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Pusat Riset Material Anorganik dan Senyawa Kompleks, Prodi Magister Ilmu Material Universitas Sriwijaya, Jl. Padang Selasa No 524 Bukit Besar Palembang Sumatera Selatan, 30139.
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INDONESIA
Indonesian Journal of Material Research
Published by Universitas Sriwijaya
ISSN : 29871654     EISSN : 29871654     DOI : https://doi.org/10.26554/ijmr.xxx
Core Subject : Science, Engineering,
Chemical Engineering, Chemistry & Bioengineering Civil Engineering, Building, Construction & Architecture Electrical & Electronics Engineering Energy Engineering
The scope of IJMR encompasses a diverse array of research areas, including but not limited to Nanomaterials and nanotechnology Biomaterials and biocompatibility Polymers, composites, and hybrid materials, Electronic, optical, and magnetic material Advanced ceramics and glasses, Metals and alloys Functional materials and smart materials, Surface engineering and coatings, Materials characterization, testing, and simulation Materials for energy storage, conversion, and harvesting, Environmental and sustainable materials Advanced manufacturing processes and materials engineering
Arjuna Subject : Ilmu Material (semua kategori) - Ilmu Material (Lain-Lain)
Articles 64 Documents
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Preparing and Characterizing Porous MgO and NiO/MgO Nano-Compounds Nguyen Thi Phuong Loan
Indonesian Journal of Material Research Vol. 4 No. 3 (2026): Future Issue: November
Publisher : Magister Program of Material Science Graduate School of Universitas Sriwijaya

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.26554/ijmr.20264389

Abstract

Porous MgO and NiO/MgO nanocomposites have attracted significant attention due to their potential applications in heterogeneous catalysis. In this study, MgO and NiO/MgO nanostructures were successfully synthesized using a modified citrate precursor method. The structural and textural properties of the obtained materials were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and nitrogen adsorption–desorption (BET) analysis. The results reveal that the synthesized MgO exhibits a high specific surface area of up to 230 m²/g with particle sizes ranging from 5 to 20 nm. The incorporation of NiO into the mesoporous MgO matrix leads to changes in pore structure and particle growth behavior. The modified synthesis approach enables improved control over crystallite size and porosity compared to conventional methods. These findings suggest that the prepared materials are promising candidates for catalytic applications.
Structural and Optical Properties of Co-Doped ZnO Nanoparticles Synthesized by the Sol-Gel Method Nguyen Thi Phuong Loan; Lee Hsiao-Yi; Phan Thi Minh Man
Indonesian Journal of Material Research Vol. 4 No. 3 (2026): Future Issue: November
Publisher : Magister Program of Material Science Graduate School of Universitas Sriwijaya

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.26554/ijmr.20264395

Abstract

ZnO is recognized as a wide-bandgap semiconductor (3.37 eV) possessing a relatively huge exciton binding power (~60 meV), which makes it highly attractive for optoelectronic technologies. According to the current study, Co-incorporated ZnO nanoparticles were fabricated through an economical sol-gel synthesis route. The structural and optic characteristics were comprehensively underwent examination using XRD, SEM, and UV-Vis methods. Diffraction results reveal that all synthesized samples retain a pure hexagonal wurtzite phase, with no evidence of secondary phases, confirming effective Co incorporation into the ZnO lattice. As the Co concentration increases, a slight reduction in crystallite size is observed, indicating lattice distortion induced by dopant atoms. SEM analysis shows that the particles are predominantly quasi-spherical with minor agglomeration, and doping does not significantly alter their morphology. From an optical perspective, increasing Co content causes the absorption edge to shift toward longer wavelengths, accompanied by stronger absorption in the visible region. Bandgap values, extracted using Tauc analysis, reduce from 3.18 eV (undoped ZnO) to 2.94 eV at 3 mol% Co, followed by a marginal increase at higher concentrations. This trend is associated with the introduction of impurity-related electronic states within the bandgap. Overall, Co incorporation provides an effective means to modulate the optical response of ZnO nanostructures, thereby enhancing their suitability for advanced optoelectronic applications.
Influence of Carrier Localization, Recombination, and Dispersion on Carrier Dynamics in InGaN/GaN Quantum Wells Nguyen Thi Phuong Loan; Hong Cong Pham; Phan Thi Minh Man
Indonesian Journal of Material Research Vol. 4 No. 3 (2026): Future Issue: November
Publisher : Magister Program of Material Science Graduate School of Universitas Sriwijaya

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.26554/ijmr.20264396

Abstract

This study investigates carrier recombination dynamics in InGaN/GaN quantum wells using time-resolved techniques, including induced grating methods, time-resolved photoluminescence, and pump–probe spectroscopy. Diffusion and carrier lifetime dependency on excitation density is systematically analyzed for structures with varying indium compositions and barrier configurations. The results reveal that carrier lifetime decreases while diffusion coefficients increase with rising excitation density, indicating enhanced nonradiative recombination under high carrier concentrations. This behavior is more pronounced in samples with higher indium content, suggesting a strong influence of carrier localization. The experimental observations are interpreted using an extended ABC recombination model that incorporates carrier density–dependent recombination processes. The analysis demonstrates that defect-assisted recombination becomes dominant at high excitation levels, while Auger recombination remains negligible within the investigated carrier density range. Furthermore, pump–probe measurements confirm distinct recombination pathways associated with localized and delocalized carrier states. These findings provide important insights into the physical mechanisms governing carrier dynamics and performance droop in InGaN-based quantum well designs, offering guidance for the optimization of high-performance optoelectronic devices.
Enhancing the Optoelectronic and Photovoltaic Performance of Thermally Evaporated TeSn/c-Si Heterojunctions via Thermal Annealing Management Roaa R. Ramadhan; Zahraa J. Hamakhan; F. Y. Mohammed
Indonesian Journal of Material Research Vol. 4 No. 3 (2026): Future Issue: November
Publisher : Magister Program of Material Science Graduate School of Universitas Sriwijaya

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.26554/ijmr.20264399

Abstract

This study used high-vacuum (10⁻⁵ Torr) thermal evaporation to fabricate a hybrid tellurium-tin/crystalline silicon (TeSn/c-Si) junction. The junction was deposited at room temperature, 323 K, and 348 K to evaluate its structural and electrical properties. Thin TeSn layers (500 nm thick) and the resulting diodes underwent thermal annealing. DC conductivity testing revealed a double-transfer mechanism governed by the Arrhenius equation. A significant increase in the activation energies Ea1 and Ea2 was observed following thermal annealing at 348 K, reaching 0.44 eV and 0.65 eV, respectively. This indicates an improvement in the layer’s crystallinity due to annealing and a decrease in the density of local states. Capacitance-voltage (C-V) measurements confirm the formation of a sharp heterojunction interface, exhibiting a significant improvement in the internal potential (Vbi) from 1.24 eV (at room temperature) to 1.7 eV (at 348 K) due to the passivation of the interface states. Furthermore, the current-voltage (I-V) characteristics in darkness show thermal emission behavior under forward bias and a gradual breakdown under reverse bias. Under illumination, the heterojunction exhibited a significant improvement in photovoltaic performance, with a peak short-circuit current density (Jsc) of 3.1 × 10⁻¹ mA/cm² after annealing at 348 K. These results highlight the crucial role of post-deposition thermal tuning in reducing recombination centers and enhancing the overall efficiency of chalcogenide-based solar harvesting devices.

Page 7 of 7 | Total Record : 64

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