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Indonesian Journal of Physics (IJP)

ijp
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Published by Institut Teknologi Bandung

ISSN : 23018151 EISSN : 29870828 DOI : https://doi.org/10.5614/itb.ijp

Core Subject : Science, Engineering,

Astronomy Computer Science & IT Earth & Planetary Sciences Electrical & Electronics Engineering Energy Engineering

Indonesian Journal of Physics welcomes full research articles in the area of Sciences and Engineering from the following subject areas: Physics, Mathematics, Astronomy, Mechanical Engineering, Civil and Structural Engineering, Chemical Engineering, Electrical Engineering, Geotechnical Engineering, Engineering Science, Environmental Science, Materials Science, and Earth-Surface Processes. Authors are invited to submit articles that have not been published previously and are not under consideration elsewhere.

Arjuna Subject : Fisika dan Astronomi - Fisika Nuklir dan Molekuler, dan Ooptik

Articles 334 Documents

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Electrical Conductivity and Surface Roughness Properties of Ferroelectric Gallium Doped Ba0,5Sr0,5TiO3 (BGST) Thin Films Irzaman Irzaman; A. Marwan; A. Arief; R.A. Hamdani; M. Komaro
Indonesian Journal of Physics Vol 19 No 4 (2008): Vol. 19 No. 4, October 2008
Publisher : Institut Teknologi Bandung

Ba0.5Sr0.5TiO3 (BST) and gallium doped BST (BGST) thin films were successfully deposited on p-type Si(100) substrates. The thin films were fabricated by the chemical solution deposition (CSD) and spin coating method, with 1.00 M precursor and spinning speed of 3000 rpm for 30 seconds. The post deposition annealing of the 9 films were carried out BST without gallium (BGST 0%) annealing 850OC, BGST 0% annealing 900OC, BGST 0% annealing 950oC, BGST 5% annealing 850oC, BGST 5% annealing 900oC, BGST 5% annealing 950oC, BGST 10% annealing 850oC, BGST 10% annealing 900oC, BGST 10% annealing 950oC for 15 hour in oxygen gas atmosphere, respectively. The resistance and electrical conductivity of the grown thin films are characterized by I-V converter, meanwhile surface roughness of the grown thin films are characterized by atomic force microscopy (AFM) method. The electrical conductivity of the grown thin films BGST due to semiconductor. The results show that resistance and electrical conductivity of the thin film have strong correlation to the annealing temperature, concentration dopant and surface roughness.

Interdiffusion of InxGa1-xAs/InP Quantum Well Structures Induced by Proton Implantation Paulus L. Gareso
Indonesian Journal of Physics Vol 20 No 1 (2009): Vol. 20 No. 1, January 2009
Publisher : Institut Teknologi Bandung

We have investigated the atomic intermixing of InxGa1-xAs/InP quantum well structures induced by proton implantation using photoluminescence. Photoluminescence results showed that energy shift was systematically increased as doses increased. As the dose further increased, Saturation in energy shift was observed. At elevated temperature irradiation revealed that the magnitude of the energy shift decreased as the irradiation increased followed by a broadening of the PL linewidth and reduction of the PL intensity. This indicated that dynamic annealing and mobility of the defects play an important role in the type and concentration of residual defects.

An Application of the General Relativity-type Inversion Formulae: the Derivation of the Fock-Schwinger-Friedmann-Robertson-Walker Christoffel Symbol Triyanta Triyanta
Indonesian Journal of Physics Vol 20 No 1 (2009): Vol. 20 No. 1, January 2009
Publisher : Institut Teknologi Bandung

Similar relationship between Christoffel symbols and Riemann tensors and between gauge potentials and gauge field strengths enable us to treat the Christoffel symbols just like the gauge fields. Restricting the Christoffel symbol by the Fock-Schwinger (FS) condition one obtains the so-call inversion formulae in general relativity theory. These formulae may be utilized for various applications, including the Christoffel symbol-free formulation of the general relativity and calculating the so-called Fock-Schwinger Christoffel symbols for certain Riemann tensors. Here we will derive the Fock-Schwinger-Friedmann-Robertson-Walker (FSFRW) Christoffel symbols.

Anneal Temperature Effect on Crystallite Size and Electric Conductivity of LiMn2O4 Khairul Basar; Xianglian Xianglian; Sainer Siagian; Kouta Ohara; Takashi Sakuma; Haruyuki Takahashi; Osami Abe; Naoki Igawa; Yoshinobu Ishii
Indonesian Journal of Physics Vol 20 No 1 (2009): Vol. 20 No. 1, January 2009
Publisher : Institut Teknologi Bandung

Powder samples of LiMn2O4 have been prepared by solid state reaction of LiOH and MnO2. Neutron scattering experiments at room temperature and conductivity measurement have been performed on the samples. Anneal temperature effect on the crystallite size and electric conductivity of LiMn2O4 is analyzed. The average crystallite size is obtained from the full width at half maximum (FWHM) of Bragg lines using Scherrer equation. The average crystallite size increases with the increase of anneal temperature. Activation energy and conductivity prefactor increase with anneal temperature.

Feasibility Design Study of Long Life BWR with Natural Uranium/Thorium as Fuel Cycle Input Zaki Su'ud; Rijal Kurniadi; Rida SNM; Zuhair Zuhair
Indonesian Journal of Physics Vol 20 No 1 (2009): Vol. 20 No. 1, January 2009
Publisher : Institut Teknologi Bandung

Feasibility design study of Long Life BWR with natural uranium/thorium as fuel cycle input has been performed. The reactor core is divided into 6 equal regions in radial direction. The fresh fuel is first loaded into the most outer region then shifted to the center of the core, and from there shifted to the nearby region in the outward direction. Nitride fuel is employed in the core to get better criticality and conversion/breeding ratio. The results show that uranium fuel combined with low moderating ratio environment is superior to make the system critical.

Damped Zigzag Upward Motion of a Ball in Fluid: a Numerical Model Muhammad Nur Tajuddin; Novitrianc Novitrianc; Sparisoma Viridi; Euis Sustini; Veinardi Suendo
Indonesian Journal of Physics Vol 20 No 1 (2009): Vol. 20 No. 1, January 2009
Publisher : Institut Teknologi Bandung

Several types of upward motion of a ball in a cylinder filled with water are observed in experiment such as straight, damped zigzag, and zigzag upward motion. Center of mass of the balls and the way the balls are released play important role to determine the type of occuring upward motion. A simple theoretical model regarding only gravitational force, Stokes drag force, and Archimedes bouyancy force, where the work points of these forces are not coincident, are developed and used to explain the damped zigzag motion.

A Comparison of Zinc and Carbon Doped on the Atomic Interdiffusion of InGaAs/AlGaAs Quantum Wells Laser Structures After Annealing Paulus L. Gareso
Indonesian Journal of Physics Vol 20 No 2 (2009): Vol. 20 No. 2, April 2009
Publisher : Institut Teknologi Bandung

We have compared a zinc and a carbon doped on the atomic interdiffusion of InGaAs/AlGaAs after annealing using Electrochemical capacitance voltage (EC-V), X-ray diffraction and photoluminescence (PL) measurements. Electrochemical capacitance voltage measurements revealed that the carrier concentration in the Zn-doped p++GaAs contact layers decreased after annealing at 900oC for 60 sec, indicating that some of the Zn acceptors were passivated or outdiffused from the surface. In contrast to the C-doped samples, an increase of carrier concentration was observed after annealing. X-ray rocking curve confirmed this result where the amount of lattice contraction increase after annealing which is attributed to the presence of the substitutional carbon CAs. Photoluminescence results showed that a large energy shift was observed in the Zn-doped samples compare with C- doped samples. Photoluminescence measurements after etching to various depth showed similar luminescence defects in both Zn- and C-doped samples. Photocurrent measurements showed the quality of quantum well was improve after annealing in C-doped samples due to activation of carbon doped.

Simulation of Electron Transmittance and Tunneling Current in a Metal-Oxide- Semiconductor Capacitor with a High-K Dielectric Stack of HfO2 and SiO2 Using Exponential- and Airy-Wavefunction Approaches and a Transfer Matrix Method Khairurrijal Khairurrijal; Fatimah A. Noor; Mikrajuddin Abdullah; Sukirno Sukirno
Indonesian Journal of Physics Vol 20 No 2 (2009): Vol. 20 No. 2, April 2009
Publisher : Institut Teknologi Bandung

Analytical expressions of electron transmittance and tunneling current in a metal-oxide-semiconductor (MOS) capacitor with a high dielectric constant (high-K) oxide stack of HfO2 and SiO2 and a negative bias applied to the metal gate were derived. Exponential- and Airy-wavefunction approaches were employed in deriving analytically the electron transmittance and tunneling current. A numerical approach based on a transfer matrix method was used as a standard to evaluate the analytical approaches. It was found that the transmittances obtained under the exponential- and Airy-wavefunction approaches and the TMM are matching for low electron energies, while for higher energies only the transmittances calculated by employing the Airy- wavefunction approach is the same as those computed by using the TMM. It was also found that the tunneling currents calculated by using the exponential- and the Airy-wavefunction approaches and the TMM are equal for low oxide voltages (lower than 0.5 V), while for higher oxide voltages only the tunneling currents computed under the Airy-wavefunction approach fit those obtained under the TMM. Therefore, the Airy-wavefunction approach provides a better analytical model to tunneling processes in the MOS capacitor.

Fission Yield Calculation Method and its Effect in Nuclear Fuel Cell Homogenization Calculation Zaki Su’ud; M. Ali Shafii; Rida SNM
Indonesian Journal of Physics Vol 20 No 2 (2009): Vol. 20 No. 2, April 2009
Publisher : Institut Teknologi Bandung

Zero burn-up core capability can eliminate possible super prompt critical accident and make possible of inherent safety feature based on reactivity feedback mechanism. In this concept the maximum excess reactivity is limited below 1 $ of reactivity so that possibility of super prompt accident such as in Chernobyl accident case can be eleminated. This is however need high quality of system analysis, and in this study the effect of fission yield calculation method on the nuclear fuel cell homogenization process is investigated and discussed. This study use SRAC code system to investigate the efect of reactor dependent fission yield distribution calculation. Calculation restults show that this process will has important improvement effect for long life high burnup core.

A Simple Method for Determining Surface Porosity Based on SEM Images Using OriginPro Software Mikrajuddin Abdullah; Khairurrijal Khairurrijal
Indonesian Journal of Physics Vol 20 No 2 (2009): Vol. 20 No. 2, April 2009
Publisher : Institut Teknologi Bandung

We proposed a simple method for predicting surface porosity of materials based on scanning electron micrograph (SEM) images. The porosity was determined by calculating volume beneath the surface and volume beneath a flat surface, the height of which is equal to maximum height of any point on the sample’s surface. The SEM image was firstly converted into two-dimensional matrix of gray scale and all procedures were performed using instructions provided by OriginPro software. The predicted results were in good agreements with direct calculation and measurement of the samples porosities.

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Asril Pramutadi Andi Mustari

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IJPhysicsITB@gmail.com

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+6222-2500834

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ijp-journal@itb.ac.id

Editorial Address
Prodi Sarjana dan Pascasarjana Fisika Fakultas Matematika dan Ilmu Pengetahuan Alam Institut Teknologi Bandung Gedung Fisika, Jalan Ganesa 10, Bandung 40132, INDONESIA

Location
Kota bandung,

Jawa barat

INDONESIA

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Home Page

OAI Link

Editorial Team

Contact

Reviewer

Google Scholar

Contact Name Asril Pramutadi Andi Mustari

Contact Email IJPhysicsITB@gmail.com

Phone +6222-2500834

Journal Mail Official ijp-journal@itb.ac.id

Editorial Address Prodi Sarjana dan Pascasarjana Fisika Fakultas Matematika dan Ilmu Pengetahuan Alam Institut Teknologi Bandung Gedung Fisika, Jalan Ganesa 10, Bandung 40132, INDONESIA

Location Kota bandung, Jawa barat INDONESIA

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Abstract

Contact Name
Asril Pramutadi Andi Mustari

Contact Email
IJPhysicsITB@gmail.com

Phone
+6222-2500834

Journal Mail Official
ijp-journal@itb.ac.id

Editorial Address
Prodi Sarjana dan Pascasarjana Fisika Fakultas Matematika dan Ilmu Pengetahuan Alam Institut Teknologi Bandung Gedung Fisika, Jalan Ganesa 10, Bandung 40132, INDONESIA

Location
Kota bandung,

Jawa barat

INDONESIA