Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor

Ahmed Mahmood (Universiti Malaysia Pahang)
Waheb A. Jabbar (Universiti Malaysia Pahang)
Yasir Hashim (Ishik University)
Hadi Bin Manap (Universiti Malaysia Pahang)

International Journal of Electrical and Computer Engineering
Vol 9, No 4: August 2019

In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to simulate and compare the considered characteristics based on variable channel dimensions: length, width and oxide thickness. The results demonstrate that the best performance of InAs- FinFET was achieved with channel length = 25 nm, width= 5 nm, and oxide thickness between 1.5 to 2.5 nm according to the selected scaling factor (K = 0.125).