High rejection self-oscillating up-conversion mixer for fifth-generation communications

Abdelhafid Es-saqy (Sidi Mohamed Ben Abdellah University)
Maryam Abata (Sidi Mohamed Ben Abdellah University)
Mohammed Fattah (Moulay Ismail University)
Said Mazer (Sidi Mohamed Ben Abdellah University)
Mahmoud Mehdi (Lebanese University)
Moulhime El Bekkali (Sidi Mohamed Ben Abdellah University)
Catherine Algani (Université Gustave Eiffel)

International Journal of Electrical and Computer Engineering
Vol 13, No 5: October 2023

This paper presents the design of a pseudomorphic high electron mobility transistor (pHEMT) self-oscillating mixer (SOM) for millimeter wave wireless communication systems. The 180° out-of-phase technique is chosen to both improve the desired lower sideband (LSB) signal and to achieve a satisfactory rejection of the unwanted signals (LO, USB and IF). This SOM is designed on the PH15 process of UMS foundry which is based on 0.15 µm GaAs pHEMT. The signal is up-converted from 2 GHz-IF frequency to 26 GHz-LSB frequency, using an autogenerated 28 GHz-LO signal. Simulations were performed using the advanced design system (ADS) workflow. They show 6.4 dB conversion gain and a signal rejection rate of 29.7 dB for the unwanted USB signal. the chip size is 3.6 mm2.