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All Journal International Journal of Electrical and Computer Engineering
Maryam Abata
Sidi Mohamed Ben Abdellah University
Computer Science & IT Electrical & Electronics Engineering

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A 5G mm-wave compact voltage-controlled oscillator in 0.25 µm pHEMT technology Abdelhafid Es-saqy; Maryam Abata; Mahmoud Mehdi; Mohammed Fattah; Said Mazer; Moulhime El Bekkali; Catherine Algani
International Journal of Electrical and Computer Engineering (IJECE) Vol 11, No 2: April 2021
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijece.v11i2.pp1036-1042

Abstract

A 5G mm-wave monolithic microwave integrated circuit (MMIC) voltage-controlled oscillator (VCO) is presented in this paper. It is designed on GaAs substrate and with 0.25 µm-pHEMT technology from UMS foundry and it is based on pHEMT varactors in order to achieve a very small chip size. A 0dBm-output power over the entire tuning range from 27.67 GHz to 28.91 GHz, a phase noise of -96.274 dBc/Hz and -116.24 dBc/Hz at 1 and 10 MHz offset frequency from the carrier respectively are obtained on simulation. A power consumption of 111 mW is obtained for a chip size of 0.268 mm2. According to our knowledge, this circuit occupies the smallest surface area compared to pHEMTs oscillators published in the literature.
High rejection self-oscillating up-conversion mixer for fifth-generation communications Abdelhafid Es-saqy; Maryam Abata; Mohammed Fattah; Said Mazer; Mahmoud Mehdi; Moulhime El Bekkali; Catherine Algani
International Journal of Electrical and Computer Engineering (IJECE) Vol 13, No 5: October 2023
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijece.v13i5.pp4979-4986

Abstract

This paper presents the design of a pseudomorphic high electron mobility transistor (pHEMT) self-oscillating mixer (SOM) for millimeter wave wireless communication systems. The 180° out-of-phase technique is chosen to both improve the desired lower sideband (LSB) signal and to achieve a satisfactory rejection of the unwanted signals (LO, USB and IF). This SOM is designed on the PH15 process of UMS foundry which is based on 0.15 µm GaAs pHEMT. The signal is up-converted from 2 GHz-IF frequency to 26 GHz-LSB frequency, using an autogenerated 28 GHz-LO signal. Simulations were performed using the advanced design system (ADS) workflow. They show 6.4 dB conversion gain and a signal rejection rate of 29.7 dB for the unwanted USB signal. the chip size is 3.6 mm2.
Co-Authors Abdelhafid Es-saqy Catherine Algani Catherine Algani Mahmoud Mehdi Mohammed Fattah Mohammed Fattah Moulhime El Bekkali Said Mazer