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PENGARUH SELF REGULATED LEARNING SISWA TERHADAP LITERASI SAINS MELALUI PEMBELAJARAN INKUIRI TERBIMBING Yusuf Affandi; Abdurrahman Abdurrahman; Wayan Suana
Jurnal Pembelajaran Fisika Vol 3, No 2 (2015): Jurnal Pembelajaran Fisika
Publisher : Jurnal Pembelajaran Fisika

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

This research was aimed to determine the influence of students self-regulated learning in seventh grade of SMPN 2 Kotagajah towards scientific literacy through guided inquiry learning in the topic of heat and changes of temperature and also to investigate the enhancement of students scientific literacy using guided inquiry learning. The design of the research was one group pre test-post test. The result of this research showed that there was a positive and significant influence of students self-regulated learning towards scientific literacy skills with a percentage of the influence is 25.4%. There was an enhancement of students scientific literacy skill through guided inquiry learning model with the average of N-Gain 0,5 with medium category.Penelitian ini bertujuan untuk mengetahui pengaruh self regulated learning (SRL) siswa kelas VII SMPN 2 Kotagajah terhadap keterampilan literasi sains melalui model pembelajaran inkuiri terbimbing pada topik kalor dan perubahan suhu benda serta untuk mengetahui peningkatan literasi sains siswa menggunakan model pembelajaran inkuiri terbimbing. Desain penelitian yang digunakan adalah one grup pre test-post test. Hasil penelitian menunjukkan bahwa terdapat pengaruh SRL siswa yang positif dan signifikan terhadap keterampilan literasi sains dengan presentase pengaruh sebesar 25,4%. Terdapat peningkatan keterampilan literasi sains siswa pada model pembelajaran inkuiri terbimbing dengan rata-rata N-Gain 0,5 dan termasuk kedalam kategori sedang.Kata kunci: inkuiri terbimbing, literasi sains, self-regulated learning,SRL.
Electric Field Controlled Anisotropic Rashba Splitting in Janus Chromium Dichalcogenide Monolayers : A Computational Study based on Density Functional Theory Muhammad Anshory; Yusron Darojat; Yusuf Affandi
Jurnal Teori dan Aplikasi Fisika Vol 12, No 1 (2024): Jurnal Teori dan Aplikasi Fisika
Publisher : Universitas Lampung

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.23960/jtaf.v12i1.14201

Abstract

In this study, we explore the electronic structure of Janus Chromium Dichalcogenide monolayers CrXY (X ≠ Y = S, Se, Te) in the first Brillouin zone using Density Functional Theory. Due to the mirror symmetry break and strong SOC in the crystal structure of Janus Chromium Dichalcogenide monolayer, we discovered Rashba splitting at Γ points in the first Brillouin zone. We analyze this anisotropy of Rashba splitting using k∙p perturbation theory and group symmetry analysis. By giving the effect of external electric field, we manipulate the characteristics of Rashba splitting on the Janus Chromium Dichalcogenide monolayer. The manipulation of Rashba splitting by applying external electric field, shows that the Janus Chromium Dichalcogenide monolayers has the potential for spintronic devices.
Kemunculan Kemunculan Rashba Splitting Intrinsik pada Monolayer Janus Si2SbBi: Studi Komputasi Berdasarkan Teori Fungsional Densitas Affandi, Yusuf; Darojat, Yusron; Anshory, Muhammad; Masfufah, Awi
Journal of Energy, Material, and Instrumentation Technology Vol 5 No 1 (2024): Journal of Energy, Material, and Instrumentation Technology
Publisher : Departement of Physics, Faculty of Mathematics and Natural Sciences, University of Lampung

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.23960/jemit.v5i1.239

Abstract

In this paper, we investigate the electronic structure of Janus Si2SbBi monolayer and compare it with the non-polar systems Si2Bi2 and Si2Sb2 monolayer based on Density Functional Theory (DFT) calculation. According to the first-principles calculation, these systems exhibit semiconductor properties with energy gaps are 0.674 eV, 0.28 eV, and 1.13 eV for Janus Si2SbBi, Si2Bi2, and Si2Sb2, respectively. In addition, the intrinsic Rashba splitting is also observed around the Γ Point on conduction band minimum (CBM) in the electronic structure of Si2SbBi monolayer, which is not found in Si2Sb2 and Si2Bi2 monolayer systems. This Rashba splitting phenomenon we analyze by using the perturbation theory based on symmetry group and get the first-order Rashba Parameter α1=1.84 eVÅ , and α1=1.73 eVÅ , for Γ-K and Γ-M direction, respectively. With the strong intrinsic Rashba Splitting, the Janus Si­2SbBi monolayer has excellent potential to be the candidate of semiconductor material for spintronics devices.
Investigation of Thermoelectric Properties of a Two-Dimensional Janus Si2SbBi and non-Janus SiSb using Computational Method Density-Functional Theory Affandi, Yusuf; Hanna, Muhammad Yusrul
Jurnal Elektronika dan Telekomunikasi Vol 23, No 2 (2023)
Publisher : National Research and Innovation Agency

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.55981/jet.567

Abstract

Two-dimensional materials are of considerable interest owing to their unique electronic and thermal properties. In this study, we investigate the thermoelectric (TE) potential of two-dimensional Janus Si2SbBi and compare it with that non-Janus SiSb based on the density-functional theory (DFT) calculations. According to the DFT calculations, both materials exhibit semiconductor properties with bandgaps of 0.728 eV (Janus Si2SbBi) and 0.82 eV (SiSb), respectively. Having information on the energy band structure, we evaluated TE properties using the Boltzmann transport equations as a function of Fermi energy as implemented in BoltzTraP2 code. We find a Seebeck coefficient of 1349 (1342)  for -type ( -type) dopingat T = 300 K of the Si2SbBi monolayer. The results of our study present that the Janus Si2SbBi monolayer possesses a high Seebeck coefficient and electrical conductivity, leading to a substantial power factor (PF) of    at 300 K. The PF increase with increase in temperature and has the highest peak value up to  at 600 K. The results show that the Seebecek coefficient, electrical conductivity and power factor of the Janus Si2SbBi monolayer are greater compared to those of non-Janus SiSb monolayer. Our study presents Janus Si2SbBi as a potential thermoelectric candidate, highlighting its prospective use in advanced thermoelectric applications.
Strong Anisotropic Rashba Effect with Tunable Spin-Splitting in Two-Dimensional Janus Vanadium Dichalcogenides Monolayer Affandi, Yusuf; Absor, Moh. Adhib Ulil; Anshory, Muhammad; Amalia, Wardah
Indonesian Journal of Chemistry Vol 24, No 4 (2024)
Publisher : Universitas Gadjah Mada

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.22146/ijc.93543

Abstract

Motivated by the recent discovery of the Rashba effect in two-dimensional (2D) Janus Transition Metal Dichalcogenides (TMDs) systems, we explore the Rashba effect on the Janus VXY (X = S, Se, Y = Se, Te) monolayer. By employing first-principles density functional theory (DFT) calculations, we find a strong anisotropic Rashba splitting observed around Γ points in the first Brillouin zone. We analyze this anisotropy of Rashba splitting by using k·p perturbation theory synergized with group symmetry analysis. By giving the effect of the biaxial strain, we manipulate the characteristics of the Rashba splitting on the Janus Vanadium Dichalcogenides system. Through spin texture analysis, we reveal both the in-plane and out-of-plane components of the spin textures, providing further evidence for the anisotropic nature of the Rashba spin-orbit coupling (SOC). The observed tuneable Rashba splitting by applying the strain effect shows that the Janus Vanadium dichalcogenides system has the potential to be used as a semiconductor material for spintronic devices.