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All Journal BERKALA FISIKA JURNAL FISIKA Jurnal Matematika & Sains Journal of Mathematical and Fundamental Sciences JFA (Jurnal Fisika dan Aplikasinya) Indonesian Journal of Physics (IJP)
Euis Sustini
Institut Teknologi Bandung
Astronomy Chemistry Computer Science & IT Earth & Planetary Sciences Electrical & Electronics Engineering Energy Engineering Mathematics Physics

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Studi Pengaruh Rasio V/III terhadap Morfologi Permukaan Film Tipis GaSb yang Lilik Hasanah; Euis Sustini; Sukirno Sukirno; Maman Budiman
Jurnal Matematika & Sains Vol 8, No 3 (2003)
Publisher : Institut Teknologi Bandung

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Abstract

Gallium Antimony (GaSb) thin film were grown on Semi Insulating (SI) GaAs (100) substrate by MOCVD (Metal-Organic Chemical Vapor Deposition) method. TMGa (trimethylgallium) and TDMASb (tridismethylaminoantimony) were used as precursors of group III and V, respectively, with H2 as gas carrier. The films were grown with V/III varied between 1,15 and 3,1. V/III ratio dependent of surface morphplogy and atomic composition of GaSb thin films were studied. The best surface morphology stoichiometric GaSb obtained at the V/II ratio of 2.0.
Studi Sifat Termal Prekursor In(TMHD)3 untuk Menumbuhkan Lapisan Tipis In2O3 dengan Teknik MOCVD Horasdia Saragih; Hasniah Aliah; Euis Sustini; Sukirno Sukirno
Jurnal Matematika & Sains Vol 14, No 4 (2009)
Publisher : Institut Teknologi Bandung

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The In2O3 thin films have been deposited on quartz substrate by MOCVD technique using In(TMHD)3 as a metal organic precurcor. Thermal properties of In(TMHD)3 have been investigated by analyses of TG-DTA curve and FTIR spectrum to determine the value of In2O3 deposition parameters. Based on TG-DTA curve and FTIR spectrum analyses, we find that: (1) melting point of In(TMHD)3 powder is 175 °C; (2) In(TMHD)3 powder starts to evaporate at 184 °C; (3) partial oxidation of In(TMHD)3 in Ar/atmosfer accur at 260 °C; and (4) dissosiation of TMHD ligand from indium metal element happened in the temperature range of 300 °C - 400 °C. Following these results, we maintaned growth condition for deposition of In2O3: the temperature of In(TMHD)3 bubbler (Tb) = 200 °C; the pressure of In(TMHD)3 bubbler (Pb) = 260 Torr; the rate of argon gas flow to carry out the vapor of In(TMHD)3 = 50 sccm; the rate of oxygen gas = 50 sccm; and temperature of substrate = 300 °C. In 120 minutes, the thickness of deposited In2O3 thin films, the rate of deposition and the roughness of film surface are about 0.2 µm, 1.6x10-3 µm/menit and 70 nm, respectively.
Sifat Optik Lapisan Tipis In2O3 yang Ditumbuhkan dengan Metode MOCVD Horasdia Saragih; Hasniah Aliah; Euis Sustini; Albert Manggading Hutapea
Jurnal Matematika & Sains Vol 15, No 2 (2010)
Publisher : Institut Teknologi Bandung

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The In2O3 thin films have been deposited on glass substrate by MOCVD method using In(TMHD)3 metal organic precursor. The growth parameters, such as bubbler temperature 200oC, bubbler pressure 260 Torr, substrate temperature 300oC, flow rate of Ar gas 50 sccm, flow rate of O2 gas 50 sccm, chamber pressure 2x10-3 Torr, and duration of growth from 120 to 180 minutes were used. Three In2O3 thin films with different thicknesses, i.e. 531, 434, and 404 nm were resulted. Optical transmissions of the thin films in the visible wavelength were above of 80%, and not significantly influenced by thickness difference up to about of 127 nm. The optical band gap and Urbach energy band of thin films were 3,76-3,80 eV and 0,20-0,22, respectively. The thin films deposited have indirect forbidden transition.
Fabrikasi Transparant Conducting Film Berbahan Dasar Grafit pada Substrat Plastik dengan Proses Mekanik Rahman, Dui Yanto; Sustini, Euis; Abdullah, Mikrajuddin
Jurnal Matematika dan Sains Vol 22 No 1 (2017)
Publisher : Institut Teknologi Bandung

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Transparent Conducting Film (TCF) employing graphite powder as conducting material has been successfully fabricated by using extremely cheap and simple method.  This method doesn’t use heating and transfer process which is commonly used in fabrication of Transparent Conducting Film. Graphite powder was directly deposited on the surface of plastic using circle motion of tube shaped-metal which its surface was covered with thick tissue. The film thickness was varied to investigate the influence of it to the transmittance and resistance of the film. The transmittance and resistance measurement was carried out under UV-Vis electrometer and I-V El-Kahfi equipment assistance, and finally the transmittance of 60% and resistance of 24,4 kΩ was gained for one time of coating, While 9 times of coating produced 13% of transmittance and 773 Ω of resistance.
Studi Sifat Termal Prekursor In(TMHD)3 Untuk Menumbuhkan Lapisan Tipis In2O3 dengan Teknik MOCVD Saragih, Horasdia; Hasniah, Hasniah; Sustini, Euis; Sukirno, Sukirno
BERKALA FISIKA Vol 13, No 1 (2010): Berkala Fisika
Publisher : BERKALA FISIKA

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Abstract

The In2O3 thin films have been deposited on quartz substrate by MOCVD technique using In(TMHD)3 as a metal organic precurcor. Thermal properties of In(TMHD)3 material have been investigated by analyses of TG-DTA curve and FTIR spectrum to determine the value of In2O3 deposition parameters. Based on TG-DTA curve and FTIR spectrum analyses, we find that: (1) melting point of In(TMHD)3 powder is 175oC; (2) In(TMHD)3 powder starts to evaporate at 184oC; (3) partial oxidation of In(TMHD)3 in Ar/atmosfer accur at 260oC; and (4) dissosiation of TMHD ligand from indium metal element happened in the temperature range 300oC – 400oC. According to these results, we maintaned growth condition for deposition of In2O3: the temperature of In(TMHD)3 bubbler (Tb) = 200oC; the pressure of In(TMHD)3 bubbler (Pb) = 260 Torr; the rate of argon gas flow to carried out the vapor of In(TMHD)3 = 50 sccm; the rate of oxygen gas = 50 sccm; and temperature of substrate = 300oC. In 120 minutes, the thickness of deposited In2O3 thin films, the rate of deposition, and the roughness of film surface are about 0.2 µm, 1.6x10-3 µm/menit and 70 nm, respectively.   Keywords: In(TMHD)3 precursor, In­2O3, thin films, thermal properties, MOCVD.
Pengaruh Luas Kontak pada Kualitas MSM pGaSb Euis Sustini; Hery Saeful Azis; Heri Sutanto; Agus Subagyo
Jurnal Fisika dan Aplikasinya Vol 2, No 2 (2006)
Publisher : Lembaga Penelitian dan Pengabdian Kepada Masyarakat, LPPM-ITS

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (127.641 KB) | DOI: 10.12962/j24604682.v2i2.987

Abstract

Dalam tulisan ini film tipis semikonduktor GaSb telah ditumbuhkan dengan metoda MOCVD vertikal pada tekanan 50 torr di atas subtsrat SI GaAs(100). Film mempunyai type p dengan permukaan yang cukup homogen serta orientasi film didominasi (200). Film yang ditumbuhkan pada temperatur 520 oC dengan rasio V/III=1 mempunyai mobilitas 68,57 cm2/Vs dan konsentrasi 1,9 x 1018 cm−3. Metal Semikonduktor Metal (MSM) Al-pGaSb telah dibuat menggunakan dua metoda, yaitu metoda sederhana evaporasi dengan luas kontak 0,02 cm2 dan metoda UV litografi dengan luas kontak 0,009 cm2. MSM bersifat ohmik kontak dengan resistansi spesifik Rc menurun terhadap luas kontak yang digunakan.
A Study of Quantum dots of GaSb M. Barmawi; Sugianto Sugianto; R.A. Sani; Euis Sustini; P. Arifin; M. Budiman
Journal of Mathematical and Fundamental Sciences Vol. 33 No. 1 (2001)
Publisher : Institute for Research and Community Services (LPPM) ITB

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Abstract. Quantum Dots is a nano structured materials, which is an interesting object for fundamental study as well as for applications. Quantum Dots has been used for optoelectronic devices, such as fast detectors and for lasers. In this paper we report preliminary results of the preparation of quantum dots of GaSb in our laboratory. These dots are prepared by self-organized growth by MOCVD, using Trymethylgalium and Tridismethylaminoantimonat  as metal organic sources and using GaAs as substrate. The results are studied by Scanning Electron Microscope. We propose further characterization of these quantum dots. Studi Mengenai Titik Kuantum GaSbSari. Quantum Dot adalah material yang mempunyai struktur nano, yang merupakan objek untuk penelitian fundamental maupun untuk penerapannya. Dalam makalah ini dilaporakan hasil-hasil yang pertama yang kita peroleh dalam pembuatan Quantum Dot dari GaSb dalam laboratorium kami. Quantum Dot ini telah ditumbuhkan dengan menggunakan penumbuhan yang "selforganized" dengan reactor MOCVD dengan mempergunakan Trimetilgalium dan Trisdismetilantimonat sebagai sumber-sumber metalorganic dan GaAs digunakan sebagai substrat. Hasilnya ditelaah dengan menggunakan SEM. Telat disarankan karakterisasi lanjutan yang harus dilakukan. 
Kajian Struktur Serat dan Porositas Masker Udara Handika Dany Rahmayanti; Rahmawati Rahmawati; Euis Sustini; Mikrajuddin Abdullah
Jurnal Fisika Vol 8, No 1 (2018)
Publisher : Universitas Negeri Semarang

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.15294/jf.v8i1.13966

Abstract

There are 6 brands of air masks on the market that are Evo med, Nexcare carbon, Nexcare daily, Indomaret, Borma and Evo club. All masks on the market have 3 layers. Based on the results of microscopy testing showed that the fiber diameter image of all mask brands in layer 2 is smaller than layer 1 and 3. Generally, all brands of masks show a uniform fiber size distribution. From the surface porosity measurements, Borma masks have a larger porosity than other masks in layers 1, 2 and 3 ie 60.64%, respectively; 42.95% and 63.58%. The results show that the difference in mask price in the market does not show the quality standards of different mask filters. Furthermore, the results of this study may contribute to the development of research on masks.
Studi Struktur Kristal Film Tipis Galliumantimony yang Ditumbuhkan dengan MOCVD Reaktor Vertikal Zulirfan Zulirfan; Euis Sustini; Maman Budiman
Indonesian Journal of Physics Vol 12 No 4 (2001): Vol. 12 No.4, Oktober 2001
Publisher : Institut Teknologi Bandung

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Abstract

GaSb thin films have been grown by using vertical reactor MOCVD on (100) SI-GaAs substrates. TMGa and TDMASb were used as a precursor of group III and V respectively, with H2 as gas carrier. Films were grown at the growth temperatures 5200C and 540 oC as a function of V/III ratio. The range of V/III ratio were 0,4 - 3,1. The ex-situ characterization, XRD and SEM were used to examine the crystal structure and the morphology of the films, respectively. EDS characterization were used to find the composition of Ga and Sb atoms in the films. The increased of V/III ratio were found to have a significant effect on the both properties. Film grown at the lowest V/III ratio (0,4) shows a polycrystal structure with several peaks of GaSb crystal’s orientation, and bad surface morphology. Films grown at V/III ratio ranged about 1.0 to 3.1 show the same crystal’s orientation of GaSb, of (200) and (400). The better surface morphology were found at the growth temperature 540 oC with V/III ratio 2,0.
Damped Zigzag Upward Motion of a Ball in Fluid: a Numerical Model Muhammad Nur Tajuddin; Novitrianc Novitrianc; Sparisoma Viridi; Euis Sustini; Veinardi Suendo
Indonesian Journal of Physics Vol 20 No 1 (2009): Vol. 20 No. 1, January 2009
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (238.668 KB) | DOI: 10.5614/itb.ijp.2009.20.1.5

Abstract

Several types of upward motion of a ball in a cylinder filled with water are observed in experiment such as straight, damped zigzag, and zigzag upward motion. Center of mass of the balls and the way the balls are released play important role to determine the type of occuring upward motion. A simple theoretical model regarding only gravitational force, Stokes drag force, and Archimedes bouyancy force, where the work points of these forces are not coincident, are developed and used to explain the damped zigzag motion.
Co-Authors Agus Subagyo Albert Manggading Hutapea Hasniah Aliah Heri Sutanto Hery Saeful Azis Horasdia Saragih Lilik Hasanah M. Barmawi M. Budiman Maman Budiman Mikrajuddin Abdullah Muhammad Nur Tajuddin Munir, Rahmawati Novitrianc Novitrianc P. Arifin R.A. Sani Rahman, Dui Yanto Rahmawati Munir Rahmawati Rahmawati Rahmawati, Rahmawati Rahmayanti, Handika Dany RR. Ella Evrita Hestiandari Sparisoma Viridi Sugianto Sugianto Sukirno Sukirno Sukirno Sukirno Veinardi Suendo Zulirfan Zulirfan