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Mohamed Fauzi Packeer Mohamed
Universiti Sains Malaysia

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Development of Accurate BSIM4 Noise Parameters for CMOS 0.13-µm Transistors in Below 3-GHz LNA Application Asmaa Nur Aqilah Zainal Badri; Norlaili Mohd Noh; Shukri bin Korakkottil Kunhi Mohd; Asrulnizam Abd Manaf; Arjuna Marzuki; Mohd Tafir Mustaffa; Mohamed Fauzi Packeer Mohamed
Indonesian Journal of Electrical Engineering and Computer Science Vol 10, No 3: June 2018
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijeecs.v10.i3.pp925-933

Abstract

Accurate transistor thermal noise model is crucial in IC design as it allows accurate selection of transistors for specific frequency application. The accuracy of the model is represented by the similarity between the simulated and the measured noise parameters (NPs). This work was based on a problem faced by a foundry concerning the dissimilarities between the measured and simulated NPs, especially minimum noise figure (NFmin) for frequencies below 3 GHz.
Co-Authors Arjuna Marzuki Asmaa Nur Aqilah Zainal Badri Asrulnizam Abd Manaf Mohd Tafir Mustaffa Norlaili Mohd Noh Shukri bin Korakkottil Kunhi Mohd