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JURNAL POLI-TEKNOLOGI
Published by Politeknik Negeri Jakarta
ISSN : 14122782     EISSN : 24079103     DOI : https://doi.org/10.32722/pt.v20i1
Core Subject : Science, Engineering,
Aerospace Engineering Automotive Engineering Chemical Engineering, Chemistry & Bioengineering Civil Engineering, Building, Construction & Architecture Computer Science & IT Control & Systems Engineering Electrical & Electronics Engineering Energy Engineering Industrial & Manufacturing Engineering Materials Science & Nanotechnology Mechanical Engineering Transportation
Poli-Teknologi Journal is a journal, which began publication in 2002, published by the Research and community service Unit of Politeknik Negeri Jakarta. It starts from Volume 1 Number 1 in January 2022 for printed version; ISSN (print) 1412-2782 and ISSN (online) 2407-9103. Poli-Teknologi Journal is a series of scientific publications in applied science and technology area from the perspective of a multi and interdisciplinary studies and it is published 3 times in year.
Arjuna Subject : Teknik (semua kategori) - Teknik (Lain-Lain)
Articles 12 Documents
 1   2 
Search results for , issue "Vol. 10 No. 2 (2011)" : 12 Documents clear
RANCANG BANGUN MODEL PENGUJIAN TEGANGAN LANGKAH PADA TITIK PENTANAHAN METODE ROD DAN METODE MESH Ismujianto Ismujianto; Isdawimah Isdawimah; Silo Wardono; Wartiyati Wartiyati
Jurnal Poli-Teknologi Vol. 10 No. 2 (2011)
Publisher : Politeknik Negeri Jakarta

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (805.867 KB) | DOI: 10.32722/pt.v10i2.11

Abstract

Step voltage is the voltage on both legs affected by living beings (human and animal) due to be in electrified areas. This current flow can occur due to lightning, the voltage is leaking into the ground, under-voltage wires disconnected and touch the ground, the difference between the value of earthing resistance to earth with one another and so on. At a certain value voltage step can be harmful for living beings. Earth resistance value, the planting depth electrodes, electrode shape, and site conditions will determine the performance of earth to earth, among others, affect the value of the voltage step that occurs around the point of grounding. This study intends to test the security level of the fourth point of grounding, which has been prepared by different methods, the voltage step that occurs in the vicinity. The results showed, the most dangerous area is closest to the fault location with a radius of 0-10m. Mesh method produces a voltage step lower than the method of Rod. Key words: Hazardous area, rod method, mesh method, the voltage step ABSTRAK Tegangan langkah adalah tegangan yang terkena pada kedua kaki mahkluk hidup (manusia dan hewan) akibat berada pada daerah yang dialiri arus listrik. Aliran arus ini dapat terjadi akibat adanya petir, tegangan yang bocor ke tanah, kabel dalam kondisi bertegangan terputus dan menyentuh tanah, perbedaan nilai tahanan pentanahan antara titik pentanahan satu dengan lainnya dan sebagainya. Pada nilai tertentu tegangan langkah dapat membahayakan bagi makhluk hidup. Nilai tahanan pentanahan, kedalaman penanaman elektroda, bentuk elektroda, dan kondisi lokasi pentanahan sangat menentukan kinerja titik pentanahan, antara lain mempengaruhi nilai tegangan langkah yang terjadi di sekitar titik pentanahan. Penelitian ini bermaksud untuk menguji tingkat keamanan keempat titik pentanahan, yang telah dibuat dengan metode berbeda, terhadap tegangan langkah yang terjadi di sekitarnya. Hasil penelitian menunjukkan, daerah yang paling berbahaya adalah yang terdekat dengan lokasi gangguan dengan radius 0-10m. metode Mesh menghasilkan tegangan langkah lebih rendah dibandingkan dengan metode Rod. Kata kunci: Daerah berbahaya, metode rod, metode mesh, tegangan langkah
RANCANGAN HETEROJUNCTION BIPOLAR TRANSISTOR SILIKON GERMANIUM (HBT’S SIGE) DENGAN PENDEKATAN POISSON EQUATION Tossin Alamsyah; Endang Saepuddin
Jurnal Poli-Teknologi Vol. 10 No. 2 (2011)
Publisher : Politeknik Negeri Jakarta

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (395.834 KB) | DOI: 10.32722/pt.v10i2.12

Abstract

Ideally performance of Heterojunction Bipolar Transistor (SiGe HBT's) is the Threshold Frequency (ft) and Maximum Frequency (fmax) and high current gain. In order to get the performance can be used the physics approach that that is heavy doping on the emitter and narrow base width. This research conducted at the design of SiGe HBT's based on a model approach three (3)-dimensional hydrodynamic approach to the Poisson equation with electron transport. Simulation using the software Bipole3 with input parameters based on models developed by IBM's first generation. Results of analysis and discussion show that the design of SiGe HBT's provide the frequency threshold (FT) 56 GHz with a deviation of 7% of the worth of a model developed by IBM. Keywords: HBT’s SiGe, Poisson Equation. ABSTRAK Kinerja ideal dari Heterojunction Bipolar Transistor (HBT’s SiGe) adalah Threshold Frequency ( ft ) dan Maximum Frequency ( fmax ) serta Current Gain yang tinggi. Untuk mendapatkan unjuk kerja yang tersebut dapat digunakan pendekatan physic yaitu heavy doping pada emitter dan lebar basis dibuat sempit (narrow base width). Pada riset ini dilakukan rancangan HBT’s SiGe berdasarkan pendekatan model tiga(3) dimensi hydrodynamic dengan pendekatan Poisson equation electron transport. Simulasi menggunakan perangkat lunak Bipole3 dengan parameter masukan berdasarkan model yang dikembangkan oleh IBM generasi pertama Hasil analisa dan pembahasan menunjukkan bahwa hasil rancangan HBT’s SiGe menghasilkan frekuensi threshold (fT) 56 GHz dengan deviasi senilai 7% terhadap model yang dikembangkan oleh IBM. Kata kunci: HBT’s SiGe, Persamaan Poisson

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