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All Journal Jurnal Pendidikan Fisika Indonesia Indonesian Journal of Mathematics and Natural Sciences
B Astuti, B
Jurusan Fisika, FMIPA, Universitas Negeri Semarang, Indonesia
Education Mathematics Physics

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PENGARUH TEMPERATUR DEPOSISI PADA PENUMBUHAN FILM TIPIS SILIKON KARBIDA DENGAN METODE HOMEMADE HOT-MESH CHEMICAL VAPOR DEPOSITION Astuti, B; Hashim, A M
Jurnal MIPA Vol 38, No 1 (2015): April 2015
Publisher : Jurnal MIPA

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Abstract

Film tipis silikon karbida (SiC) telah ditumbuhkan di atas substrate graphene/SiO2/Si dengan metode Homemade Hot-mesh chemical vapor deposition (Hot-Mesh CVD). Pengaruh dari temperature deposisi pada struktur dan morfologi film tipis SiC telah dipelajari dengan menggunakan X-Ray diffractometer (XRD), FESEM dan EDX, dan spektroskopi Raman. Karakterisasi XRD menunjukkan bahwa film tipis SiC memiliki struktur polikristal tipe kubik dengan orientasi (111). Kualitas film tipis SiC, dan ukuran butir kristal dari morfologi film yang dihasilkan meningkat dengan peningkatan temperatur deposisi. Dari karakterisasi spektroskopi Raman, dapati terdapat dua puncak pergeseran Raman yang dominan pada daerah sekitar 780 - 800 cm-1 dan  950 – 980 cm-1 yang merupakan mode fonon SiC-TO dan SiC-LO. Puncak pergeseran Raman tersebut bergeser ke bilangan gelombang yang lebih pendek dengan peningkatan temperature deposisi.Silicon carbide (SiC) thin film grown on graphene/SiO2/Si substrate using homemade hot mesh chemical vapor deposition (Hot-Mesh SVD) method has been done. Effect of  deposition temperature on structure and morphology of the thin film was studied by using X-ray diffractometer (XRD), FESEM and EDX, and Raman spectroscopy. XRD characteristics shows that SiC thin film has cubic polycrystalline structure with (111) orientation. Quality of the SiC thin film, and crystallite grain size from the film morphology was resulted increases with the increase of the deposition temperature. Based on the characterization of Raman spectroscopy, shows that two peak Raman shift in the range of 780 - 800 cm-1 and  950 – 980 cm-1 was attributed to SiC-TO and SiC-LO phonon mode.  The Raman shift peak was shifted toward the lower wavenumber with the increase of deposition temperature.
PENGARUH TEMPERATUR ANNEALING PADA SIFAT LISTRIK FILM TIPIS ZINC OKSIDA DOPING ALUMINIUM OKSIDA Sugianto, S; Zannah, R; Mahmudah, S N; Astuti, B; D.P, N M; Wibowo, A A; Marwoto, P; Ariyanto, D; Wibowo, E
Jurnal MIPA Vol 39, No 2 (2016): October 2016
Publisher : Jurnal MIPA

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Abstract

Penumbuhan film tipis zinc oksida di-doping aluminium oksida dengan variasi temperatur annealing menggunakan metode dc magnetron sputtering telah berhasil dilakukan. Pengaruh variasi temperature annealing pada struktur dan sifat listrik film tipis telah dipelajari dengan menggunakan XRD dan I-V meter. Berdasarkan karakterisasi XRD, film tipis yang dihasilkan memiliki struktur wurtzite dengan orientasi yang dominan adalah (002). Penambahan temperatur annealing pada proses penumbuhan meningkatkan intensitas orientasi (002). Selanjutnya analisis sifat listrik menggunakan I-V meter. Film tipis zinc oksida di-doping Al  pada temperatur annealing 300°C memiliki nilai resitivitas yang optimum yaitu 2,89 x 102  Wcm. Hal tersebut konsisten dengan hasil XRD yang menyatakan bahwa film tipis zinc oksida yang di doping  dengan  aluminium oksida pada temperature 300°C memiliki ukuran kristal yang semakin besar, kompak dan homogen.Growth of zinc oxide doped aluminum oxide thin film with annealing temperature variation using dc magnetron sputtering method has been done. Effect of annealing temperature variations on the structure and electrical properties of thin films has studied using XRD and I-V meter. According to XRD characterization, thin film was obtained has wurtzite structure with dominant orientation is (002). Increasing of annealing temperature on the growth process was increased the intensity of orientation (002). Furthermore, the electrical properties were measured using I-V meter.  Zinc oxide doped Al thin film shows the optimum resistivity around of 2.89 x 102 Wcm when the annealing temperature of 300 °C. This is consistent with XRD results which is the Zinc oxide doped aluminum oxide thin has a crystal size is getting bigger, dense, and homogeneous at annealing temperature 300°C.
PENGARUH TEMPERATUR ANNEALING PADA SIFAT LISTRIK FILM TIPIS ZINC OKSIDA DOPING ALUMINIUM OKSIDA Sugianto, S; Zannah, R; Mahmudah, S N; Astuti, B; D.P, N M; Wibowo, A A; Marwoto, P; Ariyanto, D; Wibowo, E
Indonesian Journal of Mathematics and Natural Sciences Vol 39, No 2 (2016): October 2016
Publisher : Universitas Negeri Semarang

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Abstract

Penumbuhan film tipis zinc oksida di-doping aluminium oksida dengan variasi temperatur annealing menggunakan metode dc magnetron sputtering telah berhasil dilakukan. Pengaruh variasi temperature annealing pada struktur dan sifat listrik film tipis telah dipelajari dengan menggunakan XRD dan I-V meter. Berdasarkan karakterisasi XRD, film tipis yang dihasilkan memiliki struktur wurtzite dengan orientasi yang dominan adalah (002). Penambahan temperatur annealing pada proses penumbuhan meningkatkan intensitas orientasi (002). Selanjutnya analisis sifat listrik menggunakan I-V meter. Film tipis zinc oksida di-doping Al  pada temperatur annealing 300°C memiliki nilai resitivitas yang optimum yaitu 2,89 x 102  Wcm. Hal tersebut konsisten dengan hasil XRD yang menyatakan bahwa film tipis zinc oksida yang di doping  dengan  aluminium oksida pada temperature 300°C memiliki ukuran kristal yang semakin besar, kompak dan homogen.Growth of zinc oxide doped aluminum oxide thin film with annealing temperature variation using dc magnetron sputtering method has been done. Effect of annealing temperature variations on the structure and electrical properties of thin films has studied using XRD and I-V meter. According to XRD characterization, thin film was obtained has wurtzite structure with dominant orientation is (002). Increasing of annealing temperature on the growth process was increased the intensity of orientation (002). Furthermore, the electrical properties were measured using I-V meter.  Zinc oxide doped Al thin film shows the optimum resistivity around of 2.89 x 102 Wcm when the annealing temperature of 300 °C. This is consistent with XRD results which is the Zinc oxide doped aluminum oxide thin has a crystal size is getting bigger, dense, and homogeneous at annealing temperature 300°C.
PENGARUH TEMPERATUR DEPOSISI PADA PENUMBUHAN FILM TIPIS SILIKON KARBIDA DENGAN METODE HOMEMADE HOT-MESH CHEMICAL VAPOR DEPOSITION Astuti, B; Hashim, A M
Indonesian Journal of Mathematics and Natural Sciences Vol 38, No 1 (2015): April 2015
Publisher : Universitas Negeri Semarang

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

Film tipis silikon karbida (SiC) telah ditumbuhkan di atas substrate graphene/SiO2/Si dengan metode Homemade Hot-mesh chemical vapor deposition (Hot-Mesh CVD). Pengaruh dari temperature deposisi pada struktur dan morfologi film tipis SiC telah dipelajari dengan menggunakan X-Ray diffractometer (XRD), FESEM dan EDX, dan spektroskopi Raman. Karakterisasi XRD menunjukkan bahwa film tipis SiC memiliki struktur polikristal tipe kubik dengan orientasi (111). Kualitas film tipis SiC, dan ukuran butir kristal dari morfologi film yang dihasilkan meningkat dengan peningkatan temperatur deposisi. Dari karakterisasi spektroskopi Raman, dapati terdapat dua puncak pergeseran Raman yang dominan pada daerah sekitar 780 - 800 cm-1 dan  950 – 980 cm-1 yang merupakan mode fonon SiC-TO dan SiC-LO. Puncak pergeseran Raman tersebut bergeser ke bilangan gelombang yang lebih pendek dengan peningkatan temperature deposisi.Silicon carbide (SiC) thin film grown on graphene/SiO2/Si substrate using homemade hot mesh chemical vapor deposition (Hot-Mesh SVD) method has been done. Effect of  deposition temperature on structure and morphology of the thin film was studied by using X-ray diffractometer (XRD), FESEM and EDX, and Raman spectroscopy. XRD characteristics shows that SiC thin film has cubic polycrystalline structure with (111) orientation. Quality of the SiC thin film, and crystallite grain size from the film morphology was resulted increases with the increase of the deposition temperature. Based on the characterization of Raman spectroscopy, shows that two peak Raman shift in the range of 780 - 800 cm-1 and  950 – 980 cm-1 was attributed to SiC-TO and SiC-LO phonon mode.  The Raman shift peak was shifted toward the lower wavenumber with the increase of deposition temperature.
Development of Interactive Learning on Electric Charge Materials for Deaf Students Nurkholifah, I Y; Mindyarto, B N; Astuti, B
Jurnal Pendidikan Fisika Indonesia Vol 18, No 2 (2022)
Publisher : Department of Physics, Faculty of Mathematics and Natural Sciences

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.15294/jpfi.v18i2.28332

Abstract

This study aims to develop learning media in the form of interactive videos and analyze the effectiveness of interactive science videos for deaf students. The method used is Research and Development by Sugiono, 2009. The subjects of this research trial were SMALB N Tegal students consisting of 8 students for small-scale trials and large-scale trials 10 students at SMALB N Semarang and SMALB Swadaya Semarang. the feasibility of the overall display as well as the content of the material and questions to measure the effectiveness of the learning media. The data analysis used was qualitative descriptive analysis and validated as well as video effectiveness analysis.Based on the data analysis of the validation results, it was shown that 73.75% was categorized as feasible and could be used in learning. The effectiveness data were analyzed using effect size and obtained a score of 2.16 on a small scale and 2.09 on a wide scale in the large category. Based on the results of the study, the media developed was suitable for use in the SMALB science learning process for deaf students.
Co-Authors A A Wibowo, A A A M Hashim, A M D Ariyanto, D E Wibowo, E Mindyarto, B N N M D.P, N M Nurkholifah, I Y P Marwoto R Zannah, R S N Mahmudah, S N Sugianto -