Article Per Year (5 Year)
p-Index From 2020 - 2025
0.882
P-Index
This Author published in this journals
All Journal POSITRON PRISMA FISIKA Jurnal Fisika FLUX Jurnal Fisika dan Terapannya Indonesian Journal of Electrical Engineering and Computer Science Indonesian Journal of Physics (IJP)
Fatimah Arofiati Noor
Institut Teknologi Bandung
Astronomy Computer Science & IT Earth & Planetary Sciences Education Electrical & Electronics Engineering Energy Engineering Materials Science & Nanotechnology Physics Other

Published : 8 Documents Claim Missing Document
Claim Missing Document
Check
Articles

Found 8 Documents
Search

 1 
EFEK SUMBER KARBON PADA PROPERTI LUMINESENSI BCNO YANG DISINTESIS DENGAN METODE PEMANASAN GELOMBANG MIKRO Ramdani, Feri; Faryuni, Irfana Diah; Muid, Abdul; Sampurno, Joko; Nuryadin, Bebeh Wahid; Noor, Fatimah Arofiati
Jurnal Fisika FLUX Vol 13, No 2 (2016): Jurnal Fisika FLUX Edisi Agustus 2016
Publisher : Lambung Mangkurat University Press

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.20527/flux.v13i2.3011

Abstract

ABSTRACT- A BCNO phosphor was successfully synthesized using a microwave method and atmospheric pressure. The phosphors were prepared from precursors containing boric acid as a boron source, urea as a nitrogen source and poly ethylene glycol (PEG) as a carbon source. The carbon sources were varied by PEG MW 1000, MW 6000 and MW 20000.  The objective of this research is to study the effect of variations in the carbon source to the luminescence properties of BCNO that synthesized using microwave. The emission wavelength of the samples are in violet area (380-450 nm) and the highest emission intensity was 47 a.u. produced by BCNO which using PEG MW 20000 as the carbon source.
EFEK SUMBER KARBON PADA PROPERTI LUMINESENSI BCNO YANG DISINTESIS DENGAN METODE PEMANASAN GELOMBANG MIKRO Feri Ramdani; Irfana Diah Faryuni; Abdul Muid; Joko Sampurno; Bebeh Wahid Nuryadin; Fatimah Arofiati Noor
Jurnal Fisika FLUX Vol 13, No 2 (2016): Jurnal Fisika FLUX Edisi Agustus 2016
Publisher : Lambung Mangkurat University Press

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (216.873 KB) | DOI: 10.20527/flux.v13i2.3011

Abstract

ABSTRACT- A BCNO phosphor was successfully synthesized using a microwave method and atmospheric pressure. The phosphors were prepared from precursors containing boric acid as a boron source, urea as a nitrogen source and poly ethylene glycol (PEG) as a carbon source. The carbon sources were varied by PEG MW 1000, MW 6000 and MW 20000.  The objective of this research is to study the effect of variations in the carbon source to the luminescence properties of BCNO that synthesized using microwave. The emission wavelength of the samples are in violet area (380-450 nm) and the highest emission intensity was 47 a.u. produced by BCNO which using PEG MW 20000 as the carbon source.
Numerical Simulation of Tunneling Current in an Anisotropic Metal-Oxide-Semiconductor Capacitor Fatimah Arofiati Noor; Ferry Iskandar; Mikrajuddin Abdullah; Khairurrijal khairurrijal
Indonesian Journal of Electrical Engineering and Computer Science Vol 10, No 3: July 2012
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

In this paper, we have developed a model of the tunneling currents through a high-k dielectric stack in MOS capacitors with anisotropic masses. The transmittance was numerically calculated by employing a transfer matrix method and including longitudinal-transverse kinetic energy coupling which is represented by an electron phase velocity in the gate. The transmittance was then applied to calculate tunneling currents in TiN/HfSiOxN/SiO2/p-Si MOS capacitors. The calculated results show that as the gate electron velocity increases, the transmittance decreases and therefore the tunneling current reduces. The tunneling current becomes lower as the effective oxide thickness (EOT) of HfSiOxN layer increases. When the incident electron passed through the barriers in the normal incident to the interface, the electron tunneling process becomes easier. It was also shown that the tunneling current was independent of the substrate orientation. Moreover, the model could be used in designing high speed MOS devices with low tunneling currents. DOI: http://dx.doi.org/10.11591/telkomnika.v10i3.607
Effect of Dimensionality on The Electronic Properties of SnSe: A Density Functional Theory Study Fatimah Arofiati Noor; Erik Bhekti Yutomo; Toto Winata
Indonesian Journal of Physics Vol 32 No 2 (2021): Vol 32 No 2 (2021)
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (609.315 KB) | DOI: 10.5614/itb.ijp.2021.32.2.2

Abstract

This study investigated the structural and electronic properties of bulk, bilayer, and monolayer SnSe using the density functional theory (DFT) method. We succeeded in calculating the bandgap and identifying accurately the transformation of the band structure from bulk to monolayer systems using generalized gradient approximation. An increase in the lattice parameter a and a decrease in the lattice parameter b were observed when the bulk dimensions were reduced to a monolayer. The reduction of van der Waals interactions when the dimensions of a system are reduced is the main factor that causes changes in lattice parameters. The indirect bandgap of bulk SnSe (0.56 eV, 0.3∆→0.7Σ) becomes wider in the monolayer system (0.94 eV, 0.2∆→0.8Σ). Bandgap widening is predicted due to the emergence of the quantum confinement effect in low-dimensional systems. Furthermore, we found the formation of a quasi-degenerate minimum conduction band in the monolayer SnSe. With the formation of these bands, we predict the monolayer SnSe will have better thermoelectric properties than the bulk or bilayer system. This study provides an in-depth understanding of the electronic structure of SnSe and its correlation to thermoelectric properties.
The Effect of Niobium and Rubidium Doping on the Energy Band Gap of a Lithium Tantalate (LiTaO3) Thin Film Agus Ismangil; Fatimah Arofiati Noor; Toto Winata
Indonesian Journal of Physics Vol 32 No 2 (2021): Vol 32 No 2 (2021)
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (420.255 KB) | DOI: 10.5614/itb.ijp.2021.32.2.1

Abstract

Chemical solution deposition (CSD) is a technique for making a film by keeping synthetic arrangements on the outer layer of the substrate. The outcomes show that the band gap energy of the LiTaO3 film is 1 eV. Electrons are more effectively invigorated to the valence band than to the conduction band on the grounds that the energy required is not excessively huge. Niobium-doped LiTaO3 film has a band gap energy of 1.15 eV. A large amount of energy is needed for electrons to be energized from the valence band to the conduction band. The rubidium-doped LiTaO3 film has a band gap energy of 1.30 eV.
Studi Elektrostatik Elektroda Runcing dan Aplikasinya pada Perangkat Floating Gate Memory Fatimah Arofiati Noor; Gilang Mardian Kartiwa; Muhammad Amin Sulthoni
POSITRON Vol 11, No 1 (2021): Vol. 11 No. 1 Edition
Publisher : Fakultas Matematika dan Ilmu Pengetahuan Alam, Univetsitas Tanjungpura

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (599.244 KB) | DOI: 10.26418/positron.v11i1.44881

Abstract

Pada penelitian ini, potensial elektrostatik dari struktur floating gate runcing dalam sel memori split gate dipelajari secara analitik dan numerik. Penelitian ini bertujuan memberikan pendekatan sederhana untuk mempelajari diagram pita energi pada perangkat memori. Diagram energi yang dihasilkan dapat digunakan untuk mempelajari transmitansi elektron dan rapat arus terobosan. Pada studi ini, floating gate runcing dimodelkan sebagai elektroda berbentuk segitiga. Profil potensial elektrostatik elektroda segitiga ini dihitung secara analitik dengan menyelesaikan nilai batas dari persamaan Laplace dalam koordinat polar. Profil potensial dari perhitungan analitik ini lalu dibandingkan dengan profil potensial dari simulasi numerik. Dari hasil perhitungan diperoleh bahwa profil diagram energi yang dihitung secara analitik cukup sesuai dengan yang diperoleh dari simulasi numerik. Adapun terdapat sedikit perbedaan antara profil diagram pita analitik dan numerik dikarenakan elektroda segitiga diasumsikan terbuat dari logam sehingga pembentukan sumur kuantum pada permukaan floating gate diabaikan. Dari hasil permodelan analitik diperoleh bahwa sumur kuantum yang terbentuk pada tegangan sekitar 10 V (sesuai dengan tegangan hapus perangkat memori flash) adalah cukup dangkal, sehingga profil potensial yang terbentuk menjadi sangat mendekati hasil simulasi numerik. Dari hasil perhitungan diperoleh pula bahwa rapat arus terobosan yang dihitung menggunakan model kami memberikan hasil yang sangat dekat dengan hasil perhitungan dari model injektor silinder yang digunakan oleh peneliti dari Silicon Storage Technology (SST) sebagai produsen produk flash memory dengan floating gate berbentuk runcing.
Study on the Effects of Protective Layer on the Electron and Hole Transmission of Cadmium Sulfide (CdS) Photocatalyst Based on a Simple Quantum Mechanical Model Selly Alawiyah; Azrul Azwar; Fatimah Arofiati Noor
PRISMA FISIKA Vol 10, No 3 (2022)
Publisher : Jurusan Fisika, Universitas Tanjungpura

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.26418/pf.v10i3.60652

Abstract

Cadmium Sulfide (CdS) is a photocatalyst material with a low energy band gap, which exhibits a potential application for the visible light spectrum. However, the serious photo-corrosion of CdS inhibits its wide applications. To prevent photo-corrosion, one can coat the CdS surface coated with an insulating material. The addition of this insulating layer will produce a barrier potential on the surface of the CdS thereby blocking the transmission of electrons and holes. If the thickness of this protective layer is thin enough the electron and hole can be transmitted by the quantum tunneling effect. Using a simple quantum mechanical model, the phenomena of electron and hole transmission through potential barriers due to the presence of a protective layer on the CdS surface can be analyzed. Based on this model, the effects of variations in thickness and type of protective layer on the performance of CdS photocatalyst materials are studied by calculating the transmission coefficient and injection efficiency values. The protective coatings used in this study were Aluminum Oxide (Al2O3), Hafnium Dioxide (HfO2), and Silicon Dioxide (SiO2). The results show that transmission decreases as the thickness of the protective increases. Among the three types of protective coatings used, HfO2 material has the potential to be used because it has the best injection efficiency value.
PENGARUH MASSA SOURCE TERHADAP KETEBALAN THIN FILM MELALUI DEPOSISI VACUUM THERMAL EVAPORATION Kurniati Abidin; Jasruddin Daud Malago; Fatimah Arofiati Noor; Toto Winata
JFT : Jurnal Fisika dan Terapannya Vol 8 No 1 (2021): JUNI
Publisher : Universitas Islam Negeri Alauddin Makassar

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.24252/jft.v8i1.21350

Abstract

Purpose of this research to determine the effect of mass of source on thickness of thin film, with using the vacuum thermal evaporation. The metal used is Ag with a purity of 99,99% as a source of evaporated metal and using glass preparations as a substrate on which metal is deposited. By using three types of characterization such as FPP, SEM and EDS, the research results were obtained accurately. Based on  these characterizations, the results obtained a significant relationship between mass of source and thickness of thin film, increasing the mass of the source will increase the thickness of thin film. This result can be used as a reference in producing thin films with specific of thickness.
Co-Authors Abdul Muid Abdul Muid Agus Ismangil Azrul Azwar Bebeh Wahid Nuryadin Erik Bhekti Yutomo Feri Ramdani Ferry Iskandar Gilang Mardian Kartiwa Irfana Diah Faryuni Jasruddin Daud Malago Joko Sampurno Joko Sampurno Khairurrijal Khairurrijal Kurniati Abidin Mikrajuddin Abdullah Muhammad Amin Sulthoni Ramdani, Feri Selly Alawiyah Toto Winata Toto Winata