Development of Accurate BSIM4 Noise Parameters for CMOS 0.13-µm Transistors in Below 3-GHz LNA Application

Asmaa Nur Aqilah Zainal Badri (Universiti Sains Malaysia)
Norlaili Mohd Noh (Universiti Sains Malaysia)
Shukri bin Korakkottil Kunhi Mohd (Universiti Sains Malaysia)
Asrulnizam Abd Manaf (Universiti Sains Malaysia)
Arjuna Marzuki (Universiti Sains Malaysia)
Mohd Tafir Mustaffa (Universiti Sains Malaysia)
Mohamed Fauzi Packeer Mohamed (Universiti Sains Malaysia)

Indonesian Journal of Electrical Engineering and Computer Science
Vol 10, No 3: June 2018

Accurate transistor thermal noise model is crucial in IC design as it allows accurate selection of transistors for specific frequency application. The accuracy of the model is represented by the similarity between the simulated and the measured noise parameters (NPs). This work was based on a problem faced by a foundry concerning the dissimilarities between the measured and simulated NPs, especially minimum noise figure (NFmin) for frequencies below 3 GHz.