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Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation M. Azim Khairi; Rosminazuin Ab. Rahim; Norazlina Saidin; Yusof Abdullah; Nurul Fadzlin Hasbullah
Bulletin of Electrical Engineering and Informatics Vol 8, No 2: June 2019
Publisher : Institute of Advanced Engineering and Science

This paper investigates on the reaction of 10 and 15MGy, 3MeV electron irradiation upon off-the-shelves (commercial) Silicon Carbide Schottky diodes from Infineon Technologies (model: IDH08SG60C) and STMicroelectronics (model: STPSC806). Such irradiation reduces the forward-bias current. The reduction is mainly due to the significant increase of the series resistance (i.e. Infineon: 1.45Ω at before irradiation → 121×103 Ω at 15MGy); STMicroelectronics: 1.44Ω at before irradiation → 2.1×109 Ω at 15MGy). This increase in series resistance gives 4.6 and 8.2 orders of magnitude reduction for the forward-bias current density of Infineon and STMicroelectronics respectively. It is also observed that the ideality factor and the saturation current of the diodes increases with increasing dose (i.e. ideality factor- Infineon: 1.01 at before irradiation → 1.05 at 15MGy; STMicroelectronics: 1.02 at before irradiation → 1.3 at 15MGy | saturation current- Infineon: 1.6×10-17A at before irradiation → 2.5×10-17A at 15MGy; STMicroelectronics: 2.4×10-15A at before irradiation → 8×10-15A at 15MGy). Reverse-bias leakage current density in model by Infineon increases by one order of magnitude after 15MGy irradiation, however, in model by STMicroelectronics decreases by one order of magnitude. Overall, for these particular samples studied, Infineon devices have shown to be better in quality and more radiation resistance toward electron irradiation in forward-bias operation while STMicroelectronics exhibit better characteristics in reverse-bias operation.

Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation M. Azim Khairi; Rosminazuin Ab. Rahim; Norazlina Saidin; Yusof Abdullah; Nurul Fadzlin Hasbullah
Bulletin of Electrical Engineering and Informatics Vol 8, No 2: June 2019
Publisher : Institute of Advanced Engineering and Science

This paper investigates on the reaction of 10 and 15MGy, 3MeV electron irradiation upon off-the-shelves (commercial) Silicon Carbide Schottky diodes from Infineon Technologies (model: IDH08SG60C) and STMicroelectronics (model: STPSC806). Such irradiation reduces the forward-bias current. The reduction is mainly due to the significant increase of the series resistance (i.e. Infineon: 1.45Ω at before irradiation → 121×103 Ω at 15MGy); STMicroelectronics: 1.44Ω at before irradiation → 2.1×109 Ω at 15MGy). This increase in series resistance gives 4.6 and 8.2 orders of magnitude reduction for the forward-bias current density of Infineon and STMicroelectronics respectively. It is also observed that the ideality factor and the saturation current of the diodes increases with increasing dose (i.e. ideality factor- Infineon: 1.01 at before irradiation → 1.05 at 15MGy; STMicroelectronics: 1.02 at before irradiation → 1.3 at 15MGy | saturation current- Infineon: 1.6×10-17A at before irradiation → 2.5×10-17A at 15MGy; STMicroelectronics: 2.4×10-15A at before irradiation → 8×10-15A at 15MGy). Reverse-bias leakage current density in model by Infineon increases by one order of magnitude after 15MGy irradiation, however, in model by STMicroelectronics decreases by one order of magnitude. Overall, for these particular samples studied, Infineon devices have shown to be better in quality and more radiation resistance toward electron irradiation in forward-bias operation while STMicroelectronics exhibit better characteristics in reverse-bias operation.

Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation M. Azim Khairi; Rosminazuin Ab. Rahim; Norazlina Saidin; Yusof Abdullah; Nurul Fadzlin Hasbullah
Bulletin of Electrical Engineering and Informatics Vol 8, No 2: June 2019
Publisher : Institute of Advanced Engineering and Science

This paper investigates on the reaction of 10 and 15MGy, 3MeV electron irradiation upon off-the-shelves (commercial) Silicon Carbide Schottky diodes from Infineon Technologies (model: IDH08SG60C) and STMicroelectronics (model: STPSC806). Such irradiation reduces the forward-bias current. The reduction is mainly due to the significant increase of the series resistance (i.e. Infineon: 1.45Ω at before irradiation → 121×103 Ω at 15MGy); STMicroelectronics: 1.44Ω at before irradiation → 2.1×109 Ω at 15MGy). This increase in series resistance gives 4.6 and 8.2 orders of magnitude reduction for the forward-bias current density of Infineon and STMicroelectronics respectively. It is also observed that the ideality factor and the saturation current of the diodes increases with increasing dose (i.e. ideality factor- Infineon: 1.01 at before irradiation → 1.05 at 15MGy; STMicroelectronics: 1.02 at before irradiation → 1.3 at 15MGy | saturation current- Infineon: 1.6×10-17A at before irradiation → 2.5×10-17A at 15MGy; STMicroelectronics: 2.4×10-15A at before irradiation → 8×10-15A at 15MGy). Reverse-bias leakage current density in model by Infineon increases by one order of magnitude after 15MGy irradiation, however, in model by STMicroelectronics decreases by one order of magnitude. Overall, for these particular samples studied, Infineon devices have shown to be better in quality and more radiation resistance toward electron irradiation in forward-bias operation while STMicroelectronics exhibit better characteristics in reverse-bias operation.

Verification of Quartz Crystal Microbalance Array using Vector Network Analyzer and OpenQCM Ahmad Anwar Zainuddin; Anis Nurashikin Nordin; Rosminazuin Ab. Rahim; Aliza Aini Md. Ralib; Sheroz Khan; Cyril Guines; Matthieu Chatras; Arnaud Pothier
Indonesian Journal of Electrical Engineering and Computer Science Vol 10, No 1: April 2018
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v10.i1.pp84-93

Quartz Crystal Microbalance (QCM) is a device that allows non-destructive measurements of r in situ reaction activities. In this article, an array comprising of six 3MHz QCM sensors in an array were characterized using a vector network analyzer and OpenQCM, a portable measuring instrument that measures change in resonance frequency. Measurements of S21 transmission characteristics using the vector network analyzer provides the resonance frequency and can also be used to derive the RLC equivalent electrical circuit values of a resonant two-port network based on the Butterworth-Van Dyke model. In this work, Rm, Lm, Cm and Co were obtained via curve-fitting of the measurement results to the simulated results. Measurements were done in triplicates to verify reproducibility for all 6 sensors. For comparison, measurements were also done using a portable, open-source instrument, OpenQCM. The OpenQCM instrument directly measures changes in resonance frequencies, making it ideal for biosensing experiments, which correlate changes in mass with changes in resonance frequencies. Comparison between resonance frequency measurements using VNA and OpenQCM exhibit low percentage difference 0.2%. This QCM sensor array has the potential of conducting real-time, point-of-care analyses for detection of biological molecules.

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