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Sujarwata Sujarwata
Universitas Negeri Semarang
Computer Science & IT

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OFET Preparation by Lithography and Thin Film Depositions Process Sujarwata Sujarwata; Fianti Fianti; Langlang Handayani; Aji Purwinarko; Susilo Susilo
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 16, No 1: February 2018
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v16i1.6544

Abstract

The length of the channel OFET based thin film is determined during preparation takes place using the technique of lithography and mask during the metal deposition process. The lithography technique is the basic process steps in the manufacture of semiconductor devices. Lithography is the process of moving geometric shapes mask pattern to a thin film of material that is sensitive to light. The pattern of geometric shapes on a mask has specifications, as follows: long-distance source and drain channels varied, i.e. 100 μm, the width of the source and drain are made permanent. Bottom contact OFET structure has been created using a combination of lithography and thin film deposition processes.
Critical Condition in CuInAlSe2 Growth of Solar Cell Absorber Sujarwata Sujarwata; Fianti Fianti; J.Y. Jung; S.H. Lee; K.H. Kim; M.I. Amal
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 14, No 3: September 2016
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v14i3.3644

Abstract

CuInAlSe2 (CIAS) thin films were prepared using pulsed laser deposition (PLD) and selenization. The PLD process utilized a certain kind of stacking order to deposit elemental films on glass substrates, layer by layer, for precursor preparation. They were designed to be Al- and Cu-deficient and selenized using two different heat treatment steps. According to its precursor compositional ratio, stacking order, and heat treatment, each CIAS film showed different properties and a critical condition. The crystalline phases, compositional ratio, morphology, and optical-electrical properties of the CIAS films are discussed here.   
Co-Authors Aji Purwinarko, Aji Fianti Fianti, Fianti J.Y. Jung K.H. Kim Langlang Handayani M.I. Amal S.H. Lee Susilo Susilo