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All Journal TELKOMNIKA (Telecommunication Computing Electronics and Control)
Karima Benkhadda
Ibn Tofail University
Computer Science & IT

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High-efficiency rectifier achieves 63% power conversion in low start-up voltage for UHF RFID tags in 180 nm CMOS technology Zahra Sahel; Sanae Habibi; Abdelhak Bendali; Abid Reda El Wardi; Karima Benkhadda; Samia Zarrik; Hayat El Abassi; Fatehi ALtalqi; Omar Mouhib; Mohamed Habibi
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 22, No 6: December 2024
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v22i6.25996

Abstract

This paper presents an N-metal-oxide semiconductor (NMOS) rectifier designed for efficient radio frequency (RF) energy harvesting and wireless power transmission in passive ultra-high frequency (UHF) radio frequency identification (RFID) applications. The rectifier’s efficiency is improved through an innovative diode with a new block connection, reducing the threshold voltage compared to conventional diode transistors. This enhancement significantly boosts output voltage and efficiency. A seven-stage configuration, based on the proposed diode and optimized via a superposition method, has been evaluated for its ability to increase DC output voltage and power conversion efficiency (PCE), particularly at low RF input power levels. Simulations show a PCE of 63% at 900 MHz with an RF input of -11 dBm, delivering 1.610 V across a 0.518 MΩ load. Notably, the rectifier maintains a PCE above 30% across a wide input power range from -32 dBm to -5 dBm, overcoming a key challenge of maintaining efficiency under low input power conditions. The circuit architecture was implemented using standard 180 nm TSMC CMOS technology, showcasing its practical applicability in RFID systems.
Designing common-source low noise amplifier utilizing GaN HEMT for sub-6 GHz in 5G wireless applications Samia Zarrik; Abdelhak Bendali; Fatehi ALtalqi; Karima Benkhadda; Sanae Habibi; Zahra Sahel; Mouad El Kobbi; Abdelkader Hadjoudja; Mohamed Habibi
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 23, No 1: February 2025
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v23i1.26324

Abstract

In the domain of gallium nitride based high electron mobility transistors (GaN HEMT), this work refines a class A low noise amplifier (LNA) tailored for fifth generation (5G) wireless applications within the sub-6 GHz band. Employing a common-source topology and leveraging GaN HEMT technology, the amplifier seamlessly achieves operation at 3.5 GHz. Simulations were conducted using Advanced Design System (ADS) software. The GaN HEMT transistor manifests noteworthy intrinsic and extrinsic characteristics, with a Vds of 6 V, Vgs of -1.56 V, and Id of 1024 mA. Through meticulous optimization within the [3.3-3.9] GHz frequency band, the GaN HEMT transistor attains an impressive maximum gain of 16.225 dB, coupled with a minimal low noise figure (NF) of 1.232 dB. Additionally, the amplifier showcases noteworthy power added efficiency (PAE) of approximately 60.527%. These exceptional attributes position the amplifier as highly suitable for sub-6 GHz and millimeter-wave applications across the extensive 5G spectrum. The investigation is centered on precisely situating the LNA as a pivotal catalyst for improving 5G network front-end performance. With a dedicated focus on frequencies below 6 GHz, the research not only addresses challenges but also pioneers’ advancements in 5G application LNA design, ultimately elevating the overall system performance.
1×2 microstrip patch antennas array for mm-waves 5G application Karima Benkhadda; Fatehi ALtalqi; Abdelhak Bendali; Abderrahim Haddad; Samia Zarrik; Sanae Habibi; Zahra Sahel; Mohamed Habibi; Abdelkader Hadjoudja
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 23, No 1: February 2025
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v23i1.26263

Abstract

In this paper we present the design of an antenna array for 5G applications. The proposed prototype of the antenna array is design to function at both 24 GHz and 27 GHz frequencies, utilizing Rogers RT5880 with a permittivity equal to 2.2 and a loss tangent of 0.0009. The CST Studio Suite software is employed for simulating the suggested. The primary goals of this research encompass achieving a notable return loss, increased gain, minimized voltage standing wave ratio (VSWR), enhanced directivity, and an overall improvement in operational efficiency. The results of the simulation showcase encouraging performance metrics, including a return loss of -68.70 dB, a bandwidth larger 7.369 GHz (ranging from 22.191 GHz to 29.56 GHz), a gain of 10.52 dB. Furthermore, the microstrip patch antennas (MPA) array system showcases an impressive efficiency rating of 95.63%.
Co-Authors Abdelhak Bendali Abdelkader Hadjoudja Abderrahim Haddad Abid Reda El Wardi Fatehi ALtalqi Hayat El Abassi Mohamed Habibi Mouad El Kobbi Omar Mouhib Samia Zarrik Sanae Habibi Zahra Sahel