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Journal : Journal of Energy, Material, and Instrumentation Technology

The Effect of Biaxial Strain on The Thermoelectric Properties of 2D SiBi Anshory, Muhammad; Y. Hanna, Muhammad
Journal of Energy, Material, and Instrumentation Technology Vol 6 No 2 (2025): Journal of Energy, Material, and Instrumentation Technology
Publisher : Departement of Physics, Faculty of Mathematics and Natural Sciences, University of Lampung

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.23960/jemit.v6i2.296

Abstract

By employing Density Functional Theory (DFT) calculations, the electronic and thermoelectric properties of 2D silicon bismuth (SiBi) materials were analyzed. The 2D SiBi structure was identified as a semiconductor with a bandgap of approximately 0.67 eV. Using Boltzmann transport equations for thermoelectric characterization, we determined that 2D SiBi exhibited significant Seebeck coefficients, reaching values of 1243.79 and 1217.23 µV/K for p-type and n-type doping, respectively. Notably, subjecting the material to a biaxial compressive strain of -1% under ambient conditions results in a considerable enhancement in the Seebeck coefficients, reaching 1361.75 and 1371.85 µV/K for p-type and n-type doping, respectively. These observations indicate that the strategic application of mechanical strain provides a practical pathway for improving the thermoelectric efficiency of 2D SiBi, thereby demonstrating its potential for integration into advanced thermoelectric devices.