Article Per Year (5 Year)
p-Index From 2021 - 2026
0
P-Index
This Author published in this journals
All Journal International Journal of Electrical and Computer Engineering TELKOMNIKA (Telecommunication Computing Electronics and Control)
Yasir Hashim
Ishik University
Computer Science & IT Electrical & Electronics Engineering

Published : 3 Documents Claim Missing Document
Claim Missing Document
Check
Articles

Found 1 Documents
Search
Journal : International Journal of Electrical and Computer Engineering

 1 
Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor Ahmed Mahmood; Waheb A. Jabbar; Yasir Hashim; Hadi Bin Manap
International Journal of Electrical and Computer Engineering (IJECE) Vol 9, No 4: August 2019
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (781.718 KB) | DOI: 10.11591/ijece.v9i4.pp2902-2909

Abstract

In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to simulate and compare the considered characteristics based on variable channel dimensions: length, width and oxide thickness. The results demonstrate that the best performance of InAs- FinFET was achieved with channel length = 25 nm, width= 5 nm, and oxide thickness between 1.5 to 2.5 nm according to the selected scaling factor (K = 0.125).
Co-Authors Abdul Nasir Abd Ghafar Ahmed Mahmood Hadi Bin Manap Hani Taha Al Ariqi Waheb A. Jabbar Waheb A. Jabbar Yousif Atalla