Marianty, Dewi
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Journal : Makara Journal of Science

STUDI KARAKTERISASI OPTIS LAPISAN TIPIS a-SiC:H HASIL DEPOSISI METODE GLOWDISCHARGE Saleh, Rosari; Munisa, Lusitra; Marianty, Dewi
Makara Journal of Science Vol. 7, No. 3
Publisher : UI Scholars Hub

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Optical Properties of a-SiC:H Films Deposited by Glowdischarge Methods. The optical properties of amorphous silicon carbon films deposited by glowdischarge method have been studied using ultra violet-visible (uv-vis) spectroscopy. The refractive index was calculated by Swanepoel’s formula using transmission data then followed by numerical simulation. The films density tends to decrease with increasing carbon content. The widening of the optical gap by increasing carbon content indicates the enhancement of film’s transparence. Both real and imaginary parts of the dielectric constant show variation in magnitude as the carbon content increase
PENGARUH ANIL TERMAL TERHADAP BESARAN OPTIS LAPISAN TIPIS a-SiC:H HASIL METODE DC SPUTTERING II. TARGET GRAFIT Saleh, Rosari; Munisa, Lusitra; Marianty, Dewi
Makara Journal of Science Vol. 7, No. 1
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The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I. Graphite Target Case. A study of the annealing effect on optical properties and disorder of hydrogenated amorphous silicon carbon (a-SiC:H) films was undertaken. The films were prepared by sputtering technique using graphite target and silicon wafer in argon and hydrogen gas mixture, and then characterized by uv-vis (ultra violet-visible) spectroscopy before and after annealing. Index of refraction n and absorption coefficient α of films have been determined from measurements of transmittance. The optical gap show small variation with annealing temperature, increasing with increasing annealing temperature up to 500 °C. An increase of annealing temperature leads to reduced film density and the amorphous network disorder. The experimental results are discussed in terms of deposition condition and compared to other experimental results.
PENGARUH ANIL TERMAL TERHADAP BESARAN OPTIS LAPISAN TIPIS a-SiC:H HASIL METODE DC SPUTTERING I. TARGET SILIKON Saleh, Rosari; Munisa, Lusitra; Marianty, Dewi
Makara Journal of Science Vol. 7, No. 1
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The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I. Silicon Target Case. The effects of thermal annealing treatment on the optical properties of amorphous silicon carbon films deposited by silicon target in an argon, methane and hydrogen gas mixture have been studied using ultra violet-visible (uv-vis) spectroscopy. Both n and α, and consequently the real and imaginary parts of the dielectric constant, show a considerable variation with subsequent annealing up to annealing temperature 500 °C, with the most rapid changes occurring for temperature 300 °C. The films tend denser as the annealing temperature increased up to 500 °C. The optical gap improved slightly upon annealing, where as the disorder of the amorphous network reduced. The annealing treatment produces reorganization of the amorphous network since thermal annealing results in dissociation of hydrogenated bonds (Si-H and C-H).
PENENTUAN KONSTANTA OPTIS DI DAERAH ABSORPSI FUNDAMENTAL MENGGUNAKAN FORMULASI FOROUHI DAN BLOOMER UNTUK LAPISAN TIPIS AMORF SILIKON KARBON (a-SiC:H) Saleh, Rosari; Munisa, Lusitra; Marianty, Dewi
Makara Journal of Science Vol. 6, No. 2
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An expression of the imaginary and real parts of the complex refractive index derived by Forouhi and Bloomer have been applied to obtain wider energy range of optical constants for amorphous silicon carbon (a-SiC:H) films deposited by dc sputtering method using silicon and graphite targets. Excellent agreement was obtained between the formula and experimentally measured values of both n(E) and k(E). The optical constants obey Kramers-Kronig dispersion relation and show a maximum at high-energy range. The dependence of five parameters to carbon concentration and the variation of optical constants with composition for both targets will be discussed.