Indonesian Journal of Electrical Engineering and Informatics (IJEEI)
Indonesian Journal of Electrical Engineering and Informatics (IJEEI) is a peer reviewed International Journal in English published four issues per year (March, June, September and December). The aim of Indonesian Journal of Electrical Engineering and Informatics (IJEEI) is to publish high-quality articles dedicated to all aspects of the latest outstanding developments in the field of electrical engineering. Its scope encompasses the engineering of Telecommunication and Information Technology, Applied Computing & Computer, Instrumentation & Control, Electrical (Power), Electronics, and Informatics.
Articles
783 Documents
Experimental Analysis on Double Layer Kapton Material using Peltier Thermoelectric Device
Dahalan, AH;
Aziz, M.Z.A. Abd.;
Othman, M.A.
Indonesian Journal of Electrical Engineering and Informatics (IJEEI) Vol 8, No 2: June 2020
Publisher : IAES Indonesian Section
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DOI: 10.52549/ijeei.v8i2.1271
Kapton is one of the flexible materials used in the development of microwave components for the telecommunications system. The electrical properties of Kapton are dependent on the material's temperature. In this study, this material will be heated, and the electrical properties of dielectric permittivity and loss tangent will be analyzed. This material heating process is done by using Peltier thermoelectric which is installed with Aluminium alloy. The 0 V up to 7 V DC voltage was supplied to the Peltier during the heating process. Then, the electrical properties of Kapton were measured by using a dielectric probe and vector network analyzer (VNA) at frequencies of 1 GHz to 9 GHz. The results obtained show the Kapton temperature was increased from 27oC to 41oC. Meanwhile, the dielectric permittivity also varied from 1.72 to 1.64 at the frequency of 5 GHz when 4 V was used. The maximum loss tangent value of 0.5 was observed when the maximum DC voltage of 7 V was applied. The knowledge of this experimental work can be used to design reconfigurable microwave components for smart system applications
Impact of Device Parameter Variation on the Electrical Characteristic of N-type Junctionless Nanowire Transistor with High-k Dielectrics
Mohammed Adamu Sule;
Mathangi Ramakrishnan;
Nurul Ezaila Alias;
Norlina Paraman;
Zaharah Johari;
Afiq Hamzah;
Michael Loong Peng Tan;
Usman Ulllah Sheikh
Indonesian Journal of Electrical Engineering and Informatics (IJEEI) Vol 8, No 2: June 2020
Publisher : IAES Indonesian Section
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DOI: 10.52549/ijeei.v8i2.1277
Metallurgical junction and thermal budget are serious constraints in scaling and performance of conventional metal-oxide-semiconductor field-effect transistor (MOSFET). To overcome this problem, junctionless nanowire field-effect transistor (JLNWFET) was introduced. In this paper, we investigate the impact of device parameter variation on the performance of n-type JLNWFET with high-k dielectrics. The electrical characteristic of JLNWFET and the inversion-mode transistor of different gate length (LG) and nanowire diameter (dNW) was compared and analyzed. Different high-k dielectrics were used to get an optimum device structure of JLNWFET. The device was simulated using SDE Tool of Sentaurus TCAD and the I-V characteristics were simulated using Sdevice Tools. Lombardi mobility model and Philips unified mobility model were applied to define its electric field and doping dependent mobility degradation. A thin-film heavily doped silicon nanowire with a gate electrode that controls the flow of current between the source and drain was used. The proposed JLNWFET exhibits high ON-state current (ION) due to the high doping concentration (ND) of 1 x 1019 cm-3 which leads to the improved ON-state to OFF-state current ratio (ION/IOFF) of about 10% than the inversion-mode device for a LG of 7 nm and the silicon dNW of 6 nm. Electrical characteristics such are drain induced barrier lowering (DIBL) and subthreshold slope (SS) were extracted which leads to low leakage current as well as a high ION/IOFF ratio. The performance was improved by introducing silicon dioxide (SiO2) with high-k dielectric materials, hafnium oxide (HfO2) and silicon nitrate (Si3N4). It was found that JLNWFET with HfO2 exhibits better electrical characteristics and performance.
Impact of Device Parameter Variation on the Electrical Characteristic of N-type Junctionless Nanowire Transistor with High-k Dielectrics
Sule, Mohammed Adamu;
Ramakrishnan, Mathangi;
Alias, Nurul Ezaila;
Paraman, Norlina;
Johari, Zaharah;
Hamzah, Afiq;
Tan, Michael Loong Peng;
Sheikh, Usman Ulllah
Indonesian Journal of Electrical Engineering and Informatics (IJEEI) Vol 8, No 2: June 2020
Publisher : IAES Indonesian Section
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DOI: 10.52549/ijeei.v8i2.1277
Metallurgical junction and thermal budget are serious constraints in scaling and performance of conventional metal-oxide-semiconductor field-effect transistor (MOSFET). To overcome this problem, junctionless nanowire field-effect transistor (JLNWFET) was introduced. In this paper, we investigate the impact of device parameter variation on the performance of n-type JLNWFET with high-k dielectrics. The electrical characteristic of JLNWFET and the inversion-mode transistor of different gate length (LG) and nanowire diameter (dNW) was compared and analyzed. Different high-k dielectrics were used to get an optimum device structure of JLNWFET. The device was simulated using SDE Tool of Sentaurus TCAD and the I-V characteristics were simulated using Sdevice Tools. Lombardi mobility model and Philips unified mobility model were applied to define its electric field and doping dependent mobility degradation. A thin-film heavily doped silicon nanowire with a gate electrode that controls the flow of current between the source and drain was used. The proposed JLNWFET exhibits high ON-state current (ION) due to the high doping concentration (ND) of 1 x 1019 cm-3 which leads to the improved ON-state to OFF-state current ratio (ION/IOFF) of about 10% than the inversion-mode device for a LG of 7 nm and the silicon dNW of 6 nm. Electrical characteristics such are drain induced barrier lowering (DIBL) and subthreshold slope (SS) were extracted which leads to low leakage current as well as a high ION/IOFF ratio. The performance was improved by introducing silicon dioxide (SiO2) with high-k dielectric materials, hafnium oxide (HfO2) and silicon nitrate (Si3N4). It was found that JLNWFET with HfO2 exhibits better electrical characteristics and performance.
Impact of unbalanced harmonic loads towards winding temperature rise using FEM modeling
D.M. Said;
Z.I.M. Yassin;
N. Ahmad;
NN Nik Abd Malik;
H. Abdullah
Indonesian Journal of Electrical Engineering and Informatics (IJEEI) Vol 8, No 2: June 2020
Publisher : IAES Indonesian Section
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DOI: 10.52549/ijeei.v8i2.1283
This paper investigates the hot spot temperature of transformer thermal model due to unbalanced harmonic loads from the network. The finite element method has been used to solve the coupling multiphysic for heat transfer in solid and fluid. All material properties in the model were been took into consideration such as copper as the coil material, iron as the core material and transformer oil as the coolant material for the transformer. The transient study on the model has been set for 1minutes using 30 degree celcius as the ambient temperature reference. The simulation hot spot temperature result has been compared for rated load (without harmonic) versus the unbalanced load (with harmonic) which shown in 2D regime. It can be clearly seen the significant increment of the hotspot temperature of the transformer from the rated load to the unbalanced harmonic load. The result has successfully shows the detection of the prospect failure of the transformer due to the harmonic current load in a form of winding loss that contributes to the hotspot temperature of the transformer.
Impact of unbalanced harmonic loads towards winding temperature rise using FEM modeling
Said, D.M.;
Yassin, Z.I.M.;
Ahmad, N.;
Malik, NN Nik Abd;
Abdullah, H.
Indonesian Journal of Electrical Engineering and Informatics (IJEEI) Vol 8, No 2: June 2020
Publisher : IAES Indonesian Section
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DOI: 10.52549/ijeei.v8i2.1283
This paper investigates the hot spot temperature of transformer thermal model due to unbalanced harmonic loads from the network. The finite element method has been used to solve the coupling multiphysic for heat transfer in solid and fluid. All material properties in the model were been took into consideration such as copper as the coil material, iron as the core material and transformer oil as the coolant material for the transformer. The transient study on the model has been set for 1minutes using 30 degree celcius as the ambient temperature reference. The simulation hot spot temperature result has been compared for rated load (without harmonic) versus the unbalanced load (with harmonic) which shown in 2D regime. It can be clearly seen the significant increment of the hotspot temperature of the transformer from the rated load to the unbalanced harmonic load. The result has successfully shows the detection of the prospect failure of the transformer due to the harmonic current load in a form of winding loss that contributes to the hotspot temperature of the transformer.
The Segmentation Analysis of Retinal Image Based on K-means Algorithm for Computer-Aided Diagnosis of Hypertensive Retinopathy
Wiharto Wiharto;
Esti Suryani
Indonesian Journal of Electrical Engineering and Informatics (IJEEI) Vol 8, No 2: June 2020
Publisher : IAES Indonesian Section
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DOI: 10.52549/ijeei.v8i2.1287
Computer-aided diagnosis of hypertensive retinopathy (CAD-HR) is performed by analyzing the retinal image. The analysis is carried out in several stages, one of which is image segmentation. The segmentation carried out so far generally uses a region-based and threshold-based approach. There is not yet a clustering-based approach, and there has been no previous analysis of why clustering-based is not yet widely used. This study aims to conduct clustering-based Segmentation analysis, specifically k-means clustering in CAD-HR. The research method used is divided into four stages, namely preprocessing, segmentation, feature extraction using fractal dimensions, statistical analysis for classification, and classification. Testing is done using the DRIVE and STARE datasets. The results of statistical tests showed that the number of clusters 3 was able to provide a significant difference between the fractal positive and negative dimensions of hypertensive retinopathy. The model of CAD-RH using the k-means algorithm for segmentation method is able to provide 80% sensitivity performance. The k-mean algorithm can be used as an alternative to segmenting retinal blood vessels.
The Segmentation Analysis of Retinal Image Based on K-means Algorithm for Computer-Aided Diagnosis of Hypertensive Retinopathy
Wiharto, Wiharto;
Suryani, Esti
Indonesian Journal of Electrical Engineering and Informatics (IJEEI) Vol 8, No 2: June 2020
Publisher : IAES Indonesian Section
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DOI: 10.52549/ijeei.v8i2.1287
Computer-aided diagnosis of hypertensive retinopathy (CAD-HR) is performed by analyzing the retinal image. The analysis is carried out in several stages, one of which is image segmentation. The segmentation carried out so far generally uses a region-based and threshold-based approach. There is not yet a clustering-based approach, and there has been no previous analysis of why clustering-based is not yet widely used. This study aims to conduct clustering-based Segmentation analysis, specifically k-means clustering in CAD-HR. The research method used is divided into four stages, namely preprocessing, segmentation, feature extraction using fractal dimensions, statistical analysis for classification, and classification. Testing is done using the DRIVE and STARE datasets. The results of statistical tests showed that the number of clusters 3 was able to provide a significant difference between the fractal positive and negative dimensions of hypertensive retinopathy. The model of CAD-RH using the k-means algorithm for segmentation method is able to provide 80% sensitivity performance. The k-mean algorithm can be used as an alternative to segmenting retinal blood vessels.
Obstacle Evasion Algorithm Using Convolutional Neural Networks and Kinect-V1
Paula Catalina Useche-Murillo;
Javier O Pinzón-Arenas;
Robinson Jimenez-Moreno
Indonesian Journal of Electrical Engineering and Informatics (IJEEI) Vol 8, No 3: September 2020
Publisher : IAES Indonesian Section
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DOI: 10.52549/ijeei.v8i3.2078
The following paper presents the development of an algorithm for the evasion of static obstacles during the process of gripping the desired object, using an anthropomorphic robot, artificial intelligence, and machine vision systems. The algorithm has developed to detect a variable number of obstacles (between 1 and 15) and the grip desired element, using a robot with 3 degrees of freedom (DoF). A Kinect V1 was used to capture the RGB-D information of the environment and Convolutional Neural Networks for the detection and classification of each element. The capture of the three-dimensional information of the detected objects allows comparing the distance between the obstacles and the robot, to make decisions regarding the movement of the gripper to evade elements present in the path and hold the desired object without colliding. Obstacles of less than 18 cm in height were avoided, concerning the ground, with a probability of collision of 0% under specific environmental conditions, moving the robot since initial path in a straight line to the desired object, which is prone to changes according to the obstacles present in its. Function tests have been according to the manipulator's ability to evade possible obstacles of different heights located between the robot and the desired object
Towards energy transition: conjoint assessment of large-scale PV system performance and interconnection impacts in isolated microgrid
Zen L. Chai;
S.P Ang;
A. Khalil;
M. A. Salam;
W. Z. Wan Hasan;
William Voon
Indonesian Journal of Electrical Engineering and Informatics (IJEEI) Vol 8, No 3: September 2020
Publisher : IAES Indonesian Section
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DOI: 10.52549/ijeei.v8i3.1609
Environmental, energy security and electricity demand concerns stimulate solar-grid integration. However, intermittent, non-dispatchable PV characteristics may challenge passive grid operation. This paper contains the comprehensive planning and assessment of a 2 MWp CdTe-based PV system deployment proposed for hybrid operation in an isolated 11 kV 10-bus microgrid in Brunei. The presented approach combinedly assesses PV system performance and scenario-based interconnection impacts based on a detailed PV system model considering deployment conditions. Various interconnection points with multiple sets of feeder-specific measured load profiles are examined. Results show the PV system designed for maximum annual generation achieves performance ratio of 90.6%. While time-series power flow assessment reveals grid operation enhancement, there are concerns at times of generation-demand mismatch requiring proper genset sequencing and reactive power management. Meanwhile, faster relay operating time and reverse fault current are demonstrated in existing protection scheme. Dynamic grid stabilities are preserved in various generation intermittency and loss events, including the most challenging condition of further inertia and spinning reserve reduction reaching a frequency of 96.02%. Finally, optimal interconnection point fulfilling multi-objectives on losses, voltage profile and line reserve capacity is identified. The findings indicate a good prospect of the synergy for advancing energy transition. The analysis could facilitate RE planning and policymaking.
A New Topology of a Single-Phase Five-Level Inverter
Leonardus Heru Pratomo
Indonesian Journal of Electrical Engineering and Informatics (IJEEI) Vol 8, No 3: September 2020
Publisher : IAES Indonesian Section
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DOI: 10.52549/ijeei.v8i3.1766
The power inverter technology with low harmonics content is used for many applications, such as in new and renewable energy sector. In the last decades, some researchers explored its inverter to minimize the harmonics content, and one of the solutions is a five-level inverter. A single-phase five-level inverter has a good performance in power conversion and improved performance. Nevertheless, the conventional five-level inverter topology always deals with many power semiconductor switches and a complex control algorithm. This paper, therefore, presents a new topology of a five-level inverter using four active switches.The new topology can work well as a single phase-five-level inverter with a novel Sinusoidal Pulse Width Modulation (SPWM) control algorithm using level-phase shifted carrier strategy. The new inverter has a simple power circuit and control strategy. The verification of this research is a simulation and prototype implementation, carried out in a laboratory. The results show that the proposed control strategy is capable of achieving five-level with a simple control strategy.