Critical Condition in CuInAlSe2 Growth of Solar Cell Absorber

Sujarwata Sujarwata (Universitas Negeri Semarang)
Fianti Fianti (Universitas Negeri Semarang)
J.Y. Jung (Yeungnam University)
S.H. Lee (Yeungnam University)
K.H. Kim (Yeungnam University)
M.I. Amal (Lembaga Ilmu Pengetahuan Indonesia)

TELKOMNIKA (Telecommunication Computing Electronics and Control)
Vol 14, No 3: September 2016

CuInAlSe2 (CIAS) thin films were prepared using pulsed laser deposition (PLD) and selenization. The PLD process utilized a certain kind of stacking order to deposit elemental films on glass substrates, layer by layer, for precursor preparation. They were designed to be Al- and Cu-deficient and selenized using two different heat treatment steps. According to its precursor compositional ratio, stacking order, and heat treatment, each CIAS film showed different properties and a critical condition. The crystalline phases, compositional ratio, morphology, and optical-electrical properties of the CIAS films are discussed here.