<![CDATA[In the domain of gallium nitride based high electron mobility transistors (GaN HEMT), this work refines a class A low noise amplifier (LNA) tailored for fifth generation (5G) wireless applications within the sub-6 GHz band. Employing a common-source topology and leveraging GaN HEMT technology, the amplifier seamlessly achieves operation at 3.5 GHz. Simulations were conducted using Advanced Design System (ADS) software. The GaN HEMT transistor manifests noteworthy intrinsic and extrinsic characteristics, with a Vds of 6 V, Vgs of -1.56 V, and Id of 1024 mA. Through meticulous optimization within the [3.3-3.9] GHz frequency band, the GaN HEMT transistor attains an impressive maximum gain of 16.225 dB, coupled with a minimal low noise figure (NF) of 1.232 dB. Additionally, the amplifier showcases noteworthy power added efficiency (PAE) of approximately 60.527%. These exceptional attributes position the amplifier as highly suitable for sub-6 GHz and millimeter-wave applications across the extensive 5G spectrum. The investigation is centered on precisely situating the LNA as a pivotal catalyst for improving 5G network front-end performance. With a dedicated focus on frequencies below 6 GHz, the research not only addresses challenges but also pioneers’ advancements in 5G application LNA design, ultimately elevating the overall system performance.]]>
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