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Mutual Coupling Reduction between Asymmetric Reflectarray Resonant Elements M. Hashim Dahri; M. H. Jamaluddin; M. Inam; M. R. Kamarudin
International Journal of Electrical and Computer Engineering (IJECE) Vol 8, No 3: June 2018
Publisher : Institute of Advanced Engineering and Science

A physically asymmetric reflectarray element has been proposed for wide band operations. The dual resonant response has been introduced by tilting one side of the square path element. The numerical results have been analyzed in the frequency band between 24GHz to 28GHz where a reflection phase range of more than 600° has been achieved. The proposed asymmetric element can produce mutual coupling with adjacent elements on a reflectarray. This effect has been monitored by placing the elements in a mirror configuration on the surface of reflectarray. The single unit cell element results have been compared with conventional 4 element unit cell and proposed mirroring element configuration. The proposed mirroring element technique can be used to design a broadband reflectarray for high gain applications.

Gain enhancement of dielectric resonator antenna for millimeter wave applications Irfan Ali; Mohd Haizal Jamaluddin; M. R. Kamarudin; Abinash Gaya; M. H. Dahri
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 17, No 4: August 2019
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v17i4.12770

In this paper, dielectric resonator antenna (DRA) with enhanced gain operating on the higher order mode (????????????15???? ) is presented. The dielectric resonator antenna with dielectric constant ???????? of 10 and loss tangent of 0.002 is used. The DRA is fed by microstrip line through an aperture slot. The proposed antenna is designed at 26 GHz and achieved a gain of 7.9 dBi with corresponding simulated radiation efficiency of 93%. The impedance bandwidth of 1.5 GHz from 25.1 GHz to 26.6 GHz has been achieved. The reflection coefficient, antenna gain, radiation patterns, and efficiency of the antenna are studied. Simulations are performed using CST microwave studio, and their results are presented.

A wideband dielectric resonator antenna with a cross slot aperture for 5G communications Abinash Gaya; Mohd Haizal Jamaluddin; M. R. Kamarudin; Irfan Ali
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 17, No 5: October 2019
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v17i5.12801

This paper represents design of a wideband Rectangular Dielectric Resonator antenna fed by an aperture coupled technique. A bandwidth of 2.2 GHz has been achieved using a cross slot aperture in a ground plane for Dielectric Resonator Antenna (DRA). The simulated gain value achieved is 6.5dBi. The Rectangular Dielectric Resonator which has been designed in this paper can be used in 5G application frequency band of 24.25-27.5 GHz. The calculated percentage bandwidth is 15.38 %. An optimization of slot dimensions has also mentioned which can help to select a desired impedance match. The measured gain and bandwidth are efficient to use this design for various 5G applications. This unit cell wideband DRA can be used for millimeter wave frequencies of 5G.

Wideband and high gain dielectric resonator antenna for 5G applications Irfan Ali; Mohd Haizal Jamaluddin; M. R. Kamarudin; Abinash Gaya; R. Selvaraju
Bulletin of Electrical Engineering and Informatics Vol 8, No 3: September 2019
Publisher : Institute of Advanced Engineering and Science

In this paper, wideband high gain dielectric resonator antenna for 5G applications is presented. Higher order mode is exploited to enhance the antenna gain, while the array of symmetrical cylindrical shaped holes drilled in the DRA to improves the bandwidth by reducing the quality factor. The proposed DRA is designed using dielectric material with relative permittivity of 10 and loss tangent of 0. 002.The Rogers RT/Droid 5880 has been selected as substrate with relative permittivity of 2.2, loss tangent of 0.0009- and 0.254-mm thickness. The simulated results show that, the proposed geometry has achieved a wide impedance bandwidth of 17.3% (23.8-28.3GHz=4.5 GHz) for S11 less than -10 dB, and a maximum gain of about 9.3 dBi with radiation efficiency of 96% at design frequency of 26 GHz. The DRA is feed by microstrip transmission line with slot aperture. The reflection coefficient, the radiation pattern, and the antenna gain are studied by full-wave EM simulator CST Microwave Studio. The proposed antenna can be used for the 5G communication applications such as device to device communication (D2D).

Wideband and high gain dielectric resonator antenna for 5G applications Irfan Ali; Mohd Haizal Jamaluddin; M. R. Kamarudin; Abinash Gaya; R. Selvaraju
Bulletin of Electrical Engineering and Informatics Vol 8, No 3: September 2019
Publisher : Institute of Advanced Engineering and Science

In this paper, wideband high gain dielectric resonator antenna for 5G applications is presented. Higher order mode is exploited to enhance the antenna gain, while the array of symmetrical cylindrical shaped holes drilled in the DRA to improves the bandwidth by reducing the quality factor. The proposed DRA is designed using dielectric material with relative permittivity of 10 and loss tangent of 0. 002.The Rogers RT/Droid 5880 has been selected as substrate with relative permittivity of 2.2, loss tangent of 0.0009- and 0.254-mm thickness. The simulated results show that, the proposed geometry has achieved a wide impedance bandwidth of 17.3% (23.8-28.3GHz=4.5 GHz) for S11<-10 dB, and a maximum gain of about 9.3 dBi with radiation efficiency of 96% at design frequency of 26 GHz. The DRA is feed by microstrip transmission line with slot aperture. The reflection coefficient, the radiation pattern, and the antenna gain are studied by full-wave EM simulator CST Microwave Studio. The proposed antenna can be used for the 5G communication applications such as device to device communication (D2D).

Wideband and high gain dielectric resonator antenna for 5G applications Irfan Ali; Mohd Haizal Jamaluddin; M. R. Kamarudin; Abinash Gaya; R. Selvaraju
Bulletin of Electrical Engineering and Informatics Vol 8, No 3: September 2019
Publisher : Institute of Advanced Engineering and Science

In this paper, wideband high gain dielectric resonator antenna for 5G applications is presented. Higher order mode is exploited to enhance the antenna gain, while the array of symmetrical cylindrical shaped holes drilled in the DRA to improves the bandwidth by reducing the quality factor. The proposed DRA is designed using dielectric material with relative permittivity of 10 and loss tangent of 0. 002.The Rogers RT/Droid 5880 has been selected as substrate with relative permittivity of 2.2, loss tangent of 0.0009- and 0.254-mm thickness. The simulated results show that, the proposed geometry has achieved a wide impedance bandwidth of 17.3% (23.8-28.3GHz=4.5 GHz) for S11<-10 dB, and a maximum gain of about 9.3 dBi with radiation efficiency of 96% at design frequency of 26 GHz. The DRA is feed by microstrip transmission line with slot aperture. The reflection coefficient, the radiation pattern, and the antenna gain are studied by full-wave EM simulator CST Microwave Studio. The proposed antenna can be used for the 5G communication applications such as device to device communication (D2D).

A compact high-gain parasitic patch antenna with electronic beam-switching D. Subramaniam; M. Jusoh; T. Sabapathy; M. N. Osman; M. R. Kamarudin; R. R. Othman; M. R. Awal
Indonesian Journal of Electrical Engineering and Computer Science Vol 13, No 2: February 2019
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v13.i2.pp551-555

A high beam steering antenna using HPND PIN Diode is proposed with a capability of steering its beam into three different directions -40 º, 0º and 40 º with respective switching condition. The reconfigurable parasitic antenna consists of a driven element and two reconfigurable parasitic elements, is designed with operating range of 9.5GHz. The parasitic elements act as reflectors or director depending on the switching conditions. Both parasitic elements are connected to ground plane via shorting pins. The reconfiguration is controlled by the two HPND PIN Diode switch that embeds to the parasitic element. An average gain value of 8dBi is achieved at all reconfiguration scenarios. All the simulated design has been carried out using CST software.

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