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Study of Plastic Making on Polyblend Methylacrylate-Starch Istiroyah Istiroyah; Lailatin Nuriyah; N. Ardian P
Natural B, Journal of Health and Environmental Sciences Vol 1, No 2 (2011)
Publisher : Natural B, Journal of Health and Environmental Sciences

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (9.486 KB) | DOI: 10.21776/ub.natural-b.2011.001.02.12

Abstract

The aims of the research were to make biodegradable plastics starch-methyl acrylate. FTIR spectra showed that polymerization of 100 grams of starch with 2 L of water at 95ºC and added by 150 grams of methyl acrylate at 40-45ºC with ceric ammonium nitrate as catalyst, produced polyblend plastics. Tensile strength of plastics depends on starch type. Biodegradable plastics with starch that have high amylase concentration showed high tensile strength. Plastic sweet potato starch had maximum tensil strength at 18.6±4.4 Mpa while maximum elongation at bread was at 25.33±6.29% from plastic madeform corn strach.
Nitrogenation of Amorphous Silicon : Reactive Molecular Dynamics Simulations Mauludi Ariesto Pamungkas; Choirun Nisa; Istiroyah Istiroyah; Abdurrouf Abdurrouf
The Journal of Pure and Applied Chemistry Research Vol 8, No 3 (2019): Edition September-December 2019
Publisher : Chemistry Department, The University of Brawijaya

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.21776/ub.jpacr.2019.008.03.487

Abstract

Since silicon nitride (SiNx) film is more stable than SiO2, silicon nitride, thus it is widely used in semiconductor industry as an insulatorlayer. The study of nitrogenation process of a-Si was performed using molecular dynamics simulations to determine the properties of the bonds created in the structure of a-SiNx. Reactive force field (Reaxff) was used as potential in this molecular dynamic simulation owing to its ability to describe charge transfer as well as breaking and formation of atomic bonds. The structure of a-Si is obtained by melting the crystalline silicon at temperature of 3500 K followed by quenching to room temperature. The nitrogenation process was carried out by randomly distributing 900 N atoms over the a-Si surface for 60 ps at temperature varied from 300 K, 600 K, 900 K, and 1200 K. The higher the temperature nitrogenation applied in the system, the more number of N atoms adsorbed, resulting in a deeper penetration depth of Nitrogen atom. Amorphization and nitrogenation changed the distribution of coordination number of Ni, Si, and O atoms. Transfer of electrons from silicon to nitrogen occurs only in the nearest nitrogen atom with silicon atom.