By employing Density Functional Theory (DFT) calculations, the electronic and thermoelectric properties of 2D silicon bismuth (SiBi) materials were analyzed. The 2D SiBi structure was identified as a semiconductor with a bandgap of approximately 0.67 eV. Using Boltzmann transport equations for thermoelectric characterization, we determined that 2D SiBi exhibited significant Seebeck coefficients, reaching values of 1243.79 and 1217.23 µV/K for p-type and n-type doping, respectively. Notably, subjecting the material to a biaxial compressive strain of -1% under ambient conditions results in a considerable enhancement in the Seebeck coefficients, reaching 1361.75 and 1371.85 µV/K for p-type and n-type doping, respectively. These observations indicate that the strategic application of mechanical strain provides a practical pathway for improving the thermoelectric efficiency of 2D SiBi, thereby demonstrating its potential for integration into advanced thermoelectric devices.