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All Journal International Journal of Electrical and Computer Engineering TELKOMNIKA (Telecommunication Computing Electronics and Control)
Waheb A. Jabbar
Universiti Malaysia Pahang
Computer Science & IT Electrical & Electronics Engineering

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Modeling and analysis of IEEE 1609.4 MAC in the presence of error-prone channels Akram A. Almohammedi; Nor K. Noordin; A. Sali; Fazirulhisyam Hashim; Waheb A. Jabbar; Sabri Saeed
International Journal of Electrical and Computer Engineering (IJECE) Vol 9, No 5: October 2019
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (1148.826 KB) | DOI: 10.11591/ijece.v9i5.pp3531-3541

Abstract

Vehicular Ad Hoc Networks (VANETs) have been developed to improve the safety, comfort and efficiency of driving on the road. The IEEE 1609.4 is a standard intended to support multi-channel in VANETs. These channels include one control channel for safety applications and six service channels for service applications. However, there is still no comprehensive analysis for the average delay and system throughput of IEEE 1609.4 MAC in VANETs considering error-prone channel under non-saturated conditions. In this paper, we propose an analytical models based on 1-D and 2-D Markov chain to evaluate the performance analysis of IEEE 1609.4 MAC in the presence of error-prone channels. Besides, freezing of the back-off timer is taken into consideration to provide an accurate estimation of access to the channel. The simulation results have been carried out to validate the analytical results of our model. The results show that the performance of our model outperforms the existing model in terms of packet delivery ratio and average delay of safety packets over CCH, and system throughput of service packets over SCHs.
Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor Ahmed Mahmood; Waheb A. Jabbar; Yasir Hashim; Hadi Bin Manap
International Journal of Electrical and Computer Engineering (IJECE) Vol 9, No 4: August 2019
Publisher : Institute of Advanced Engineering and Science

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (781.718 KB) | DOI: 10.11591/ijece.v9i4.pp2902-2909

Abstract

In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to simulate and compare the considered characteristics based on variable channel dimensions: length, width and oxide thickness. The results demonstrate that the best performance of InAs- FinFET was achieved with channel length = 25 nm, width= 5 nm, and oxide thickness between 1.5 to 2.5 nm according to the selected scaling factor (K = 0.125).
Characterization of silicon nanowire transistor Hani Taha Al Ariqi; Waheb A. Jabbar; Yasir Hashim; Hadi Bin Manap
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 17, No 6: December 2019
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v17i6.13084

Abstract

This paper analyses the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the diameter (D.ch) of channel. In addition, it also investigates the possibility of utilizing SiNWT as a Nano- temperature sensor. The MuGFET simulation tool has been utilized to conduct a comprehensive simulation to evaluate both electrical and temperature characteristics of SiNWT. Current-voltage characteristics with different values of temperature and with a varying diameter of the Nano wire channel (D.ch = 80, 40, 20 and 10 nm), were simulated. Diode operating mode connection of the transistor is suggested for measuring the temperature sensitivity of SiNWT. As simulation results demonstrated, the best temperature sensitivity was occurred at lower temperature with increasing the channel diameter. We also illustrate the impact of varying temperature and channel diameter on electrical characteristics of SiNWT including, Subthreshold Swing (SS), Threshold voltage (V.th), and Drain-induced barrier lowering (DIBL), which were proportionally increased with the operating temperature.
Co-Authors A. Sali Ahmed Mahmood Akram A. Almohammedi Fazirulhisyam Hashim Hadi Bin Manap Hani Taha Al Ariqi Nor K. Noordin Sabri Saeed Yasir Hashim