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All Journal International Journal of Electrical, Computer, and Biomedical Engineering (IJECBE)
Maritza, Afiya
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Computer Science & IT Electrical & Electronics Engineering Materials Science & Nanotechnology Medicine & Pharmacology

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A High Gain Concurrent Dual-band Low-Noise Amplifier in 130-nm BiCMOS Technology Kurniawan, Taufiq Alif; Maritza, Afiya
International Journal of Electrical, Computer, and Biomedical Engineering Vol. 2 No. 1 (2024)
Publisher : Universitas Indonesia

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.62146/ijecbe.v2i1.15

Abstract

This paper presents a fully integrated concurrent 15/30-GHz dual-band low-noise amplifier (LNA). The proposed concurrent LNA IC is designed and simulated in 130-nm BiCMOS technology. The new passive LC notch filter is proposed to realize high gain and low noise figure over dual-band frequency, simultaneously. The simulated BiCMOS LNA IC has exhibited peak gains of 30.1/23.7 dB at 15/30-GHz, respectively, with 20-mW power consumption from 1-V supply. The concurrent dual-band LNA achieves noise figure of 2.2/2.9-dB and IIP3 of -18.2/-8.8 dBm at the respective passbands. Therefore, the proposed dual band concurrent LNA IC is applicable to front-end RF receivers for Ku-Band and Ka-Band systems.
Co-Authors Kurniawan, Taufiq Alif