient high-gain low-noise amplifier topologies using GaAs FET at 3.5 GHz for 5G systems Zarrik, Samia; Bendali, Abdelhak; Fadlaoui, Elmahdi; Benkhadda, Karima; Habibi, Sanae; Kobbi, Mouad El; Sahel, Zahra; Habibi, Mohamed; Hadjoudja, Abdelkader
International Journal of Electrical and Computer Engineering (IJECE) Vol 15, No 4: August 2025
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijece.v15i4.pp3833-3842

Abstract

Achieving a gain greater than 18 dB with a noise figure (NF) below 2 dB at 3.5 GHz remains a formidable challenge for low-noise amplifiers (LNAs) in sub-6 GHz 5G systems. This study explores and evaluates various LNA topologies, including single-stage designs with inductive source degeneration and cascade configurations, to optimize performance. The single-stage topology with inductive source degeneration achieves a gain of 18.141 dB and an NF of 1.448 dB, while the cascade-stage common-source low-noise amplifier with inductive degeneration achieves a gain of 32.714 dB and a noise figure of 1.563 dB. These results underscore the importance of GaAs FET technology in meeting the demanding requirements of 5G systems, specifically in the 3.5 GHz frequency band. The advancements demonstrated in gain, noise figure, and linearity affirm the viability of optimized LNA topologies for high-performance 5G applications, supporting improved signal quality and reliability essential for modern telecommunication infrastructure.
Optimized Dual-Band Reconfigurable Power Amplifier for 5G Mouad, El Kobbi; Bendali, Abdelhak; Zarrik, Samia; Habibi, Sanae; El Wardi, Reda Abid; Habibi, Mohamed
Indonesian Journal of Electrical Engineering and Informatics (IJEEI) Vol 13, No 3: September 2025
Publisher : IAES Indonesian Section

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.52549/ijeei.v13i3.5685

Abstract

This article presents the design of a dual-band power amplifier capable of operating in three different classes: A, AB, and B. Simulation results reveal that a single power amplifier can efficiently operate at two specific frequencies of the 5G core band, namely 3.5 GHz and 3.8 GHz. The amplifier demonstrates exceptional stability and matching across both frequency bands. It achieves a maximum gain of 17.7 dB, a maximum output power of 41.2 dBm, and a maximum power-added efficiency (PAE) of 70%. These performance characteristics are achieved through an innovative design that allows for frequency band reconfiguration via a PIN diode switch, as well as the selection of the operating mode among classes A, AB, and B. This flexibility makes the amplifier ideal for applications in 5G communication systems, offering an optimal balance between linearity, energy efficiency, and overall performance
Co-Authors Bendali, Abdelhak Benkhadda, Karima El Wardi, Reda Abid Fadlaoui, Elmahdi Habibi, Sanae Hadjoudja, Abdelkader Kobbi, Mouad El Mohamed Habibi Mouad, El Kobbi Sahel, Zahra