Catherine Algani
Gustave Eiffel University

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A 5G mm-wave compact voltage-controlled oscillator in 0.25 µm pHEMT technology Abdelhafid Es-saqy; Maryam Abata; Mahmoud Mehdi; Mohammed Fattah; Said Mazer; Moulhime El Bekkali; Catherine Algani
International Journal of Electrical and Computer Engineering (IJECE) Vol 11, No 2: April 2021
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.11591/ijece.v11i2.pp1036-1042

Abstract

A 5G mm-wave monolithic microwave integrated circuit (MMIC) voltage-controlled oscillator (VCO) is presented in this paper. It is designed on GaAs substrate and with 0.25 µm-pHEMT technology from UMS foundry and it is based on pHEMT varactors in order to achieve a very small chip size. A 0dBm-output power over the entire tuning range from 27.67 GHz to 28.91 GHz, a phase noise of -96.274 dBc/Hz and -116.24 dBc/Hz at 1 and 10 MHz offset frequency from the carrier respectively are obtained on simulation. A power consumption of 111 mW is obtained for a chip size of 0.268 mm2. According to our knowledge, this circuit occupies the smallest surface area compared to pHEMTs oscillators published in the literature.
Gilbert cell down-conversion mixer for THz wireless communication with passive baluns Abdeladim El Krouk; Abdelhafid Es-saqy; Mohammed Fattah; Said Mazer; Mahmoud Mehdi; Moulhime El Bekkali; Catherine Algani
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 22, No 6: December 2024
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v22i6.25682

Abstract

This article presents the design of an active down-conversion mixer for the superheterodyne receiver system for 6G wireless communications. This mixer is developed based on the Gilbert cell in the terahertz frequency band, using the PH15 transistor from United Monolithic Semiconductors (UMS) Foundry in monolithic microwave integrated circuit (MMIC) technology. We used the charge injection method to increase our mixer’s conversion gain. In addition, we integrated a buffer stage at the mixer outputs to facilitate impedance matching and improve linearity. The power dividers used in this chapter are based on transmission lines from Agilent's advanced design system (ADS) tool, connected to the input and output ports of the circuit. The proposed architecture offers a high conversion gain of 15.2 dB, with a low local oscillator (LO) power of 0 dBm, a low double sideband (DSB) noise figure (NF) of around 7.1 dB, a 1\ dB compression point of -16 dBm, and good radio frequency (RF)-LO port isolation of 63.2 dB, at a RF of 0.14 THz.