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All Journal TELKOMNIKA (Telecommunication Computing Electronics and Control)
J.Y. Jung
Yeungnam University
Computer Science & IT

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Critical Condition in CuInAlSe2 Growth of Solar Cell Absorber Sujarwata Sujarwata; Fianti Fianti; J.Y. Jung; S.H. Lee; K.H. Kim; M.I. Amal
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 14, No 3: September 2016
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v14i3.3644

Abstract

CuInAlSe2 (CIAS) thin films were prepared using pulsed laser deposition (PLD) and selenization. The PLD process utilized a certain kind of stacking order to deposit elemental films on glass substrates, layer by layer, for precursor preparation. They were designed to be Al- and Cu-deficient and selenized using two different heat treatment steps. According to its precursor compositional ratio, stacking order, and heat treatment, each CIAS film showed different properties and a critical condition. The crystalline phases, compositional ratio, morphology, and optical-electrical properties of the CIAS films are discussed here.   
Co-Authors Fianti Fianti, Fianti K.H. Kim M.I. Amal S.H. Lee Sujarwata Sujarwata