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All Journal International Journal of Reconfigurable and Embedded Systems (IJRES)
Benjamin Iñiguez
Universitat Rovira i Virgili
Economics, Econometrics & Finance

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Surface potential modeling of dual metal gate-graded channel-dual oxide thickness with two dielectric constant different of surrounding gate MOSFET Hind Jaafar; Abdellah Aouaj; A. Bouziane; Benjamin Iñiguez
International Journal of Reconfigurable and Embedded Systems (IJRES) Vol 9, No 1: March 2020
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (502.872 KB) | DOI: 10.11591/ijres.v9.i1.pp52-60

Abstract

An Analytical study for the surface potential, threshold voltage and Subthreshold swing (SS) of Dual-metal Gate Graded channel and Dual Oxide Thickness with two dielectric constant different cylindrical gate surrounding-gate (DMG-GC-DOTTDCD) metal–oxide–semiconductor field-effect transistors (MOSFETs) is proposed to investigate short-channel effects (SCEs). The performance of the modified structure was studied by developing physics-based analytical models for the surface potential, threshold voltage shift, and Subthreshold swing. It is shown that the novel MOSFET could significantly reduce threshold voltage shift and Subthreshold swing, can also provides improved electron transport and reduced short channel effects (SCE). Results reveal that the DMG-GC-DOTTDCD devices with different dielectric constant offer superior characteristics as compared to DMG-GC-DOT devices. The derived analytical models agree well with simulation by ATLAS.
A compact model of transconductance and drain conductance for DMG-GC-DOT cylindrical gate MOSFET Hind Jaafar; Abdellah Aouaj; Benjamin Iñiguez; Ahmed Bouziane
International Journal of Reconfigurable and Embedded Systems (IJRES) Vol 9, No 1: March 2020
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (432.238 KB) | DOI: 10.11591/ijres.v9.i1.pp34-41

Abstract

A compact model for dual-material gate graded-channel and dual-oxide thickness with two dielectric constant different cylindrical gate (DMG-GC-DOTTDCD) MOSFET was investigated in terms of transconductance, drain conductance and capacitance. Short channel effects are modeled with simple expressions, and incorporated into the core of the model (at the drain current). The design effectiveness of DMG-GC-DOTTDCD was monitored in comparing with the DMG-GC-DOT transistor, the effect of variations of technology parameters, was presented in terms of gate polarization and drain polarization. The results indicate that the DMG-GC-DOTTDCD devices have characteristics higher than the DMG-GC-DOT MOSFET. To validate the proposed model, we used the results obtained from the simulation of the device with the SILVACO-ATLAS-TCAD software.
Co-Authors A. Bouziane Abdellah Aouaj Abdellah Aouaj Ahmed Bouziane Hind Jaafar Hind Jaafar