Article Per Year (5 Year)
p-Index From 2021 - 2026
0.553
P-Index
This Author published in this journals
All Journal TELKOMNIKA (Telecommunication Computing Electronics and Control) Bulletin of Electrical Engineering and Informatics
Mouad El Kobbi
Ibn Tofail University
Computer Science & IT Electrical & Electronics Engineering

Published : 2 Documents Claim Missing Document
Claim Missing Document
Check
Articles

Found 2 Documents
Search

 1 
Designing common-source low noise amplifier utilizing GaN HEMT for sub-6 GHz in 5G wireless applications Samia Zarrik; Abdelhak Bendali; Fatehi ALtalqi; Karima Benkhadda; Sanae Habibi; Zahra Sahel; Mouad El Kobbi; Abdelkader Hadjoudja; Mohamed Habibi
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 23, No 1: February 2025
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v23i1.26324

Abstract

In the domain of gallium nitride based high electron mobility transistors (GaN HEMT), this work refines a class A low noise amplifier (LNA) tailored for fifth generation (5G) wireless applications within the sub-6 GHz band. Employing a common-source topology and leveraging GaN HEMT technology, the amplifier seamlessly achieves operation at 3.5 GHz. Simulations were conducted using Advanced Design System (ADS) software. The GaN HEMT transistor manifests noteworthy intrinsic and extrinsic characteristics, with a Vds of 6 V, Vgs of -1.56 V, and Id of 1024 mA. Through meticulous optimization within the [3.3-3.9] GHz frequency band, the GaN HEMT transistor attains an impressive maximum gain of 16.225 dB, coupled with a minimal low noise figure (NF) of 1.232 dB. Additionally, the amplifier showcases noteworthy power added efficiency (PAE) of approximately 60.527%. These exceptional attributes position the amplifier as highly suitable for sub-6 GHz and millimeter-wave applications across the extensive 5G spectrum. The investigation is centered on precisely situating the LNA as a pivotal catalyst for improving 5G network front-end performance. With a dedicated focus on frequencies below 6 GHz, the research not only addresses challenges but also pioneers’ advancements in 5G application LNA design, ultimately elevating the overall system performance.
Design and simulation of a high-efficiency class F power amplifier for 5G wireless energy transmission Mouad El Kobbi; Abdelhak Bendali; Samia Zarrik; Sanae Habibi; Abid Reda El Wardi; Mohamed Habibi; Abdelkader Hadjoudja
Bulletin of Electrical Engineering and Informatics Vol 15, No 5: October 2026
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/eei.v15i5.10883

Abstract

This paper presents the design and optimization of a high-efficiency class F power amplifier (PA) for 5G communication systems. The proposed design focuses on achieving optimal efficiency, output power Pout, and stability through precise harmonic control and waveform shaping. Using advanced simulation techniques, the PA achieves a power-added efficiency (PAE) of 80%, a Pout of 40.73 dBm, and a gain of 20 dB over a 120 MHz bandwidth centered at 3.5 GHz. Stability is ensured with a stability factor of 1.5 and a stability measure of 0.8 across the operating band. The first three harmonics are effectively managed to enhance efficiency, with the drain current (IDS) shaped into a square waveform and the drain voltage (VDS) into a quasi-sinusoidal waveform. These results demonstrate the capability of the proposed class F PA to meet stringent 5G requirements, offering high performance, strong stability, and efficient operation for sub-6 GHz applications.
Co-Authors Abdelhak Bendali Abdelkader Hadjoudja Abid Reda El Wardi Fatehi ALtalqi Karima Benkhadda Mohamed Habibi Samia Zarrik Sanae Habibi Zahra Sahel