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All Journal journal of internal medicine Jurnal Sains Materi Indonesia Jurnal Pendidikan Fisika Indonesia JDM (Jurnal Dinamika Manajemen) Jurnal Pendidikan IPA Indonesia Indonesian Journal of Mathematics and Natural Sciences Jurnal Matematika & Sains Indonesian Journal of Science and Technology Journal of Natural Sciences and Mathematics Research INDONESIAN JOURNAL OF APPLIED PHYSICS Sprocket : Journal of Mechanical Engineering Prosiding Seminar Nasional Pascasarjana Proceeding of International Conference on Science, Education, and Technology Prosiding Seminar Nasional Biologi Berdaya Indonesian Journal of Community Empowerment
Sugianto -
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Agriculture, Biological Sciences & Forestry Astronomy Automotive Engineering Biochemistry, Genetics & Molecular Biology Chemistry Computer Science & IT Decision Sciences, Operations Research & Management Education Energy Engineering Environmental Science Industrial & Manufacturing Engineering Materials Science & Nanotechnology Mathematics Mechanical Engineering Medicine & Pharmacology Physics Social Sciences

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PENINGKATAN KUALITAS FILM TIPIS CdTe SEBAGAI ABSORBER SEL SURYA DENGAN MENGGUNAKAN DOPING TEMBAGA (Cu) Marwoto, P.; Darmaputra, N.M.; -, Sugianto; Othaman, Z.; Wibowo, E.; Astuti, S.Y.
Jurnal Pendidikan Fisika Indonesia Vol 8, No 2 (2012)
Publisher : Jurusan Fisika, Fakultas Matematika dan Ilmu Pengetahuan Alam, Universitas Negeri Semarang

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Abstract

Film tipis CdTe dengan doping tembaga (Cu) berkonsenterasi 2% telah berhasil ditumbuhkan di atas substrat Indium Tin Oxide (ITO) dengan metode dc magnetron sputtering. Penelitian ini dilakukan untuk mengetahui pengaruh doping Cu(2%) terhadap struktur morfologi, struktur kristal, fotoluminisensi dan resistivitas listrik film CdTe. Citra morfologi Scanning Electron Microscopy (SEM) dan hasil analisis struktur dengan X-Ray Diffraction (XRD) menunjukkan bahwa film CdTe:Cu(2%) mempunyai citra permukaan dan struktur kristal yang lebih sempurna dibandingkan film CdTe tanpa doping. Hasil analisis spektrometer fotoluminisensi menunjukkan bahwa film CdTe dan CdTe(2%) mempunyai puncak fotoluminisensi pada tiga panjang gelombang yang identik yaitu 685 nm (1,81 eV), 725 nm (1,71 eV) dan 740 nm (1,67 eV). Film CdTe dengan doping Cu(2%) memiliki intensitas puncak fotoluminisensi yang lebih tajam pada pita energi 1,81 eV dibandingkan dengan film CdTe tanpa doping. Pengukuran arus dan tegangan (I-V) menunjukkan bahwa pemberian doping Cu(2%) dapat menurunkan resistivitas film dari 8,40x109 Ωcm menjadi 6,92x105 Ωcm. Sebagai absorber sel surya, kualitas film tipis CdTe telah berhasil ditingkatkan dengan pemberian doping Cu(2%).CdTe:Cu(2%) thin film has been successfully grown on Indium Tin Oxide (ITO) substrates by using dc magnetron sputtering. This study was carried out in order to investigate the effect of Cu(2%) doping on the morphologycal structure, crystal structure, photoluminesence, and resistivity of CdTe thin film. Scanning Electron Microscopy (SEM)  images and X-Ray Diffraction (XRD) results showed that CdTe:Cu(2%) thin film has morphologycal and crystal structures more perfect than undoped CdTe film. Photoluminesence spectroscopy results showed that CdTe and CdTe:Cu(2%) thin films have luminesence peak at three identical wevelength regions i.e. 685 nm (1.81 eV), 725 nm (1.71 eV) and 740 nm (1.67 eV) however CdTe:Cu(2%) film shows sharper photoluminescence peak at band energy of 1.81 eV. Current-Voltage (I-V) measurement showed that the presenting of Cu doping on CdTe film configuration could decrease its electrical resistivity from 8.40x109 Ωcm to 6.92x105 Ωcm. Indeed, as absorber layer of solar cell, the performance of CdTe thin film has been succsesfully improved by using Cu(2%) as doping.
Fabrication and Characterization of Metal-Semiconductor-Metal n-GaN UV Photodetector by PA-MOCVD Dadi Rusdiana; Sugianto Sugianto; Andi Suhandi; Sukirno Sukirno; Maman Budiman; Mohamad Barmawi
Jurnal Matematika & Sains Vol 10, No 1 (2005)
Publisher : Institut Teknologi Bandung

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Abstract

Metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN epitaxial layers grown on (0001) sapphire by plasma-assisted metal organic chemical vapor deposition (PA-MOCVD) method. The photodetector with a thin GaN layer of 0.7 µm exhibited a low dark current with a saturation value of 1.469 x 10-14 A. The responsivity was 0.56 A/W at a wavelength of 320 nm under a bias voltage of 2.5 V.
VARIASI SUHU DEPOSISI PADA STRUKTUR, SIFAT OPTIK DAN LISTRIK FILM TIPIS SENG OKSIDA DENGAN DOPING GALIUM (ZNO:GA) Sulhadi, S.; Fatiatun, F.; Marwoto, P.; Sugianto, S.; Wibowo, E.
Jurnal Pendidikan Fisika Indonesia Vol 11, No 1 (2015): January 2015
Publisher : Physics Department, Faculty of Mathematics and Natural Sciences, Semarang State University

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.15294/jpfi.v11i1.4007

Abstract

Telah dilakukan deposisi film tipis ZnO:Ga di atas substrat kaca korning pada tekanan deposisi 500 mtorr dengan metode DC-magnetron sputtering. Film ditumbuhkan masing-masing pada suhu 325oC, 375oC, dan 425oC. Struktur, sifat optik dan sifat listrik film tipis yang dideposisikan telah dikarakterisasi dengan menggunakan EDX, XRD, SEM, spektrofotometer UV-Vis dan I-V Meter. Analisis EDX menunjukkan bahwa film yang terdeposisi merupakan film tipis ZnO:Ga. Hasil analisis struktur dengan XRD menunjukkan bahwa film tipis ZnO:Ga yang dideposisikan merupakan polikristalin dengan struktur heksagonal wurtzite. Film ZnO:Ga yang dideposisikan pada suhu 325o mempunyai kualitas kristal yang lebih baik dibandingkan dengan film yang dideposisikan pada suhu 375o dan 425oC. Hasil XRD juga terkonfirmasi dengan observasi SEM menunjukkan bahwa film ZnO:Ga yang dideposisikan pada suhu 325oC mempunyai ukuran butir yang lebih homogen dibandingkan dengan film yang ditumbuhkan pada suhu deposisi 375o dan 425oC. Film tipis ZnO:Ga yang ditumbuhkan pada suhu 325oC mencapai transmitansi optik ~ 89% dan energi bandgap ~3,33 eV. Sifat listrik dapat diketahui dengan menggunakan I-V Meter yang menunjukkan nilai  1,74 x10ˉ3 (Ωcm)ˉ1 pada suhu deposisi 325oC. Thin films ZnO:Ga were deposited on corning glass substrates with argon gas pressure 500 mtorr and variation temperature at 325oC,  375oC and 425oC by DC-Magnetron Sputtering. The structural studies, optical and electricity properties of the thin films have been investigated by means of EDX, XRD, SEM, Uv-Vis spectroscopy and I-V meter. The EDX result show that thin films were deposited is ZnO:Ga thin films. The structural studies result from XRD show the ZnO:Ga thin films deposited have polycrystalline with the hexagonal wurtzite structure. ZnO:Ga film were deposited at 325oC have the better quality crystal with the other. The XRD result also appropriate with SEM, it was shown at 325oC has grain size more homogeny with the other films. Thin films ZnO:Ga was deposited at 325oC has the optical transmittance ~89% and the bandgap ~3,33 eV. Electrical conductivity 1.74 x10ˉ3 (Ωcm)ˉ1 at deposited  325oC. 
PENGARUH TEMPERATUR ANNEALING PADA SIFAT LISTRIK FILM TIPIS ZINC OKSIDA DOPING ALUMINIUM OKSIDA Sugianto, S; Zannah, R; Mahmudah, S N; Astuti, B; D.P, N M; Wibowo, A A; Marwoto, P; Ariyanto, D; Wibowo, E
Jurnal MIPA Vol 39, No 2 (2016): October 2016
Publisher : Jurnal MIPA

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Abstract

Penumbuhan film tipis zinc oksida di-doping aluminium oksida dengan variasi temperatur annealing menggunakan metode dc magnetron sputtering telah berhasil dilakukan. Pengaruh variasi temperature annealing pada struktur dan sifat listrik film tipis telah dipelajari dengan menggunakan XRD dan I-V meter. Berdasarkan karakterisasi XRD, film tipis yang dihasilkan memiliki struktur wurtzite dengan orientasi yang dominan adalah (002). Penambahan temperatur annealing pada proses penumbuhan meningkatkan intensitas orientasi (002). Selanjutnya analisis sifat listrik menggunakan I-V meter. Film tipis zinc oksida di-doping Al  pada temperatur annealing 300°C memiliki nilai resitivitas yang optimum yaitu 2,89 x 102  Wcm. Hal tersebut konsisten dengan hasil XRD yang menyatakan bahwa film tipis zinc oksida yang di doping  dengan  aluminium oksida pada temperature 300°C memiliki ukuran kristal yang semakin besar, kompak dan homogen.Growth of zinc oxide doped aluminum oxide thin film with annealing temperature variation using dc magnetron sputtering method has been done. Effect of annealing temperature variations on the structure and electrical properties of thin films has studied using XRD and I-V meter. According to XRD characterization, thin film was obtained has wurtzite structure with dominant orientation is (002). Increasing of annealing temperature on the growth process was increased the intensity of orientation (002). Furthermore, the electrical properties were measured using I-V meter.  Zinc oxide doped Al thin film shows the optimum resistivity around of 2.89 x 102 Wcm when the annealing temperature of 300 °C. This is consistent with XRD results which is the Zinc oxide doped aluminum oxide thin has a crystal size is getting bigger, dense, and homogeneous at annealing temperature 300°C.
VARIASI SUHU DEPOSISI PADA STRUKTUR, SIFAT OPTIK DAN LISTRIK FILM TIPIS SENG OKSIDA DENGAN DOPING GALIUM (ZNO:GA) Sulhadi, S.; Fatiatun, F.; Marwoto, P.; Sugianto, S.; Wibowo, E.
Jurnal Pendidikan Fisika Indonesia Vol 11, No 1 (2015)
Publisher : Department of Physics, Faculty of Mathematics and Natural Sciences

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.15294/jpfi.v11i1.4007

Abstract

Telah dilakukan deposisi film tipis ZnO:Ga di atas substrat kaca korning pada tekanan deposisi 500 mtorr dengan metode DC-magnetron sputtering. Film ditumbuhkan masing-masing pada suhu 325oC, 375oC, dan 425oC. Struktur, sifat optik dan sifat listrik film tipis yang dideposisikan telah dikarakterisasi dengan menggunakan EDX, XRD, SEM, spektrofotometer UV-Vis dan I-V Meter. Analisis EDX menunjukkan bahwa film yang terdeposisi merupakan film tipis ZnO:Ga. Hasil analisis struktur dengan XRD menunjukkan bahwa film tipis ZnO:Ga yang dideposisikan merupakan polikristalin dengan struktur heksagonal wurtzite. Film ZnO:Ga yang dideposisikan pada suhu 325o mempunyai kualitas kristal yang lebih baik dibandingkan dengan film yang dideposisikan pada suhu 375o dan 425oC. Hasil XRD juga terkonfirmasi dengan observasi SEM menunjukkan bahwa film ZnO:Ga yang dideposisikan pada suhu 325oC mempunyai ukuran butir yang lebih homogen dibandingkan dengan film yang ditumbuhkan pada suhu deposisi 375o dan 425oC. Film tipis ZnO:Ga yang ditumbuhkan pada suhu 325oC mencapai transmitansi optik ~ 89% dan energi bandgap ~3,33 eV. Sifat listrik dapat diketahui dengan menggunakan I-V Meter yang menunjukkan nilai  1,74 x10ˉ3 (Ωcm)ˉ1 pada suhu deposisi 325oC. Thin films ZnO:Ga were deposited on corning glass substrates with argon gas pressure 500 mtorr and variation temperature at 325oC,  375oC and 425oC by DC-Magnetron Sputtering. The structural studies, optical and electricity properties of the thin films have been investigated by means of EDX, XRD, SEM, Uv-Vis spectroscopy and I-V meter. The EDX result show that thin films were deposited is ZnO:Ga thin films. The structural studies result from XRD show the ZnO:Ga thin films deposited have polycrystalline with the hexagonal wurtzite structure. ZnO:Ga film were deposited at 325oC have the better quality crystal with the other. The XRD result also appropriate with SEM, it was shown at 325oC has grain size more homogeny with the other films. Thin films ZnO:Ga was deposited at 325oC has the optical transmittance ~89% and the bandgap ~3,33 eV. Electrical conductivity 1.74 x10ˉ3 (Ωcm)ˉ1 at deposited  325oC. 
Enhancing Capability of Human Resources Innovation Sugianto, La Ode; Hartono, Sri
JDM (Jurnal Dinamika Manajemen) Vol 8, No 1 (2017): March 2017 (DOAJ Indexed)
Publisher : Department of Management, Faculty of Economics, Universitas Negeri Semarang

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.15294/jdm.v8i1.10415

Abstract

This study aims to analyze the interrelationship of the variables of knowledge collection, knowl-edge contribution, organizational learning, and human resource innovation capability at Sultan Agung Semarang Islamic Hospital. This study also aims to develop a model of the role of com-munication variables in moderating the equation of enhancement of human resource innova-tion capability at Sultan Agung Semarang Islamic Hospital. The population in this study were all the permanent nurses at Sultan Agung Islamic Hospital who worked on the hemodialysis action room, surgery room, ICU, and SEC which totaled 75 people. Method of sampling in this research using census method. This research was analyzed using Sruktural Equation Mod-eling (SEM) with Partial Least Square (PLS) method using SmartPLS 2.0 M3 software. The results showed that knowledge gathering had a significant positive effect on the contribution of knowledge and to the capability of human resource innovation. Contribution of knowledge has a significant positive effect on organizational learning and on human resource innovation capability. Organizational learning has a significant positive effect on the capability of human resource innovation.
PENGARUH TEMPERATUR ANNEALING PADA SIFAT LISTRIK FILM TIPIS ZINC OKSIDA DOPING ALUMINIUM OKSIDA Sugianto, S; Zannah, R; Mahmudah, S N; Astuti, B; D.P, N M; Wibowo, A A; Marwoto, P; Ariyanto, D; Wibowo, E
Indonesian Journal of Mathematics and Natural Sciences Vol 39, No 2 (2016): October 2016
Publisher : Universitas Negeri Semarang

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Abstract

Penumbuhan film tipis zinc oksida di-doping aluminium oksida dengan variasi temperatur annealing menggunakan metode dc magnetron sputtering telah berhasil dilakukan. Pengaruh variasi temperature annealing pada struktur dan sifat listrik film tipis telah dipelajari dengan menggunakan XRD dan I-V meter. Berdasarkan karakterisasi XRD, film tipis yang dihasilkan memiliki struktur wurtzite dengan orientasi yang dominan adalah (002). Penambahan temperatur annealing pada proses penumbuhan meningkatkan intensitas orientasi (002). Selanjutnya analisis sifat listrik menggunakan I-V meter. Film tipis zinc oksida di-doping Al  pada temperatur annealing 300°C memiliki nilai resitivitas yang optimum yaitu 2,89 x 102  Wcm. Hal tersebut konsisten dengan hasil XRD yang menyatakan bahwa film tipis zinc oksida yang di doping  dengan  aluminium oksida pada temperature 300°C memiliki ukuran kristal yang semakin besar, kompak dan homogen.Growth of zinc oxide doped aluminum oxide thin film with annealing temperature variation using dc magnetron sputtering method has been done. Effect of annealing temperature variations on the structure and electrical properties of thin films has studied using XRD and I-V meter. According to XRD characterization, thin film was obtained has wurtzite structure with dominant orientation is (002). Increasing of annealing temperature on the growth process was increased the intensity of orientation (002). Furthermore, the electrical properties were measured using I-V meter.  Zinc oxide doped Al thin film shows the optimum resistivity around of 2.89 x 102 Wcm when the annealing temperature of 300 °C. This is consistent with XRD results which is the Zinc oxide doped aluminum oxide thin has a crystal size is getting bigger, dense, and homogeneous at annealing temperature 300°C.
ASOSIASI CA 125 DENGAN RESPON TERAPI PADA PENDERITA LIMFOMA NON-HODGKIN AGRESIF YANG MENDAPAT KEMOTERAPI CYCLOPHOSPHAMIDE, DOXORUBICIN, VINCRISTINE, PREDNISONE (CHOP) S, Merlyna; Mulyono, Adi; -, Ugroseno; Putra Sedana, Made; Ashariati, Ami; -, Sugianto; -, Boediwarsono; -, Soebandiri
journal of internal medicine Vol. 12, No. 3 September 2011
Publisher : journal of internal medicine

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Abstract

Cancer antigen (CA) 125 is a glycoprotein produced by epithelial ovarium tumors and mesothelial cells, its levels alsohave been shown to be elevated in patients with Non-Hodgkin!s Lymphoma (NHL). Several papers have reported anassociation of high CA 125 serum levels with advanced NHL as well as relationship between high CA 125 values and pooroutcome. This study aimed to determine association between CA 125 levels (> 35 U/ml) with normal CA 125 (  35 U/ml)to the respone of NHL patients receiving chemotherapy CHOP. An observational analytic prospective study was done in40 patients with NHL at Dr Soetomo Hospital Surabaya. The patient were recruited from both inpatient and outpatientclinic and the initial CA 125 level had determined before the patients received chemotherapy with Cyclophosphamide,Doxorubicin, Vincristine and Prednisone (CHOP). Of the 40 patients who included in this study, 62.5% were male, 37.5%were female, the average age 43,45 years, the most kind of histophatology result were diffuse large cell, cleaved or noncleaved cell (47.5%). There was a signiÞ cant association between CA 125 levels with therapy respone groups (responiveand unresponive), with signiÞ cancy 0.001 (OR 23.22; CI 95%), and with therapy respone groups (CR, PR, NC, PD) withsigniÞ cancy 0.013. The group with normal CA 125 levels (  35 U/ml), had better respone, it was around 95% responive(CR = 35%, PR = 60%) and 5% unresponive (NC = 5%, PD = 0%) than the group who had high CA 125 levels (> 35U/ml), it was only 45% responive (CR = 15%, PR = 30% and 55% unresponive (NC = 50%, PD = 5%). As a conclusion,levels of CA 125 (> 35 U/ml) perhaps could be a negative prognostic factor to predict the CHOP chemotherapy responein NHL patients.
Scratch Assisted Physics Learning with a STEM Approach in the Pandemic Era to Develop 21st Century Learning Skills Yulianti, D.; Sugianto, S.; Ngafidin, K. M.
Jurnal Pendidikan IPA Indonesia Vol 11, No 1 (2022): March 2022
Publisher : Program Studi Pendidikan IPA Fakultas Matematika dan Ilmu Pengetahuan Alam (FMIPA)

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.15294/jpii.v11i1.32607

Abstract

This century demands that everyone has 21st-century skills. The Covid-19 pandemic era has an impact on education, however, to face the global era, 21st-century skills must still develop in higher education including 21st-century learning skills called 4C skills (Creative, Critical, Collaboration, Communication). The survey of results on students participating in the Mechanics I course shows that creative and critical thinking skills are in a low category, collaboration and communication skills are also in the low category. This study aims to develop 4C skills in the pandemic era through learning Physics in Mechanics course with a Science Technology Engineering and Mathematics (STEM) approach, assisted by Scratch, and to know students’ responses to the applied learning. The research subjects were students in the third semester, who took the Mechanics I course as many as 110 people and were divided into three groups. The research method is a quasi-experiment one-group pretest-posttest design. The research instrument consists of essay tests to measure creative and critical thinking skills and observation sheets to measure collaboration and communication skills. The results of data analysis demonstrated that students' 4C skills increased, the average is in the medium category.
KARAKTERISASI STRUKTUR DAN SIFAT LISTRIK FILM TIPIS ZINC OXIDE DIDOPING GALLIUM DAN ALUMINIUM Didik Aryanto; Sugianto Sugianto; Putut Marwoto; Sulhadi Sulhadi
Jurnal Sains Materi Indonesia Vol 15, No 3: APRIL 2014
Publisher : Center for Science & Technology of Advanced Materials - National Nuclear Energy Agency

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (152.716 KB) | DOI: 10.17146/jsmi.2014.15.3.4346

Abstract

KARAKTERISASI STRUKTUR DAN SIFAT LISTRIK FILM TIPIS ZINC OXIDE DIDOPING GALLIUM DAN ALUMINIUM. Film tipis Zinc Oxide (ZnO) yang didoping unsur Gallium (Ga) dan Aluminium (Al) telah ditumbuhkan di atas gelas corning menggunakan DC Magnetron Sputtering. Efek dari doping Ga dan Al pada struktur dan sifat listrik film tipis ZnO telah dipelajari menggunakan X-Ray Diffractometer (XRD) dan I-Vmeter. Karakterisasi XRD menunjukkan bahwa film tipis ZnO murni dan ZnO yang telah didoping memiliki struktur polikristal dengan tipe heksagonal wurtzite. Kualitas dari film tipis ZnO meningkat dengan didoping unsur Ga, tetapi menurun ketika didoping unsur Al. Resistivitas dari film tipis ZnO berkurang ketika didoping dengan unsur Ga dan bertambah saat didoping unsurAl. Resistivitas terendah ditunjukkan film tipis ZnO yang didoping Ga (1%) sebesar 0,209 x 107 Ωcm.
Co-Authors A A Wibowo, A A A. Suhandi Adi Franata Jaya Adi Mulyono Ami Ashariati Arlingga, Alfian Siswara Asih, Tri Sri Noor Azizah Zhafirah B Astuti, B Boediwarsono - Budi Astuti Cherly Firdharini D Ariyanto, D D. YULIANTI Didik Aryanto Didik Aryanto Didik Aryanto Dwi Yulianti E Wibowo, E E. Wibowo Endah F. Rahayu Farah Fitrotun Nisa’ Fatiatun, Fatiatun Fianti Fianti, Fianti Fitri Arum Sasi, Fitri Arum Kartono - Kayan Swastika Liza Laras Ayuningtyas Made Putra Sedana Maman Budiman Merlyna S Mohamad Barmawi Muqoyyanah Muqoyyanah N M D.P, N M N.M. Darmaputra Naina Rizki Kenarni Ngafidin, K. M. Ngurah Made Dharma Putra Nur Hamid P Marwoto P. Marwoto Putut Marwoto R Susanti R Zannah, R Riska Laila Mukaromah S N Mahmudah, S N S Sulhadi S.Y. Astuti Siti Harnina Bintari Slamet Priyono Soebandiri - Somawardi Somawardi Sri Hartono, Sri St. Budi Waluya Sugiyanto - Sukirno Sukirno Sulhadi - Talitha Widiatningrum Teguh Darsono Ugroseno - Wahyu B. Widayatno Wardono Wardono YL. Sukestiyarno Z. Othaman