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Fabrication of pbs films for air mass filter of solar simulator Hilmi, Isom; Kusuma, Damar Yoga; Soetedjo, Hariyadi; Hidayah, Qonitatul; Salamah, Umi
Jurnal Teknosains Vol 13, No 2 (2024): June
Publisher : Universitas Gadjah Mada

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.22146/teknosains.88846

Abstract

The production of solar panels is continuously increasing due to increasing demands at industrial and residential levels. This also leads to an increasing demand for solar simulator testing tools. A solar simulator is a tool to assess a solar panel's performance in lab and industry scales. One of the main components of the solar simulator is the Air Mass Filter (AMF). The primary function of AMF is to remove unwanted wave bands from the solar simulator light source (e.g., Xe arc lamp) so that the filtered spectrum is commensurate to that of solar irradiation. An AMF can be produced by fabricating a thin material layer on a transparent substrate like glass. The film would absorb certain wave bands in different ways. This paper reports the fabrication of the chalcogenide PbS thin films for applying AMF. The thermal evaporation technique is used for the film fabrication. PbS is known for its versatility for applications in different optical devices due to its tailorable optical properties. Different amounts (in grams) of PbS source powders are used to deposit the PbS thin films. The optical properties of the films are then examined using UV-Vis spectroscopy. The distributions of the transmittance intensity of the Xe-arc-lamp light with and without the use of the films as an optical filter are then examined using a solar simulator. From the experiments, the film deposited using a 0.012 g PbS powder source is regarded as the optimum one regarding the transmittance intensity distribution.
Influence of annealing on the physical and optical properties of Ge thin films deposited using thermal evaporation Hilmi, Isom; Adam, Muhammad Kevin; Purwadi, Joko; Soesanto, Qidir Maulana Binu; Kusuma, Damar Yoga
Journal of Physics and Its Applications Vol 7, No 2 (2025): May 2025
Publisher : Diponegoro University Semarang Indonesia

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.14710/jpa.v7i2.24517

Abstract

Germanium (Ge) is extensively utilized in various technological applications, particularly in optoelectronic devices due to its favorable electronic properties. In this study, Ge thin films were deposited onto soda-lime glass substrates using the thermal evaporation technique. The deposited films were subsequently subjected to annealing at temperatures ranging from 200 to 700 °C. Comprehensive characterization of the films was performed using XRD to analyze crystallinity, UV-Vis spectroscopy to evaluate optical properties, and SEM to investigate surface topography. The annealing process induced a significant phase transformation from an amorphous state to a co-existing Ge and GeO2 structures, as evidenced by XRD measurements. This structural evolution was accompanied by notable changes in the optical properties of the films. Specifically, an increase in annealing temperature resulted in a higher absorbance in the longer wavelength regions of the UV-Vis spectrum. These findings highlight the possibility of a controlled manipulation on the structural and optical characteristics of Ge thin films by thermal treatment, with potential applications in optoelectronic devices.