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All Journal Indonesian Journal of Chemistry Jurnal Teori dan Aplikasi Fisika Journal of Energy, Material, and Instrumentation Technology
Muhammad Anshory
Institut Teknologi Sumatera
Chemical Engineering, Chemistry & Bioengineering Chemistry Control & Systems Engineering Electrical & Electronics Engineering Energy Materials Science & Nanotechnology Physics

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Electric Field Controlled Anisotropic Rashba Splitting in Janus Chromium Dichalcogenide Monolayers : A Computational Study based on Density Functional Theory Muhammad Anshory; Yusron Darojat; Yusuf Affandi
Jurnal Teori dan Aplikasi Fisika Vol 12, No 1 (2024): Jurnal Teori dan Aplikasi Fisika
Publisher : Universitas Lampung

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.23960/jtaf.v12i1.14201

Abstract

In this study, we explore the electronic structure of Janus Chromium Dichalcogenide monolayers CrXY (X ≠ Y = S, Se, Te) in the first Brillouin zone using Density Functional Theory. Due to the mirror symmetry break and strong SOC in the crystal structure of Janus Chromium Dichalcogenide monolayer, we discovered Rashba splitting at Γ points in the first Brillouin zone. We analyze this anisotropy of Rashba splitting using k∙p perturbation theory and group symmetry analysis. By giving the effect of external electric field, we manipulate the characteristics of Rashba splitting on the Janus Chromium Dichalcogenide monolayer. The manipulation of Rashba splitting by applying external electric field, shows that the Janus Chromium Dichalcogenide monolayers has the potential for spintronic devices.
Kemunculan Kemunculan Rashba Splitting Intrinsik pada Monolayer Janus Si2SbBi: Studi Komputasi Berdasarkan Teori Fungsional Densitas Affandi, Yusuf; Darojat, Yusron; Anshory, Muhammad; Masfufah, Awi
Journal of Energy, Material, and Instrumentation Technology Vol 5 No 1 (2024): Journal of Energy, Material, and Instrumentation Technology
Publisher : Departement of Physics, Faculty of Mathematics and Natural Sciences, University of Lampung

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.23960/jemit.v5i1.239

Abstract

In this paper, we investigate the electronic structure of Janus Si2SbBi monolayer and compare it with the non-polar systems Si2Bi2 and Si2Sb2 monolayer based on Density Functional Theory (DFT) calculation. According to the first-principles calculation, these systems exhibit semiconductor properties with energy gaps are 0.674 eV, 0.28 eV, and 1.13 eV for Janus Si2SbBi, Si2Bi2, and Si2Sb2, respectively. In addition, the intrinsic Rashba splitting is also observed around the Γ Point on conduction band minimum (CBM) in the electronic structure of Si2SbBi monolayer, which is not found in Si2Sb2 and Si2Bi2 monolayer systems. This Rashba splitting phenomenon we analyze by using the perturbation theory based on symmetry group and get the first-order Rashba Parameter α1=1.84 eVÅ , and α1=1.73 eVÅ , for Γ-K and Γ-M direction, respectively. With the strong intrinsic Rashba Splitting, the Janus Si­2SbBi monolayer has excellent potential to be the candidate of semiconductor material for spintronics devices.
Strong Anisotropic Rashba Effect with Tunable Spin-Splitting in Two-Dimensional Janus Vanadium Dichalcogenides Monolayer Affandi, Yusuf; Absor, Moh. Adhib Ulil; Anshory, Muhammad; Amalia, Wardah
Indonesian Journal of Chemistry Vol 24, No 4 (2024)
Publisher : Universitas Gadjah Mada

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.22146/ijc.93543

Abstract

Motivated by the recent discovery of the Rashba effect in two-dimensional (2D) Janus Transition Metal Dichalcogenides (TMDs) systems, we explore the Rashba effect on the Janus VXY (X = S, Se, Y = Se, Te) monolayer. By employing first-principles density functional theory (DFT) calculations, we find a strong anisotropic Rashba splitting observed around Γ points in the first Brillouin zone. We analyze this anisotropy of Rashba splitting by using k·p perturbation theory synergized with group symmetry analysis. By giving the effect of the biaxial strain, we manipulate the characteristics of the Rashba splitting on the Janus Vanadium Dichalcogenides system. Through spin texture analysis, we reveal both the in-plane and out-of-plane components of the spin textures, providing further evidence for the anisotropic nature of the Rashba spin-orbit coupling (SOC). The observed tuneable Rashba splitting by applying the strain effect shows that the Janus Vanadium dichalcogenides system has the potential to be used as a semiconductor material for spintronic devices.
Co-Authors Absor, Moh. Adhib Ulil Amalia, Wardah Masfufah, Awi Yusron Darojat Yusron Darojat Yusuf Affandi